Results 131 to 140 of about 2,786 (294)

Polymer and organic nonvolatile memory devices

open access: yes, 2010
Organic molecules and semiconductors have been proposed as active part of a large variety of nonvolatile memory devices, including resistors, diodes and transistors. In this review, we focus on electrically reprogrammable nonvolatile memories.
Noh, Y.Y.   +17 more
core   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel   +6 more
wiley   +1 more source

MEFET-Based CAM/TCAM for Memory-Augmented Neural Networks

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Memory-augmented neural networks (MANNs) require large external memories to enable long-term memory storage and retrieval. Content-addressable memory (CAM) is a type of memory used for high-speed searching applications and is well-suited for MANNs ...
Sai Sanjeet   +2 more
doaj   +1 more source

Nonvolatile Dynamic Memories

open access: yes
Nonvolatile Dynamic Memories. This project will expand the knowledge base that will support the development of a frontier technology (superior memory chips) to be undertaken by an Australian based start-up company (QsRAM).

core  

On the Role of Preprocessing and Memristor Dynamics in Reservoir Computing for Image Classification

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Reservoir computing (RC) is an emerging recurrent neural network architecture that has attracted growing attention for its low training cost and modest hardware requirements. Memristor‐based circuits are particularly promising for RC, as their intrinsic dynamics can reduce network size and parameter overhead in tasks such as time‐series ...
Rishona Daniels   +4 more
wiley   +1 more source

Fast Identification of Critical Electrical Disturbs in Nonvolatile Memories

open access: yes, 2007
We propose a new methodology for a fast top-down identification of disturbs in large arrays of nonvolatile memories. The new strategy aims at providing the set of all the effective and dangerous disturbs present in a technology with no a priori selection
OLIVO, Piero, CHIMENTON, Andrea
core   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram   +10 more
wiley   +1 more source

Dielectric and fatigue properties of Pb(Zr0.53Ti0.47)O-3 thin films prepared from oxide precursors method

open access: yes, 2005
Fatigue is an important problem to be considered if a ferroelectric film is used for non-volatile memory devices. In this phenomena, the remanent polarization and coercive field properties degrades in cycles which increase in hysteresis loops.
Tsoukalas, D.   +7 more
core   +1 more source

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