Results 81 to 90 of about 1,341 (191)
Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.A novel electrical framework separates and quantifies remote HZO/SiO2 interface traps from local Si/SiO2 traps in ferroelectric FETs. By combining three distinct measurement techniques, the methodology reveals that remote traps, amplified by a capacitive projection factor, dominate device performance.
Haneul Lee +12 more
wiley +1 more source
The Evolution of Gas Sensors Into Neuromorphic Systems
Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.Gas sensors are vital for various applications, but conventional designs rely on separate sensing, memory, and processing units, limiting speed, power efficiency, and adaptability. Neuromorphic gas sensing overcomes these constraints by integrating all functions in a single device.
Kevin Dominguez +4 more
wiley +1 more source
Performance analysis for using non-volatile memory DIMMs
, 2017 DRAM scalability is becoming more challenging, pushing the focus of the research community towards alternative memory technologies. Many emerging non-volatile memory (NVM) devices are proving themselves to be good candidates to replace DRAM in the coming
Hughes, Clay +10 more
core +1 more source
Advanced Electronic Materials, Volume 11, Issue 21, December 17, 2025.Memristive device exhibits multi‐modal switching between volatile and nonvolatile states using a simple measurement setup. In‐sensor reservoir computing based on memristive device accurately reconstructs ECG waveforms and predicts pH changes at ultralow energy.
June Soo Kim +7 more
wiley +1 more source
NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Non-volatile Memory
, 2013 Various new non-volatile memory (NVM) technologies have emerged recently. Among all the investigated new NVM candidate technologies, spin-torque transfer memory (STT-RAM, or MRAM), phase change memory (PCRAM), and resistive memory (ReRAM) are regarded as
Xiangyu Dong +7 more
core +1 more source
A Technique for Improving Lifetime of Non-Volatile Caches Using Write-Minimization
Journal of Low Power Electronics and Applications, 2016 While non-volatile memories (NVMs) provide high-density and low-leakage, they also have low write-endurance. This, along with the write-variation introduced by the cache management policies, can lead to very small cache lifetime.
Sparsh Mittal, Jeffrey Vetter
doaj +1 more source
Advanced Intelligent Systems, Volume 7, Issue 12, December 2025.Ternary content addressable memory based on InGaZnO transistors is fabricated and its performance is evaluated through simulations for various distance‐based computing applications. Due to its high areal density, enhanced switching characteristics, and uniformity compared to other data similarity‐computing hardware candidates, the proposed memory is
Hyeong Jun Seo +5 more
wiley +1 more source
A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications [PDF]
, 2000 This paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications.
Hillenius, S. J. +17 more
core
Enabling Non-Volatile Memory for Data-intensive Applications [PDF]
, 2021 The emerging Non-Volatile Memory (NVM) technologies are reforming the computer architecture. NVM holds advantages includes a byte-addressable interface, low latency, high capacity, and in-memory computing capability.
Liu, Xiao
core
A Multi-level Memristor Based on Al-Doped HfO2 Thin Film
Nanoscale Research Letters, 2019 Non-volatile memory (NVM) will play a very important role in the next-generation digital technologies, including the Internet of things. The metal-oxide memristors, especially based on HfO2, have been favored by lots of researchers because of its simple ...
Lei Wu +4 more
doaj +1 more source