Results 71 to 80 of about 1,346 (191)

Intrinsically Secure Non-Volatile Memory Using ReRAM Devices

IEEE Access, 2022
The paper describes a device-level encryption approach for implementing intrinsically secure non-volatile memory (NVM) using resistive RAM (ReRAM). Data are encoded in the ReRAM filament morphology, making it robust to both electrical and optical probing
Junjun Huan, Nicholas Olexa, Brett Hochman, Swarup Bhunia, Rashmi Jha, Soumyajit Mandal   +5 more
doaj   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Energy-Efficient Streaming Using Non-volatile Memory [PDF]

, 2010
The disk and the DRAM in a typical mobile system consume a significant fraction (up to 30%) of the total system energy. To save on storage energy, the DRAM should be small and the disk should be spun down for long periods of time.
Hartel, Pieter H., Khatib, Mohammed G., van Dijk, Hylke W.   +2 more
core   +1 more source

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

Advanced Science, Volume 13, Issue 37, 3 July 2026.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +1 more source

Vertical versus lateral tunneling FET non-volatile memory cell [PDF]

This work reports a comparison of high-k AbO(3)/HfO2/Al2O3 dielectric stack Tunnel FETs with both vertical tunneling and lateral tunneling, as non-volatile memory (NVM) cells. Tunnel FET NVM are fabricated and characterized to evaluate their potential as
Ionescu, Adrian M., Tomar, Saurabh, Biswas, Arnab   +2 more
core   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, Volume 36, Issue 44, 1 June 2026.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

NGraph: Parallel Graph Processing in Hybrid Memory Systems

IEEE Access, 2019
Big data applications like graph processing are highly imposed on memory capacity. Byte-addressable non-volatile memory (NVM) technologies can offer much larger memory capacity, lower cost per bit relative to traditional DRAM. They are expected to play a
Wei Liu, Haikun Liu, Xiaofei Liao, Hai Jin, Yu Zhang   +4 more
doaj   +1 more source

Emerging non-volatile memory (NVM) technologies based nano-oscillators: Materials to applications

Journal of Applied Physics
This comprehensive study provides a detailed review toward ongoing research on emerging non-volatile memory technologies based nano-oscillators, i.e., from the perspective of materials to applications. Depending on the materials used to fabricate them, the whole class of emerging nano-oscillators has been broadly classified into two categories: (i ...
Manoj Kumar, Manan Suri
openaire   +1 more source

Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO2‐ZrO2 by Proper Tuning of Ferro and Antiferroelectricity

Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li, Padma Srivari, Mari Honkanen, Turkka Salminen, Sayani Majumdar   +4 more
wiley   +1 more source

Lead‐free inorganic halide perovskite‐based synaptic memory for next generation neuromorphic computing

InfoMat, Volume 8, Issue 6, June 2026.
Lead‐free inorganic halide perovskites enable resistive switching synaptic devices capable of mimicking biological learning and multimodal information processing, offering a promising platform for next‐generation neuromorphic computing and artificial intelligence hardware. Abstract Inorganic halide perovskites (IHPs) have emerged as promising materials
Subhasish Chanda, Deepak Kumar, Iman Biswas, Manisha Sharma, Youngmin Lee, Sejoon Lee, Sanjeev Kumar Sharma, Aniruddha Mondal   +7 more
wiley   +1 more source