Results 221 to 230 of about 163,724 (263)

Non-volatile spin-transfer torque RAM (STT-RAM): Data, analysis and design requirements for thermal stability

2010 Symposium on VLSI Technology, 2010
The thermal stability of STT-RAM is measured by multiple techniques and compared with theory. The read disturb rate is found to be determined by the standby thermal stability, but the error rate at target read currents is higher than expected. The implication for the design of 1 Gb STT-RAM is that 10 year room temperature data retention as well as 1000
A. Driskill-Smith, S. Watts, V. Nikitin, D. Apalkov, D. Druist, R. Kawakami, X. Tang, X. Luo, A. Ong, E. Chen   +9 more
openaire   +1 more source

Achieving over 95% yield of sub-1 ppm BER with retention over 10 years at 125 °C and endurance of 1 × 1012 cycles towards automotive non-volatile RAM applications

Journal of Semiconductors
Magnetic tunnel junction (MTJ) based spin transfer torque magnetic random access memory (STT-MRAM) has been gaining tremendous momentum in high performance microcontroller (MCU) applications.
D. Zeng, F. Meng, Ruofei Chen, Yang Gao, Yihui Sun, Junlu Gong, Yongzhao Peng, Qijun Guo, Z. Deng, Weiming He, Baoyu Xiong, Jia Hou, Jichao Li, Wei Fang, Qiang Dai, Yaohua Wang, Shikun He   +16 more
semanticscholar   +1 more source

Relaxing non-volatility for fast and energy-efficient STT-RAM caches

2011 IEEE 17th International Symposium on High Performance Computer Architecture, 2011
Spin-Transfer Torque RAM (STT-RAM) is an emerging non-volatile memory technology that is a potential universal memory that could replace SRAM in processor caches. This paper presents a novel approach for redesigning STT-RAM memory cells to reduce the high dynamic energy and slow write latencies.
Clinton W. Smullen, Vidyabhushan Mohan, Anurag Nigam, Sudhanva Gurumurthi, Mircea R. Stan   +4 more
openaire   +1 more source

28nm advanced CMOS resistive RAM solution as embedded non-volatile memory

2014 IEEE International Reliability Physics Symposium, 2014
A back-end integrated Resistive Random Access Memory (ReRAM) (TiN/HfO 2 /Ti/TiN) in advanced 28nm CMOS process is evaluated. Significant operating margins and high performances identified at device level (read margin, low power set/reset, endurance and retention) are demonstrated to be significantly reduced on larger statistics, i.e.
Benoist, Antoine, Blonkowski, S., Jeannot, S., Denorme, S., Damiens, J., Berger, J., Candelier, P., Vianello, E., Grampeix, H., Nodin, J., Jalaguier, E., Perniola, L., Allard, Bruno   +12 more
openaire   +1 more source

Non-volatile Spin-Transfer Torque RAM (STT-RAM): An analysis of chip data, thermal stability and scalability

2010 IEEE International Memory Workshop, 2010
STT-RAM (Spin-Transfer Torque Random Access Memory) is a fast (≪10 ns), scalable, durable, non-volatile memory technology that is easily embedded in standard CMOS processes. An STT-RAM memory cell consists of an access transistor and a magnetic tunnel junction (MTJ) storage element (Figure 1).
A. Driskill-Smith, S. Watts, D. Apalkov, D. Druist, X. Tang, Z. Diao, X. Luo, A. Ong, V. Nikitin, E. Chen   +9 more
openaire   +1 more source

A Non-Volatile Buffered Main Memory Using Phase-Change RAM

2012
The new trends of memory semi-conductor technology are changing and developing. Phase-Change RAM (PRAM), Ferroelectric RAM (FeRAM), Magnetic RAM (MRAM) and Resistive RAM (RRAM) are going to take center stage of main memory material of new computer systems in next decade. PRAM also has higher dense, it can keep data about four times more than DRAM.
Do-Heon Lee, Chung-Pyo Hong, Shin-Dug Kim   +2 more
openaire   +1 more source

Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016
Various RRAM concepts are currently being investigated (Oxide based RAM, Conductive Bridge RAM), all showing pros and cons depending on the architecture and memory stack. As the specifications are strongly application-dependent, it is likely that the RRAM technology will be bound to a specific market segment.
G. Molas, G. Piccolboni, M. Barci, B. Traore, J. Guy, G. Palma, E. Vianello, P. Blaise, J. M. Portal, M. Bocquet, A. Levisse, B. Giraud, J. P. Noel, M. Harrand, M. Bernard, A. Roule, B. De Salvo, L. Perniola   +17 more
openaire   +1 more source

A Microcomputer Chip With Non-Volatile Shadow Ram for Consumer Applications

IEEE Transactions on Consumer Electronics, 1986
Using a double cell approach combining static and non-volatile memory, a dedicated microcomputer chip includes a memory which operates at the full micro speed, yet can retain data even when the power supply has been removed. Applications of the device include electronicect- onic tuning systems, analog value settings, white goods, smart telephones ...
openaire   +1 more source

An Ultra Low-Power Non-Volatile Memory Design Enabled by Subquantum Conductive-Bridge RAM

2016 IEEE 8th International Memory Workshop (IMW), 2016
Conductive-bridge RAM (CBRAM) memory cells offer speed, voltage, and energy advantages over floating gate flash cells. Here, we describe a memory design which carries these cell-level advantages up to the product level, achieving 100x lower read and write power and 10x lower standby power than typical flash-based designs.
Nathan Gonzales, John Dinh, Derric Lewis, Nad Gilbert, Bard Pedersen, Deepak Kamalanathan, John R. Jameson, Shane Hollmer   +7 more
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Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2006
We report on the electrical characterisation of nanoscale conductive bridging memory cells, composed of a thin solid state electrolyte layer sandwiched between an oxidizable anode and an inert cathode. Low power resistive switching operation, the large scalability potential including multi-level-capability (MLC) and the investigated reliability aspects,
M. Kund, G. Beitel, C.-U. Pinnow, T. Rohr, J. Schumann, R. Symanczyk, K. Ufert, G. Muller   +7 more
openaire   +1 more source