Results 111 to 120 of about 280,489 (305)

Radiation Tests of Highly Scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories - Update 2010

, 2010
High-density, commercial, nonvolatile flash memories with NAND architecture are now available from several manufacturers. This report examines SEE effects and TID response in single-level cell (SLC) and multi-level cell (MLC) NAND flash memories ...
Nguyen, Duc N., Irom, Farokh
core  

Superatom Distortion Induces Triferroicity and Spin Splitting in Two‐Dimensional Antiferromagnets

Advanced Science, EarlyView.
The incorporation of superatoms into a 2D square lattice induces symmetry breaking, thereby enabling concurrent coupling among magnetism, ferroelectricity, and ferroelasticity. This strategy achieves triferroic behavior—characterized by spin‐split antiferromagnetic ground states—and offers a viable pathway toward energy‐efficient spintronic devices ...
Zhen Gao, Fengxian Ma, Guoping Gao, Weizhen Meng, Ying Liu, Yandong Ma, Yalong Jiao   +6 more
wiley   +1 more source

Size-dependent temperature instability in NiO–based resistive switching memory

, 2010
Resistive switching memory (RRAM) is attracting a strong interest as novel nonvolatile memories for high-density storage. Anyway this technology has to overcome two main issues before its use in real applications which are the high current needed for ...
Federico Nardi, Daniele Ielmini, Andrea L. Lacaita, IELMINI, DANIELE, LACAITA, ANDREA LEONARDO, NARDI, FEDERICO, CAGLI, CARLO, Carlo Cagli   +7 more
core   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Interlayer‐Sliding‐Enabled Multiferroicity and Giant Switchable Anomalous Hall Conductivity in RuO2Zn2F2 Bilayer

Advanced Science, EarlyView.
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga, Imran Khan, Ganie Suhail Ahmad, Jisang Hong   +3 more
wiley   +1 more source

Acoustic Emission Recording Using nonvolatile Digital Memories [PDF]

, 1979
The general trend in acoustic emission (AE) monitoring systems has been one of increasing complexity. This is particularly true in systems for continuous monitoring which are usually multichannel (perhaps 20 to 40) and incorporate a dedicated ...
Skorpik, James
core  

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS_{2} through Coulomb Engineering

Physical Review X
High-speed, nonvolatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication.
Jing Liang, Yuan Xie, Dongyang Yang, Shangyi Guo, Kenji Watanabe, Takashi Taniguchi, Jerry I. Dadap, David Jones, Ziliang Ye   +8 more
doaj   +1 more source

A flexible Hf0.5Zr0.5O2 thin film with highly robust ferroelectricity

Journal of Materiomics
Flexible hafnia-based ferroelectric memories are arousing much interest with the ever-growing demands for nonvolatile data storage in wearable electronic devices.
Xiang Zhou, Haoyang Sun, Jiachen Li, Xinzhe Du, He Wang, Zhen Luo, Zijian Wang, Yue Lin, Shengchun Shen, Yuewei Yin, Xiaoguang Li   +10 more
doaj   +1 more source

VO ₂ -based nonvolatile memories for next-generation computing: a state-variable framework for mechanisms, benchmarks, and applications

VO 2 -based nonvolatile memories are classified by retained state variables, linking write, retention, reset, readout, bottlenecks, and device roles across memory and synaptic applications.
Dae Joon Kang, Ha Young Choi
core   +1 more source