Results 141 to 150 of about 2,786 (294)

Array‐Level Characterization of Cryogenic RRAM

open access: yesAdvanced Electronic Materials, EarlyView.
This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu   +7 more
wiley   +1 more source

Organic Ferroelectrics for Regulation of Electronic and Ionic Transport Toward Neuromorphic Applications

open access: yesAdvanced Physics Research
Organic ferroelectrics (OFEs) have been of significant research interest not only for nonvolatile memory applications but also for their unique material characteristics such as mechanical softness, biocompatibility, facile processibility, and chemically ...
Minsub Lee, Beomjin Jeong
doaj   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

open access: yesAdvanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Emerging Nonvolatile Memories for Machine Learning

open access: yes
28 pages, 13 figures, 1 ...
Adnan Mehonic, Dovydas Joksas
openaire   +2 more sources

Content-assisted file decoding for nonvolatile memories

open access: yes, 2012
—Nonvolatile memories (NVMs) such as flash memo-ries play a significant role in meeting the data storage require-ments of today’s computation activities.
Bruck, Jehoshua   +8 more
core   +1 more source

Morphotropic Phase Boundary Engineering via Heterostructure for Low‐Voltage Ferroelectric Capacitors

open access: yesAdvanced Electronic Materials, EarlyView.
Morphotropic phase boundary engineering in HfxZr1‐xO2 heterostructures enables low‐voltage and fast ferroelectric switching. This layer promotes polarization switching near 0 V, resulting in ≈25% reduction in coercive voltage and enhanced capacitance. This heterostructure design provides a practical route for energy‐efficient ferroelectric capacitors ...
Changhyeon Han   +7 more
wiley   +1 more source

Acoustic Emission Recording Using nonvolatile Digital Memories

open access: yes, 1979
The general trend in acoustic emission (AE) monitoring systems has been one of increasing complexity. This is particularly true in systems for continuous monitoring which are usually multichannel (perhaps 20 to 40) and incorporate a dedicated ...
Skorpik, James
core  

A Phase-Separated Polymer Blocking Layer for Enhancing Data Retention in Flexible Printed Nonvolatile Organic Memories

open access: yes, 2019
In this work, we present enhanced data retention characteristics of flexible printed organic nonvolatile thin-film transistor (TFT) memories using a phase-separated polymer blocking layer. The memory devices are configured in a bottom-gate bottom-contact
Yongwoo Lee   +7 more
core   +1 more source

Structure and Spectroscopic Characterisation of Phenanthroline‐Based Iodobismuthate(III) Complexes Utilised for Raw Acoustic Signal Classification

open access: yesAdvanced Intelligent Discovery, EarlyView.
Memristors based on trimethylsulfonium (phenanthroline)tetraiodobismuthate have been utilised as a nonlinear node in a delayed feedback reservoir. This system allowed an efficient classification of acoustic signals, namely differentiation of vocalisation of the brushtail possum (Trichosurus vulpecula).
Ewelina Cechosz   +4 more
wiley   +1 more source

Highly Efficient Neuromorphic Computing Systems With Emerging Nonvolatile Memories

open access: yes, 2020
Emerging nonvolatile memory based hardware neuromorphic computing systems have enabled the implementation of general vector-matrix multiplication in a manner to fuse computation and memory at the same physical location.
Yan, Bonan
core  

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