Results 51 to 60 of about 11,788,264 (205)
Advanced Electronic Materials, EarlyView.Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada +11 more
wiley +1 more source
Excellent Switching Performances of TiON/HZO/MoS2 Ferroelectric Diode
, 2022 1
Yunjeong Hwang +10 more
core
Advanced Electronic Materials, EarlyView.In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
Effect of dead layer on ferroelectric HZO films for low thermal budget
, 2022 1
HWANG, HYUNSANG, 오승열
core
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Automatic code conversion for non-volatile memory
, 2018 Non-Volatile Memories (NVMs), such as Phase Change Memories (PCMs) and Resistive RAMs (ReRAMs), have been recently proposed as a main memory due to their higher capacity and low leakage power consumption compared to traditional DRAMs. In order to support
Yongjun Park +7 more
core +1 more source
Evaluating TLB (Translation Lookaside Buffer) Performance Overhead for NVM (non-volatile Memory) Hybrid System [PDF]
, 2020 As the non-volatile memory (NVM) technology offers near-DRAM performance and near-disk capacity, NVM has emerged as a new storage class. Conventional file systems, designed for hard disk drives or solid-state drives, need to be re-examined or even re ...
Guo, Xiang
core
Analysis on hybrid memory architecture for big data application
大数据, 2018 Due to the limited scalability of DRAM,it is hard to optimize the performance of big data analysis and the big data applications.The new non-volatile memory (NVM) brings the opportunity to improve the performance and efficiency for big data applications ...
Xin LI, Xuan CHEN, Zhiqiu HUANG
doaj
Efficient DNN Execution on Intermittently-Powered IoT Devices With Depth-First Inference
IEEE Access, 2022 Program execution on intermittently powered Internet-of-Things (IoT) devices must ensure forward progress in the presence of frequent power failures. A general solution is intermittent computing, by which the program states are frequently checkpointed to
Mingsong Lv, Enyu Xu
doaj +1 more source
Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation
Advanced Electronic Materials, EarlyView.A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang +6 more
wiley +1 more source