Results 161 to 170 of about 11,788,264 (205)
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Proceedings of the 46th International Symposium on Computer Architecture, 2019
Non-Volatile Memory is here and provides an attractive fabric for main memory. Unlike DRAM, non-volatile main memory (NVMM) retains data after power loss. This allows memory to host data persistently across crashes and reboots, but opens up opportunities for attackers to snoop and/or tamper with data between boot episodes.
Amro Awad +4 more
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Non-Volatile Memory is here and provides an attractive fabric for main memory. Unlike DRAM, non-volatile main memory (NVMM) retains data after power loss. This allows memory to host data persistently across crashes and reboots, but opens up opportunities for attackers to snoop and/or tamper with data between boot episodes.
Amro Awad +4 more
openaire +2 more sources
Characterization of tunnel oxides for non-volatile memory (NVM) applications
International Semiconductor Device Research Symposium, 2003, 2004The purpose of this paper is to characterize, to compare different types of tunnel oxides and to determine the impact on the MB (Moving Bit measurement) issues. The measurements and comparison carried out for the following tunnel oxide thickness in the range of 8 to 10 nm is used.
J. Ackaert +10 more
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2013
Semiconductor Device Physics for the Non-Volatile Memory (NVM) Transistor Structures, Physics, and Operations - Described for the One Time Programmable (OTP), Multiple Times Programmable (MTP), Flash Memory, and Electrical Erasable Programmable Read Only Memory (EEPROM) The Basic Building Block Circuits to Read Out, Program, and Erase the Memory Cells,
Charles Ching-Hsiang Hsu +3 more
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Semiconductor Device Physics for the Non-Volatile Memory (NVM) Transistor Structures, Physics, and Operations - Described for the One Time Programmable (OTP), Multiple Times Programmable (MTP), Flash Memory, and Electrical Erasable Programmable Read Only Memory (EEPROM) The Basic Building Block Circuits to Read Out, Program, and Erase the Memory Cells,
Charles Ching-Hsiang Hsu +3 more
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Plasma damage in HIMOS/spl trade/ non-volatile memories (NVM)
2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866), 2004In this paper, for the first time, plasma induced damage (PID) on floating gate based non-volatile memory cells is reported. Since the cells consist of a complex combination of tunnel and gate oxides, combined with a dense frame of metal interconnect, the chance that these cells may be affected by plasma damage is evident.
J. Ackaert +6 more
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Neobit/sup /spl reg// - high reliable logic non-volatile memory (NVM)
Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743), 2004In this paper, a new embedded OTP bit-cell (Neobit) is presented for one-/multiple-time programming (OTP/MTP) application, which is fabricated by using a generic logic process. Without additional processing or extra fabrication cost, this single-poly NVM can be implemented in various CMOS technologies such as logic, mixed-mode, analog, RF, HV and etc ...
R.S.C. Wang, R.S.J. Shen, C.C.H. Hsu
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Fuzzy NVM memory with non-volatility management
2021Dubeyko, Vyacheslav +1 more
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Twizzler: A Data-centric OS for Non-volatile Memory
ACM Transactions on Storage, 2021Peter Alvaro +2 more
exaly
2023 International Conference on Computer, Electronics & Electrical Engineering & their Applications (IC2E3), 2023
Khanjan Miteshkumar Joshi +5 more
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Khanjan Miteshkumar Joshi +5 more
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