Results 71 to 80 of about 11,788,264 (205)

Ferroelectric HfO2 based devices fabrication and remaining issues

open access: yes, 2019
International audienceNew computer generations require micro-processors in close proximity to non-volatile memories (NVM), both working with low power consumption and high write speed. Since current FLASH technology cannot perform at these specifications,
Bouaziz, Jordan   +3 more
core   +7 more sources

Beyond Conventional Ferroelectric Field‐Effect Transistors: Recent Advances in Materials, Architectures, and Functional Applications

open access: yesAdvanced Physics Research, Volume 5, Issue 9, September 2026.
Ferroelectric field‐effect transistors (FeFETs) are advancing beyond conventional memory transistors into multifunctional hardware platforms enabled by emerging ferroelectric materials, scalable architectures, and neuromorphic/optoelectronic functionalities. Through HfO2‐based, two‐dimensional, and organic ferroelectrics, FeFETs achieve CMOS‐compatible
Hyeseoung Lee   +3 more
wiley   +1 more source

Toward Sub-1V FRAM: Ultra-low Field Operation and Excellent Retention (10y/85°C) by Stack Engineering

open access: yes, 2022
1
T. Werner   +9 more
core  

NGraph: Parallel Graph Processing in Hybrid Memory Systems

open access: yesIEEE Access, 2019
Big data applications like graph processing are highly imposed on memory capacity. Byte-addressable non-volatile memory (NVM) technologies can offer much larger memory capacity, lower cost per bit relative to traditional DRAM. They are expected to play a
Wei Liu   +4 more
doaj   +1 more source

Unlocking Ferroelectricity in Hafnia: From Phase Origins to Device Integration

open access: yesInterdisciplinary Materials, Volume 5, Issue 5, Page 749-771, September 2026.
This review provides a systematic overview of the critical factors for inducing ferroelectricity in hafnia‐based systems, covering multiple dimensions such as physical origin mechanisms, materials research, integration strategies, and emerging application areas.
Jiangzhen Niu   +10 more
wiley   +1 more source

Non-filamentary non-volatile memory elements as synapses in neuromorphic systems

open access: yes
Crossbar arrays of non-volatile memory (NVM) devices represent one possible path for implementing highly energy-efficient neuromorphic computing systems.
Jang, J.   +9 more
core   +1 more source

Redesign the Memory Allocator for Non-Volatile Main Memory

open access: yes, 2017
The non-volatile memory (NVM) has the merits of byte-addressability, fast speed, persistency and low power consumption, which make it attractive to be used as main memory.
Fang Liu   +4 more
core   +1 more source

Exploring data placement in racetrack memory based scratchpad memory

open access: yes, 2015
Scratchpad Memory (SPM) has been widely adopted in various computing systems to improve performance of data access. Recently, non-volatile memory technologies (NVMs) have been employed for SPM design to improve its capacity and reduce its energy ...
Mao, Haiyu   +7 more
core   +1 more source

TLSM: Tiered Log-Structured Merge-Tree Utilizing Non-Volatile Memory

open access: yesIEEE Access, 2020
Log-Structured Merge-tree (LSM-tree) organizes write-friendly and hierarchical structure, which leads to inevitable disk I/O from data compaction occuring between layers.
Jihwan Lee   +4 more
doaj   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

open access: yesAdvanced Functional Materials, Volume 36, Issue 44, 1 June 2026.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit   +5 more
wiley   +1 more source

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