Results 51 to 60 of about 1,346 (191)

Coexistence of non-volatile and volatile characteristics of the Pt/TaOx/TiN device

Results in Physics, 2022
Here, we have identified the volatile and non-volatile traits of Pt/TaOx/TiN device through the various electrical experiments by controlling the compliance current (CC) and determined the availability of this device as a memristor.
Seokyeon Yun, Jongmin Park, Myounggon Kang, Sungjun Kim   +3 more
doaj   +1 more source

Evaluating TLB (Translation Lookaside Buffer) Performance Overhead for NVM (non-volatile Memory) Hybrid System [PDF]

, 2020
As the non-volatile memory (NVM) technology offers near-DRAM performance and near-disk capacity, NVM has emerged as a new storage class. Conventional file systems, designed for hard disk drives or solid-state drives, need to be re-examined or even re ...
Guo, Xiang
core   +1 more source

ExTENDS: Efficient Data Placement and Management for Next Generation PCM-Based Storage Systems

IEEE Access, 2019
Although flash memory solid state drives (FSSDs) outperform traditional hard disk drives (HDDs), their performance still fails to cope up with the perennial doubling speeds of microprocessors, regardless of the available high bandwidth. To alleviate this
Ronnie Mativenga, Prince Hamandawana, Se Jin Kwon, Tae-Sun Chung   +3 more
doaj   +1 more source

Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories

Journal of Low Power Electronics and Applications, 2021
Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance ...
Mohammad Nasim Imtiaz Khan, Shivam Bhasin, Bo Liu, Alex Yuan, Anupam Chattopadhyay, Swaroop Ghosh   +5 more
doaj   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

Performance analysis for using non-volatile memory DIMMs [PDF]

, 2017
DRAM scalability is becoming more challenging, pushing the focus of the research community towards alternative memory technologies. Many emerging non-volatile memory (NVM) devices are proving themselves to be good candidates to replace DRAM in the coming
Hughes, Clay, Amro Awad, Robert Hoekstra, Clay Hughes, Simon Hammond, Hammond, Simon, Scott Hemmert, Awad, Amro, Arun Rodrigues, Rodrigues, Arun, Hemmert, Scott   +10 more
core   +1 more source

Exploring the Design Space for Crossbar Arrays Built With Mixed-Ionic-Electronic-Conduction (MIEC) Access Devices

IEEE Journal of the Electron Devices Society, 2015
Large-scale 3-D crossbar arrays offer a path to both high-density storage class memory and novel non-Von Neumann computation. However, such arrays require each non-volatile memory (NVM) element to have its own non-linear access device (AD), which must ...
Pritish Narayanan, Geoffrey W. Burr, Rohit S. Shenoy, Samantha Stephens, Kumar Virwani, Alvaro Padilla, Bulent N. Kurdi, Kailash Gopalakrishnan   +7 more
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Non-volatile Memory [PDF]

, 2013
Various new non-volatile memory (NVM) technologies have emerged recently. Among all the investigated new NVM candidate technologies, spin-torque transfer memory (STT-RAM, or MRAM), phase change memory (PCRAM), and resistive memory (ReRAM) are regarded as
Xiangyu Dong, Cong Xu, Dong, Xiangyu, Yuan Xie, Xie, Yuan, Jouppi, Norm, Norm Jouppi, Xu, Cong   +7 more
core   +1 more source