Results 41 to 50 of about 1,341 (191)

Runtime Data Management on Non-Volatile Memory-Based High PerformanceSystems [PDF]

open access: yes, 2021
Byte-addressable non-volatile memories (NVM) have been envisioned as a new tier in computer systems, providing memory-like performance and storage-level capacity and persistence.
WU, KAI
core  

ExTENDS: Efficient Data Placement and Management for Next Generation PCM-Based Storage Systems

open access: yesIEEE Access, 2019
Although flash memory solid state drives (FSSDs) outperform traditional hard disk drives (HDDs), their performance still fails to cope up with the perennial doubling speeds of microprocessors, regardless of the available high bandwidth. To alleviate this
Ronnie Mativenga   +3 more
doaj   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

open access: yesAdvanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song   +10 more
wiley   +1 more source

Exploring the Design Space for Crossbar Arrays Built With Mixed-Ionic-Electronic-Conduction (MIEC) Access Devices

open access: yesIEEE Journal of the Electron Devices Society, 2015
Large-scale 3-D crossbar arrays offer a path to both high-density storage class memory and novel non-Von Neumann computation. However, such arrays require each non-volatile memory (NVM) element to have its own non-linear access device (AD), which must ...
Pritish Narayanan   +7 more
doaj   +1 more source

Efficient DNN Execution on Intermittently-Powered IoT Devices With Depth-First Inference

open access: yesIEEE Access, 2022
Program execution on intermittently powered Internet-of-Things (IoT) devices must ensure forward progress in the presence of frequent power failures. A general solution is intermittent computing, by which the program states are frequently checkpointed to
Mingsong Lv, Enyu Xu
doaj   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

open access: yesAdvanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar   +9 more
wiley   +1 more source

Automatic code conversion for non-volatile memory

open access: yes, 2018
Non-Volatile Memories (NVMs), such as Phase Change Memories (PCMs) and Resistive RAMs (ReRAMs), have been recently proposed as a main memory due to their higher capacity and low leakage power consumption compared to traditional DRAMs. In order to support
Yongjun Park   +7 more
core   +1 more source

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

SMART: A Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory

open access: yesIEEE Access, 2020
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power operation.
Nikhil Rangarajan   +4 more
doaj   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

open access: yesAdvanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison   +4 more
wiley   +1 more source

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