Results 151 to 160 of about 12,434,327 (206)

Ferroelectric Transistors: from Materials Innovation to Intelligent Electronic Systems. [PDF]

open access: yesAdv Mater
Li E   +11 more
europepmc   +1 more source

Crafting Non-Volatile Memory (NVM) Hierarchies: Optimizing Performance, Reliability, and Energy Efficiency

open access: yes
Escuín Blasco, Carlos   +2 more
openaire   +1 more source
Some of the next articles are maybe not open access.

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NVM Streaker: A Fast and Reconfigurable Performance Simulator for Non-Volatile Memory-Based Memory Architecture

Journal of Supercomputing, 2018
The high density, low power consumption non-volatile memory (NVM) provides a promising DRAM alternative for the in-memory big-data processing applications, e.g., Spark, It is significant to simulate the behaviors when NVMs are deployed into the area of big-data processing before their widespread use in market.
Fang Lu, Hui-Min Cui, Xiao-Bing Feng
exaly   +3 more sources

A Review of Emerging Non-Volatile Memory (NVM) Technologies and Applications

Solid-State Electronics, 2016
Abstract This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory.
exaly   +2 more sources

RC-NVM: Recovery-Aware Reliability-Security Co-Design for Non-Volatile Memories

IEEE Transactions on Dependable and Secure Computing
David Mohaisen   +2 more
exaly   +3 more sources

Triad-NVM

Proceedings of the 46th International Symposium on Computer Architecture, 2019
Non-Volatile Memory is here and provides an attractive fabric for main memory. Unlike DRAM, non-volatile main memory (NVMM) retains data after power loss. This allows memory to host data persistently across crashes and reboots, but opens up opportunities for attackers to snoop and/or tamper with data between boot episodes.
Amro Awad   +4 more
openaire   +2 more sources

Characterization of tunnel oxides for non-volatile memory (NVM) applications

International Semiconductor Device Research Symposium, 2003, 2004
The purpose of this paper is to characterize, to compare different types of tunnel oxides and to determine the impact on the MB (Moving Bit measurement) issues. The measurements and comparison carried out for the following tunnel oxide thickness in the range of 8 to 10 nm is used.
J. Ackaert   +10 more
openaire   +1 more source

Logic Non-Volatile Memory

2013
Semiconductor Device Physics for the Non-Volatile Memory (NVM) Transistor Structures, Physics, and Operations - Described for the One Time Programmable (OTP), Multiple Times Programmable (MTP), Flash Memory, and Electrical Erasable Programmable Read Only Memory (EEPROM) The Basic Building Block Circuits to Read Out, Program, and Erase the Memory Cells,
Charles Ching-Hsiang Hsu   +3 more
openaire   +1 more source

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