Results 91 to 100 of about 2,786 (294)

Polarization‐Enabled Piezoelectric Tellurium–Selenium (TexSe1–x) Thin Films for Memory Switching and Artificial Synaptic Functions

Advanced Science, EarlyView.
Here, we demonstrate and investigate polarization‐enabled electromechanical responses in cryogenic physical vapor deposition (cryogenic PVD)‐deposited TexSe1‐x thin films, a tellurium‐based compound with a tunable bandgap and enhanced non‐centrosymmetry.
Chia‐Chen Chung, Mayur Chaudhary, Chia‐Hung Lo, Po‐Chien Lai, You‐Jie Lin, Ruei‐Hong Cyu, Yu‐Ren Peng, Bing‐Ni Gu, Zhao‐Feng Lou, Quynh Thi Le, Yi‐Jen Yu, Yen‐Fu Lin, Min‐Hung Lee, Ying‐Hao Chu, Chang‐Hong Shen, Der‐Hsien Lien, Yu‐Lun Chueh   +16 more
wiley   +1 more source

Emerging frontiers in two-dimensional sliding ferroelectrics

npj 2D Materials and Applications
The emergence of sliding ferroelectricity in 2D van der Waals materials has opened a new paradigm for designing nanoscale nonvolatile memories, where polarization switching is governed by interlayer sliding rather than conventional ion displacement. This
Qing Zhang, Aiqing Fan, Yongshuai Wang, Fan Wu, Lin Li, Hong Meng, Dechao Geng   +6 more
doaj   +1 more source

CHANNEL CAPACITY FORMULATIONS FOR NON-VOLATILE MEMORIES WITH UNREACHABLE LEVELS

Mağallaẗ Al-kūfaẗ Al-handasiyyaẗ
This paper investigates the channel capacity of unreachable memory cells (UMCs), where a cell is deemed -unreachable if it cannot store values beyond a specific state, .
Haider Abdul Hassan Hadi Al Kim
doaj   +1 more source

Two‐Dimensional Triferroics: From Fundamental Couplings to Multifunctional Applications

Advanced Science, EarlyView.
This graphic summarizes the three main types of currently reported 2D triferroic couplings. From the structural perspective, existing systems can be broadly classified into two categories, which exhibit distinct symmetry features and coupling behaviors. Beyond the lattice difference, a third type involves the interplay among ferroelectricity, magnetism,
Yang Li, Jialin Gong, Zhiqing Li
wiley   +1 more source

(Invited) Nonvolatile Memories for Nano and Giga Electronics

, 2011
Memory devices are critical elements in ULSIC. It is also desirable to include memory functions in a-Si:H TFTs for new and novel applications. In this paper, the author reviews and discusses recent developments on two types of nonvolatile memories in his
Yue Kuo
core   +1 more source

Superatom Distortion Induces Triferroicity and Spin Splitting in Two‐Dimensional Antiferromagnets

Advanced Science, EarlyView.
The incorporation of superatoms into a 2D square lattice induces symmetry breaking, thereby enabling concurrent coupling among magnetism, ferroelectricity, and ferroelasticity. This strategy achieves triferroic behavior—characterized by spin‐split antiferromagnetic ground states—and offers a viable pathway toward energy‐efficient spintronic devices ...
Zhen Gao, Fengxian Ma, Guoping Gao, Weizhen Meng, Ying Liu, Yandong Ma, Yalong Jiao   +6 more
wiley   +1 more source

Error-Correcting Schemes with Dynamic Thresholds in Nonvolatile Memories

, 2011
Predetermined fixed thresholds are commonly used in nonvolatile memories for reading binary sequences, but they usually result in significant asymmetric errors after a long duration, due to voltage or resistance drift.
Bruck, Jehoshua, Anxiao Jiang, Jehoshua Bruck, Hongchao Zhou, Jiang, Anxiao (Andrew), Zhou, Hongchao   +5 more
core   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Layered perovskites with giant spontaneous polarizations for nonvolatile memories

, 2019
A series of titanate-based layered perovskites having large values of the spontaneous polarization P-s were developed for their applcations to nonvolatile ferroelectric random access memories. Among these, the Nd-modified bismuth titanate [Bi4-xNdxTi3O12
Jang, HM, Chon, U, Kim, MG, Chang, CH
core   +1 more source

Randomness and Noise in Information Systems [PDF]

, 2013
This dissertation is devoted to the study of randomness and noise in a number of information systems including computation systems, storage systems, and natural paradigms like molecular systems, where randomness plays important and distinct roles ...
Zhou, Hongchao
core   +1 more source