Results 61 to 70 of about 11,788,264 (205)

A Thermally Programmable ECRAM for Neuromorphic Computing

open access: yes, 2022
1
HWANG, HYUNSANG   +2 more
core  

SMART: A Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory

open access: yesIEEE Access, 2020
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power operation.
Nikhil Rangarajan   +4 more
doaj   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

open access: yesAdvanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki   +3 more
wiley   +1 more source

ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES [PDF]

open access: yes, 2012
Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned
Zambelli, Cristian
core  

Impact of analog memory device failure on in-memory computing inference accuracy

open access: yesAPL Machine Learning, 2023
In-memory computing using analog non-volatile memory (NVM) devices can improve the speed and reduce the latency of deep neural network (DNN) inference. It has been recently shown that neuromorphic crossbar arrays, where each weight is implemented using ...
Ning Li   +3 more
doaj   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

open access: yesAdvanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison   +4 more
wiley   +1 more source

Design exploration of emerging nano-scale non-volatile memory

open access: yes, 2014
This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices.  Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic ...
Wang, Yuhao, Yu, Hao
core   +1 more source

Intrinsically Secure Non-Volatile Memory Using ReRAM Devices

open access: yesIEEE Access, 2022
The paper describes a device-level encryption approach for implementing intrinsically secure non-volatile memory (NVM) using resistive RAM (ReRAM). Data are encoded in the ReRAM filament morphology, making it robust to both electrical and optical probing
Junjun Huan   +5 more
doaj   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

open access: yesSmall, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong   +9 more
wiley   +1 more source

Localized Metal Doping Effect on Switching Behaviors of TaOx-based RRAM Device

open access: yes, 2016
Memory unit, especially the non-volatile memory (NVM), is an indispensable component in a high performance electronic systems which aims at efficient information processing and storage.
Fang, Yichen   +15 more
core   +1 more source

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