Results 61 to 70 of about 1,346 (191)

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

open access: yesAdvanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki   +3 more
wiley   +1 more source

Efficient DNN Execution on Intermittently-Powered IoT Devices With Depth-First Inference

open access: yesIEEE Access, 2022
Program execution on intermittently powered Internet-of-Things (IoT) devices must ensure forward progress in the presence of frequent power failures. A general solution is intermittent computing, by which the program states are frequently checkpointed to
Mingsong Lv, Enyu Xu
doaj   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

open access: yesAdvanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison   +4 more
wiley   +1 more source

Efficient Logging in Non-Volatile Memory by Exploiting Coherency Protocols [PDF]

open access: yes, 2017
Non-volatile memory (NVM) technologies such as PCM, ReRAM and STT-RAM allow processors to directly write values to persistent storage at speeds that are significantly faster than previous durable media such as hard drives or SSDs.
Larus, James R.   +5 more
core   +1 more source

Analysis on hybrid memory architecture for big data application

open access: yes大数据, 2018
Due to the limited scalability of DRAM,it is hard to optimize the performance of big data analysis and the big data applications.The new non-volatile memory (NVM) brings the opportunity to improve the performance and efficiency for big data applications ...
Xin LI, Xuan CHEN, Zhiqiu HUANG
doaj  

SMART: A Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory

open access: yesIEEE Access, 2020
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power operation.
Nikhil Rangarajan   +4 more
doaj   +1 more source

Unlocking Ferroelectricity in Hafnia: From Phase Origins to Device Integration

open access: yesInterdisciplinary Materials, EarlyView.
This review provides a systematic overview of the critical factors for inducing ferroelectricity in hafnia‐based systems, covering multiple dimensions such as physical origin mechanisms, materials research, integration strategies, and emerging application areas.
Jiangzhen Niu   +10 more
wiley   +1 more source

On The Energy-Efficiency of Byte-Addressable Non-Volatile Memory [PDF]

open access: yes, 2015
Non-Volatile Memory (NVM) technology holds promise to replace SRAM and DRAM at various levels of the memory hierarchy. The interest in NVM is motivated by the difficulty faced in scaling DRAM beyond 22 nm and, long-term, lower cost per bit.
Nikolopoulos, Dimitrios   +2 more
core   +1 more source

Impact of analog memory device failure on in-memory computing inference accuracy

open access: yesAPL Machine Learning, 2023
In-memory computing using analog non-volatile memory (NVM) devices can improve the speed and reduce the latency of deep neural network (DNN) inference. It has been recently shown that neuromorphic crossbar arrays, where each weight is implemented using ...
Ning Li   +3 more
doaj   +1 more source

Physical Unclonable Function Based on 3D‐NAND Flash Array Structure With Multi‐Chip Implementation

open access: yesSmall, EarlyView.
Physical unclonable function (PUF) based on a 3D‐NAND flash array is proposed, featuring a multi‐chip structure and a massive challenge–response pair (CRP) capacity. The presented utilizes intrinsic string current variations experimentally verified across eight fabricated 48 × 24 NAND flash arrays.
Hwiho Hwang   +4 more
wiley   +1 more source

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