Results 121 to 130 of about 2,786 (294)

Temperature‐Graded Deposition of HfZrOx for Ferroelectric Capacitors With Enhanced Polarization, Reliability, and Switching

Advanced Electronic Materials, EarlyView.
Temperature‐graded ALD of HfZrOx (HZO) enables strain‐enhanced stabilization of the ferroelectric o‐phase, achieving simultaneously high polarization, fast switching, and robust endurance in BEOL‐compatible FeCAPs. ABSTRACT Ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors hold great promise for next‐generation nonvolatile memory and logic applications ...
Sheng‐Yen Zheng, Yin‐Chen Sun, Yu‐Cheng Kao, Hsin‐Yu Hsu, Pin‐Jiun Wu, Yung‐Hsien Wu   +5 more
wiley   +1 more source

Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS_{2} through Coulomb Engineering

Physical Review X
High-speed, nonvolatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication.
Jing Liang, Yuan Xie, Dongyang Yang, Shangyi Guo, Kenji Watanabe, Takashi Taniguchi, Jerry I. Dadap, David Jones, Ziliang Ye   +8 more
doaj   +1 more source

A flexible Hf0.5Zr0.5O2 thin film with highly robust ferroelectricity

Journal of Materiomics
Flexible hafnia-based ferroelectric memories are arousing much interest with the ever-growing demands for nonvolatile data storage in wearable electronic devices.
Xiang Zhou, Haoyang Sun, Jiachen Li, Xinzhe Du, He Wang, Zhen Luo, Zijian Wang, Yue Lin, Shengchun Shen, Yuewei Yin, Xiaoguang Li   +10 more
doaj   +1 more source

Organic CuTCNQ integrated in complementary metal oxide semiconductor copper back end-of-line for nonvolatile memories

, 2006
Nanowires of the organometallic semiconductor CuTCNQ were grown from TCNQ vapor in 250 nm diameter vias of a Cu back end-of-line process. Corresponding prototypes of cross-point CuCuTCNQ nanowire/Al memories exhibited nonvolatile bistable conductive ...
De Jonge, Stijn, R. Müller, S. De Jonge, Muller, Robert, Myny, Kris, Heremans, Paul, D. J. Wouters, J. Genoe, Wouters, Dirk, Genoe, Jan, P. Heremans, K. Myny   +11 more
core   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

Advanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan   +4 more
wiley   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
wiley   +1 more source

On Error Correction for Nonvolatile Processing-In-Memory

2024 ACM/IEEE 51st Annual International Symposium on Computer Architecture (ISCA)
Processing in memory (PiM) represents a promising computing paradigm to enhance performance of numerous data-intensive applications. Variants performing computing directly in emerging nonvolatile memories can deliver very high energy efficiency. PiM architectures directly inherit the vulnerabilities of the underlying memory substrates, but they also ...
Hüsrev Cilasun, Salonik Resch, Zamshed I. Chowdhury, Masoud Zabihi, Yang Lv 0003, Brandon Zink, Jianping Wang 0006, Sachin S. Sapatnekar, Ulya R. Karpuzcu   +8 more
openaire   +2 more sources

Automated synthesis of EDACs for FLASH Memories with User-Selectable Correction Capability [PDF]

, 2010
Piazza, R., Michele Fabiano, Miele A., Piazza R., Caramia, M., Caramia M., Miele, A., Fabiano, Michele, Paolo Prinetto, Prinetto, Paolo Ernesto, Andrea Miele, Roberto Piazza, Maurizio Caramia   +12 more
core   +1 more source