Results 41 to 50 of about 163,724 (263)
Nanowire Volatile RAM as an Alternative to SRAM
, 2014 Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage power control
Khasanvis, Santosh +2 more
core +1 more source
NVPE: An FPGA-Based Non-Volatile Processor Emulator for Intermittent Computing
ProceedingsResearch on novel memory storage devices that occupy less physical area and are compatible with CMOS processes, such as resistive RAM, has led to the interesting study of non-volatile compute memories and devices.
Idris Somoye, Kevin Yang
doaj +1 more source
IET Computers & Digital Techniques, 2021 As a promising alternative to dynamic RAM, phase change memory (PCM) suffers from limited write endurance. Therefore, many research proposals on PCM security or reliability have focussed on the possible threat of wear‐out attacks from malicious ...
Xianzhong Zhou, Ying Wang
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Integrated semiconductor-magnetic random access memory system [PDF]
, 2001 The present disclosure describes a non-volatile magnetic random access memory (RAM) system having a semiconductor control circuit and a magnetic array element.
Blaes, Brent R., Katti, Romney R.
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Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)
Advanced Functional Materials, EarlyView.Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao +5 more
wiley +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, EarlyView.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
Advanced Materials, EarlyView.Biaxial compressive strain significantly enhances magnetoresistance and critical saturation fields in thin flakes of the 2D magnet CrSBr, along all three crystallographic axes. First‐principles calculations link these effects to strain‐induced increases in exchange interactions and magnetic anisotropy.
Eudomar Henríquez‐Guerra +19 more
wiley +1 more source
PLoS ONE, 2023 Several emerging non-volatile (NV) memory technologies are rising as interesting alternatives to build the Last-Level Cache (LLC). Their advantages, compared to SRAM memory, are higher density and lower static power, but write operations wear out the ...
Carlos Escuin +5 more
doaj +1 more source
Procedures and tools for acquisition and analysis of volatile memory on android smartphones [PDF]
, 2014 Mobile phone forensics have become more prominent since mobile phones have become ubiquitous both for personal and business practice. Android smartphones show tremendous growth in the global market share.
Heriyanto, Andri P
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Advanced Materials, EarlyView.The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source