Results 151 to 160 of about 2,786 (294)

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Large‐Scale p‐Type Nonvolatile FGFET Memory Array Based on 2H‐MoTe2

Advanced Electronic Materials
Transition metal dichalcogenides (TMDCs) based large‐scale p‐type floating‐gate field‐effect transistor (FGFET) memory array has been fabricated for the first time. Chemical‐vapor‐deposition grown seamless co‐planes 2H‐ and 1T′‐MoTe2 serve as the channel
Minglai Li, Zhixuan Cheng, Xionghui Jia, Jiamin Chen, Wanjin Xu, Yanping Li, Lun Dai   +6 more
doaj   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

Investigation of Analog Memristor Characteristics for Hardware Synaptic Weight in Multilayer Neural Network

Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.
The systematic design of memristor‐based neural network is provided by analog conductance state parameters to accurately emulate the software‐based high‐resolution weight at discrete device level. The requirement of discrete analog conductance of memristor device is measured as ≈50 states with nonlinearity value of ≈0.142 within the deviation range of ...
Jingon Jang, Yoonseok Song, Sungjun Park
wiley   +1 more source

Compact Modeling of Volatile‐Switching Electrochemical Metallization Memory Cells by Means of the Electromotive Force

Advanced Intelligent Systems, EarlyView.
A volatile‐switching compact model of electrochemical metallization memory cells for neuromorphic architecture is developed and validated by reliable reproduction of device characterization measurements: I−V sweeps, SET kinetics, relaxation dynamics.
Rana Walied Ahmad, Solomon Amsalu Chekol, Julius Rasbach, Susanne Hoffmann‐Eifert, Stephan Menzel   +4 more
wiley   +1 more source

A Memristor‐Based In‐Memory Computing System‐on‐Chip with Efficient Depthwise Convolution

Advanced Intelligent Systems, EarlyView.
We present a memristor‐based in‐memory computing (IMC) architecture that enables efficient depthwise convolution (DWC) acceleration. Fabricated in a system‐on‐chip with crossbar arrays, the design improves memory utilization. Experimental validation demonstrates the first hardware acceleration of DWC in IMC, achieving a digital comparable inference ...
Wenhao Song, Fuxi Cai, Sangsu Park, Zhaoyan Li, Seonghun Lee, Mingyi Rao, Woohyung Choi, Seungin Shin, Yan Zhu, Sujin Chae, Myoungsub Kim, Mingche Wu, Hyejung Choi, Yuan Dao, Jaeyun Yi, Youngman Cho, Seon Yong Cha, Ning Ge, Qiangfei Xia, Soo Gil Kim, Miao Hu, J. Joshua Yang   +21 more
wiley   +1 more source

Thermally Stable Organic Synaptic Transistors Using a High‐Tg Polymer Electret

Advanced Intelligent Systems, EarlyView.
A high–glass‐transition‐temperature cyclic olefin copolymer (COC) electret enables thermally stable organic synaptic transistors for neuromorphic operation in harsh environments. UV–ozone treatment increases the trap density in COC, providing robust multilevel conductance and key synaptic functions (excitatory postsynaptic current/ inhibitory ...
Hoyoung Cho, Bombi Kim, Kyoungeun Lee, Moohyun Kim, Chaegwang Lim, Yeyun Bae, Jaeyeop Lee, Jiyoon Oh, Hyeok Kim, Jeongkyun Roh   +9 more
wiley   +1 more source

Read-only Memories Final Report

, 1969
Integrated, metal oxide semiconductor memories with nonvolatile and electrically programmable ...
Osullivan, D. D., Cricchi, J. R., Lytle, W. S.   +2 more
core  

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source

Ising Solver Using Vertical NAND Flash Memory

Advanced Intelligent Systems, EarlyView.
Commercial V‐NAND flash memory is repurposed as a discrete‐time Ising solver by exploiting in‐memory current summation and read‐voltage‐controlled intrinsic noise. The system implements Hopfield neural‐network updates with simulated‐annealing‐like behavior, solving max‐cut problems with high accuracy and energy efficiency while using mass‐produced ...
Sung‐Ho Park, Yeongheon Yang, Jong‐Won Back, Jiseong Im, Ryun‐Han Koo, Jonghyun Ko, Dongseok Kwon, Jong‐Ho Lee   +7 more
wiley   +1 more source