Results 61 to 70 of about 12,434,327 (206)

Analysis on hybrid memory architecture for big data application

大数据, 2018
Due to the limited scalability of DRAM,it is hard to optimize the performance of big data analysis and the big data applications.The new non-volatile memory (NVM) brings the opportunity to improve the performance and efficiency for big data applications ...
Xin LI, Xuan CHEN, Zhiqiu HUANG
doaj  

Efficient DNN Execution on Intermittently-Powered IoT Devices With Depth-First Inference

IEEE Access, 2022
Program execution on intermittently powered Internet-of-Things (IoT) devices must ensure forward progress in the presence of frequent power failures. A general solution is intermittent computing, by which the program states are frequently checkpointed to
Mingsong Lv, Enyu Xu
doaj   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

SMART: A Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory

IEEE Access, 2020
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power operation.
Nikhil Rangarajan, Satwik Patnaik, Johann Knechtel, Ozgur Sinanoglu, Shaloo Rakheja   +4 more
doaj   +1 more source

Ultralow‐Thermal‐Threshold CsPbBr3 Quantum Dot Memristor for Thermal‐Aware In‐Memory Computing With Physical Pruning

Advanced Computing, Volume 1, Issue 1, December 2026.
A CsPbBr3 perovskite quantum dot thermal‐threshold memristor (TTM) with an ultralow 50°C writing threshold, 105–106 on/off ratio, and a 0.28 V reversible erase is reported. A saliency‐driven smart mapping algorithm allocates high‐importance weights to cold regions and low‐importance weights to hotspots.
Shuaidi Wu, Yuezhong Lu, Wenkang Zhong, Qingwei Shi, Song He, Qinghua Sun, Xiaofeng Wang, Baochang Cheng, Jie Zhao   +8 more
wiley   +1 more source

Impact of analog memory device failure on in-memory computing inference accuracy

APL Machine Learning, 2023
In-memory computing using analog non-volatile memory (NVM) devices can improve the speed and reduce the latency of deep neural network (DNN) inference. It has been recently shown that neuromorphic crossbar arrays, where each weight is implemented using ...
Ning Li, Hsinyu Tsai, Vijay Narayanan, Malte Rasch   +3 more
doaj   +1 more source

Intrinsically Secure Non-Volatile Memory Using ReRAM Devices

IEEE Access, 2022
The paper describes a device-level encryption approach for implementing intrinsically secure non-volatile memory (NVM) using resistive RAM (ReRAM). Data are encoded in the ReRAM filament morphology, making it robust to both electrical and optical probing
Junjun Huan, Nicholas Olexa, Brett Hochman, Swarup Bhunia, Rashmi Jha, Soumyajit Mandal   +5 more
doaj   +1 more source

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

Advanced Electronic Materials, Volume 12, Issue 19, 12 October 2026.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada, Alberto Mistroni, Ruolan Jia, Keerthi Dorai Swamy Reddy, Markus Fritscher, Felix Reichmann, Oliver Skibitzki, Juan Bautista Roldán, Helena Castán, Salvador Dueñas, Christian Wenger, Eduardo Pérez   +11 more
wiley   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, Volume 12, Issue 19, 12 October 2026.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source

Evaluating TLB (Translation Lookaside Buffer) Performance Overhead for NVM (non-volatile Memory) Hybrid System [PDF]

, 2020
As the non-volatile memory (NVM) technology offers near-DRAM performance and near-disk capacity, NVM has emerged as a new storage class. Conventional file systems, designed for hard disk drives or solid-state drives, need to be re-examined or even re ...
Guo, Xiang
core