Results 51 to 60 of about 1,341 (191)

Design exploration of emerging nano-scale non-volatile memory

open access: yes, 2014
This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices.  Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic ...
Wang, Yuhao, Yu, Hao
core   +1 more source

Impact of analog memory device failure on in-memory computing inference accuracy

open access: yesAPL Machine Learning, 2023
In-memory computing using analog non-volatile memory (NVM) devices can improve the speed and reduce the latency of deep neural network (DNN) inference. It has been recently shown that neuromorphic crossbar arrays, where each weight is implemented using ...
Ning Li   +3 more
doaj   +1 more source

Intrinsically Secure Non-Volatile Memory Using ReRAM Devices

open access: yesIEEE Access, 2022
The paper describes a device-level encryption approach for implementing intrinsically secure non-volatile memory (NVM) using resistive RAM (ReRAM). Data are encoded in the ReRAM filament morphology, making it robust to both electrical and optical probing
Junjun Huan   +5 more
doaj   +1 more source

Physical Unclonable Function Based on 3D‐NAND Flash Array Structure With Multi‐Chip Implementation

open access: yesSmall, EarlyView.
Physical unclonable function (PUF) based on a 3D‐NAND flash array is proposed, featuring a multi‐chip structure and a massive challenge–response pair (CRP) capacity. The presented utilizes intrinsic string current variations experimentally verified across eight fabricated 48 × 24 NAND flash arrays.
Hwiho Hwang   +4 more
wiley   +1 more source

Efficient Logging in Non-Volatile Memory by Exploiting Coherency Protocols [PDF]

open access: yes, 2017
Non-volatile memory (NVM) technologies such as PCM, ReRAM and STT-RAM allow processors to directly write values to persistent storage at speeds that are significantly faster than previous durable media such as hard drives or SSDs.
Larus, James R.   +5 more
core   +1 more source

Analysis on hybrid memory architecture for big data application

open access: yes大数据, 2018
Due to the limited scalability of DRAM,it is hard to optimize the performance of big data analysis and the big data applications.The new non-volatile memory (NVM) brings the opportunity to improve the performance and efficiency for big data applications ...
Xin LI, Xuan CHEN, Zhiqiu HUANG
doaj  

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

open access: yesSmall, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong   +9 more
wiley   +1 more source

Localized Metal Doping Effect on Switching Behaviors of TaOx-based RRAM Device

open access: yes, 2016
Memory unit, especially the non-volatile memory (NVM), is an indispensable component in a high performance electronic systems which aims at efficient information processing and storage.
Fang, Yichen   +15 more
core   +1 more source

On The Energy-Efficiency of Byte-Addressable Non-Volatile Memory [PDF]

open access: yes, 2015
Non-Volatile Memory (NVM) technology holds promise to replace SRAM and DRAM at various levels of the memory hierarchy. The interest in NVM is motivated by the difficulty faced in scaling DRAM beyond 22 nm and, long-term, lower cost per bit.
Nikolopoulos, Dimitrios   +2 more
core   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

open access: yesAdvanced Functional Materials, Volume 36, Issue 44, 1 June 2026.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit   +5 more
wiley   +1 more source

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