Results 141 to 150 of about 280,489 (305)
Advanced Science, EarlyView.A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Seeun Lee +6 more
wiley +1 more source
Large‐Scale p‐Type Nonvolatile FGFET Memory Array Based on 2H‐MoTe2
Advanced Electronic MaterialsTransition metal dichalcogenides (TMDCs) based large‐scale p‐type floating‐gate field‐effect transistor (FGFET) memory array has been fabricated for the first time. Chemical‐vapor‐deposition grown seamless co‐planes 2H‐ and 1T′‐MoTe2 serve as the channel
Minglai Li +6 more
doaj +1 more source
Neuromorphic Devices and Computing for Sensing, Memory, and Control
Advanced Science, EarlyView.This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhengguang Zhu +2 more
wiley +1 more source
Advanced Science, EarlyView.As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee +3 more
wiley +1 more source
Probabilistic Computing via Gate‐Tunable Random Telegraph Noise
Advanced Science, EarlyView.Intrinsic random telegraph noise in metal–oxide–semiconductor field‐effect transistors is harnessed to create gate‐tunable probabilistic bits. By modulating carrier‐trapping dynamics, the device produces stochastic binary outputs with a continuous bias‐to‐probability transfer.
Gyungwon Yun +8 more
wiley +1 more source
Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell
Advanced Electronic Materials, EarlyView.This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao +15 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada +11 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li +4 more
wiley +1 more source
Highly Efficient Neuromorphic Computing Systems With Emerging Nonvolatile Memories
, 2020 Emerging nonvolatile memory based hardware neuromorphic computing systems have enabled the implementation of general vector-matrix multiplication in a manner to fuse computation and memory at the same physical location.
Yan, Bonan
core
Advanced Electronic Materials, EarlyView.In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source