Results 71 to 80 of about 12,434,327 (206)

NGraph: Parallel Graph Processing in Hybrid Memory Systems

IEEE Access, 2019
Big data applications like graph processing are highly imposed on memory capacity. Byte-addressable non-volatile memory (NVM) technologies can offer much larger memory capacity, lower cost per bit relative to traditional DRAM. They are expected to play a
Wei Liu, Haikun Liu, Xiaofei Liao, Hai Jin, Yu Zhang   +4 more
doaj   +1 more source

Beyond Conventional Ferroelectric Field‐Effect Transistors: Recent Advances in Materials, Architectures, and Functional Applications

Advanced Physics Research, Volume 5, Issue 9, September 2026.
Ferroelectric field‐effect transistors (FeFETs) are advancing beyond conventional memory transistors into multifunctional hardware platforms enabled by emerging ferroelectric materials, scalable architectures, and neuromorphic/optoelectronic functionalities. Through HfO2‐based, two‐dimensional, and organic ferroelectrics, FeFETs achieve CMOS‐compatible
Hyeseoung Lee, Seungjun Lee, Jung‐Kyu Lee, Sungjun Kim   +3 more
wiley   +1 more source

Unlocking Ferroelectricity in Hafnia: From Phase Origins to Device Integration

Interdisciplinary Materials, Volume 5, Issue 5, Page 749-771, September 2026.
This review provides a systematic overview of the critical factors for inducing ferroelectricity in hafnia‐based systems, covering multiple dimensions such as physical origin mechanisms, materials research, integration strategies, and emerging application areas.
Jiangzhen Niu, Xichen Tang, Wenhui Shi, Yunrui Xiu, Huimin Mao, Ye Tao, Xiaoning Zhao, Ya Lin, Zhongqiang Wang, Haiyang Xu, Yichun Liu   +10 more
wiley   +1 more source

TLSM: Tiered Log-Structured Merge-Tree Utilizing Non-Volatile Memory

IEEE Access, 2020
Log-Structured Merge-tree (LSM-tree) organizes write-friendly and hierarchical structure, which leads to inevitable disk I/O from data compaction occuring between layers.
Jihwan Lee, Won Gi Choi, Doyoung Kim, Hanseung Sung, Sanghyun Park   +4 more
doaj   +1 more source

Design exploration of emerging nano-scale non-volatile memory

, 2014
This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices.  Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic ...
Wang, Yuhao, Yu, Hao
core   +1 more source

Big data oriented hybrid memory systems

大数据, 2018
Big data applications put more pressure on memory system in the aspect of capacity and power consumption.However,limited by the shortcomings of DRAM and non-volatile memory(NVM),memory consists of single medium like DRAM or NVM is not competent for the ...
Xiaoyuan WANG, Xiaofei LIAO, Haikun LIU, Hai JIN   +3 more
doaj  

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, Volume 36, Issue 44, 1 June 2026.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO2‐ZrO2 by Proper Tuning of Ferro and Antiferroelectricity

Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.
Low‐power ferroelectric capacitors, based on superlattice HfO2‐ZrO2 is reported. With proper tuning of ferro and antiferroelectricity, an imprint‐free high switchable polarization charge (2Pr of 76 µC/cm2) is obtained with 2MV/cm leading to linear analog weight update and non‐volatile retention, providing a design guideline for emerging non‐volatile ...
Xinye Li, Padma Srivari, Mari Honkanen, Turkka Salminen, Sayani Majumdar   +4 more
wiley   +1 more source

Lead‐free inorganic halide perovskite‐based synaptic memory for next generation neuromorphic computing

InfoMat, Volume 8, Issue 6, June 2026.
Lead‐free inorganic halide perovskites enable resistive switching synaptic devices capable of mimicking biological learning and multimodal information processing, offering a promising platform for next‐generation neuromorphic computing and artificial intelligence hardware. Abstract Inorganic halide perovskites (IHPs) have emerged as promising materials
Subhasish Chanda, Deepak Kumar, Iman Biswas, Manisha Sharma, Youngmin Lee, Sejoon Lee, Sanjeev Kumar Sharma, Aniruddha Mondal   +7 more
wiley   +1 more source

Dynamic Random-Access Memory and Non-Volatile Memory Allocation Strategies for Container Tasks

Engineering Proceedings
To support multimedia and deep learning applications running on containers within a server, both processor cores and main memory space are critical resources for performance tuning. With the growing memory demands of applications to maintain intermediate
Che-Wei Chang, Chen-Yu Ho
doaj   +1 more source