Results 171 to 180 of about 1,341 (191)

Logic Non-Volatile Memory

2013
Semiconductor Device Physics for the Non-Volatile Memory (NVM) Transistor Structures, Physics, and Operations - Described for the One Time Programmable (OTP), Multiple Times Programmable (MTP), Flash Memory, and Electrical Erasable Programmable Read Only Memory (EEPROM) The Basic Building Block Circuits to Read Out, Program, and Erase the Memory Cells,
Charles Ching-Hsiang Hsu, Yuan-Tai Lin, Evans Ching-Song Yang, Rick Shih-Jye Shen   +3 more
openaire   +1 more source

Neobit/sup /spl reg// - high reliable logic non-volatile memory (NVM)

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743), 2004
In this paper, a new embedded OTP bit-cell (Neobit) is presented for one-/multiple-time programming (OTP/MTP) application, which is fabricated by using a generic logic process. Without additional processing or extra fabrication cost, this single-poly NVM can be implemented in various CMOS technologies such as logic, mixed-mode, analog, RF, HV and etc ...
R.S.C. Wang, R.S.J. Shen, C.C.H. Hsu
openaire   +1 more source

Quantum Dot Gate (QDG) Quantum Dot Channel (QDC) Multistate Logic Non-Volatile Memory (NVM) with High-K Dielectric HfO₂ Barriers

International Journal of High Speed Electronics and Systems, 2020
This paper presents the theory, fabrication and experimental testing results for a multiple state Non-Volatile Memory (NVM), comprised of hafnium oxide high-k dielectric tunnel and gate barriers as well as a Silicon Quantum Dot Superlattice (QDSL) implemented for the floating gate and inversion channel (QDG) and (QDC) respectively. With the conclusion
N. R. Butterfield, R. Mays, B. Khan, R. Gudlavalleti, F. C. Jain   +4 more
openaire   +1 more source

Improvement of Vertical Diode Properties by N-type Plasma Doping for Low-Power Phase Change Non-Volatile Memory (NVM)

AIP Conference Proceedings, 2011
Using PH3 N‐type plasma doing (PLAD), the device characteristics of high performance vertical switch diode for 50 nm phase‐change NVM have been studied. Compared to the conventional beam line ion implantation, there are improvements of diode breakdown voltage (B.V.) and isolation B.V., respectively 20% and 41% by N‐type PLAD doping due to the higher ...
Min Yong Lee, H. S. Lee, Y. J. Ki, Y. S. Sohn, H. S. Kang, C. Y. Oh, J. W. Park, S. H. Jo, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki   +11 more
openaire   +1 more source

Fuzzy NVM memory with non-volatility management

2021
Dubeyko, Vyacheslav, Cargnini, Luis Vitório   +1 more
openaire   +1 more source

Simulation Study on Adhesion Force (F_adh) for Microelectromechanical (MEM)-based Non-Volatile Memory (NVM) Application

2023 International Conference on Computer, Electronics & Electrical Engineering & their Applications (IC2E3), 2023
Khanjan Miteshkumar Joshi, Raj Aryan, Mujeeb Yousuf, Manu Garg, Sushil Kumar, Pushparaj Singh   +5 more
openaire   +1 more source

NVM-ESR: Using Non-Volatile Memory in Exact State Reconstruction of Preconditioned Conjugate Gradient.

CoRR, 2022
Yehonatan Fridman, Yaniv Snir, Harel Levin, Danny Hendler, Hagit Attiya, Gal Oren 0001   +5 more
openaire   +1 more source

Twizzler: A Data-centric OS for Non-volatile Memory

ACM Transactions on Storage, 2021
Daniel Bittman, Peter Alvaro, Darrell D E Long   +2 more
exaly  

WDBT: Non-volatile memory wear characterization and mitigation for DBT systems

Journal of Systems and Software, 2022
Jian Dong, Wen Zhang
exaly  

A Survey of Software Techniques for Using Non-Volatile Memories for Storage and Main Memory Systems

IEEE Transactions on Parallel and Distributed Systems, 2016
Sparsh Mittal, Jeffrey S Vetter
exaly