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A review of emerging non-volatile memory (NVM) technologies and applications

Solid-State Electronics, 2016
Abstract This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory.
An Chen
openaire   +3 more sources

NVM Streaker: a fast and reconfigurable performance simulator for non-volatile memory-based memory architecture

The Journal of Supercomputing, 2018
The high density, low power consumption non-volatile memory (NVM) provides a promising DRAM alternative for the in-memory big-data processing applications, e.g., Spark, It is significant to simulate the behaviors when NVMs are deployed into the area of big-data processing before their widespread use in market.
Danqi Hu   +6 more
openaire   +3 more sources

Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications

Materials Today Communications, 2023
J. Ajayan   +9 more
openaire   +3 more sources

Non-Volatile memory (NVM) technologies

Journal of Systems Architecture, 2016
Zili Shao, Yuan-Hao Chang 0001
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RC-NVM: Recovery-Aware Reliability-Security Co-Design for Non-Volatile Memories

IEEE Transactions on Dependable and Secure Computing
Kazi Abu Zubair   +3 more
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Triad-NVM

Proceedings of the 46th International Symposium on Computer Architecture, 2019
Non-Volatile Memory is here and provides an attractive fabric for main memory. Unlike DRAM, non-volatile main memory (NVMM) retains data after power loss. This allows memory to host data persistently across crashes and reboots, but opens up opportunities for attackers to snoop and/or tamper with data between boot episodes.
Amro Awad   +4 more
openaire   +1 more source

Characterization of tunnel oxides for non-volatile memory (NVM) applications

International Semiconductor Device Research Symposium, 2003, 2004
The purpose of this paper is to characterize, to compare different types of tunnel oxides and to determine the impact on the MB (Moving Bit measurement) issues. The measurements and comparison carried out for the following tunnel oxide thickness in the range of 8 to 10 nm is used.
J. Ackaert   +10 more
openaire   +1 more source

Plasma damage in HIMOS/spl trade/ non-volatile memories (NVM)

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866), 2004
In this paper, for the first time, plasma induced damage (PID) on floating gate based non-volatile memory cells is reported. Since the cells consist of a complex combination of tunnel and gate oxides, combined with a dense frame of metal interconnect, the chance that these cells may be affected by plasma damage is evident.
J. Ackaert   +6 more
openaire   +1 more source

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