Results 171 to 180 of about 1,346 (191)
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Neobit/sup /spl reg// - high reliable logic non-volatile memory (NVM)
Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743), 2004In this paper, a new embedded OTP bit-cell (Neobit) is presented for one-/multiple-time programming (OTP/MTP) application, which is fabricated by using a generic logic process. Without additional processing or extra fabrication cost, this single-poly NVM can be implemented in various CMOS technologies such as logic, mixed-mode, analog, RF, HV and etc ...
R.S.C. Wang, R.S.J. Shen, C.C.H. Hsu
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International Journal of High Speed Electronics and Systems, 2020
This paper presents the theory, fabrication and experimental testing results for a multiple state Non-Volatile Memory (NVM), comprised of hafnium oxide high-k dielectric tunnel and gate barriers as well as a Silicon Quantum Dot Superlattice (QDSL) implemented for the floating gate and inversion channel (QDG) and (QDC) respectively. With the conclusion
N. R. Butterfield +4 more
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This paper presents the theory, fabrication and experimental testing results for a multiple state Non-Volatile Memory (NVM), comprised of hafnium oxide high-k dielectric tunnel and gate barriers as well as a Silicon Quantum Dot Superlattice (QDSL) implemented for the floating gate and inversion channel (QDG) and (QDC) respectively. With the conclusion
N. R. Butterfield +4 more
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AIP Conference Proceedings, 2011
Using PH3 N‐type plasma doing (PLAD), the device characteristics of high performance vertical switch diode for 50 nm phase‐change NVM have been studied. Compared to the conventional beam line ion implantation, there are improvements of diode breakdown voltage (B.V.) and isolation B.V., respectively 20% and 41% by N‐type PLAD doping due to the higher ...
Min Yong Lee +11 more
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Using PH3 N‐type plasma doing (PLAD), the device characteristics of high performance vertical switch diode for 50 nm phase‐change NVM have been studied. Compared to the conventional beam line ion implantation, there are improvements of diode breakdown voltage (B.V.) and isolation B.V., respectively 20% and 41% by N‐type PLAD doping due to the higher ...
Min Yong Lee +11 more
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Fuzzy NVM memory with non-volatility management
2021Dubeyko, Vyacheslav +1 more
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Non-Volatile memory (NVM) technologies
Journal of Systems Architecture, 2016Zili Shao, Yuan-Hao Chang 0001
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2023 International Conference on Computer, Electronics & Electrical Engineering & their Applications (IC2E3), 2023
Khanjan Miteshkumar Joshi +5 more
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Khanjan Miteshkumar Joshi +5 more
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Twizzler: A Data-centric OS for Non-volatile Memory
ACM Transactions on Storage, 2021Peter Alvaro +2 more
exaly
WDBT: Non-volatile memory wear characterization and mitigation for DBT systems
Journal of Systems and Software, 2022Jian Dong, Wen Zhang
exaly
基于NVM的存储安全综述 (Survey on Storage Security of Emerging Non-volatile Memory).
计算机科学, 2018Yue Li, Fang Wang
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