Results 121 to 130 of about 280,489 (305)

Multiferroic‐Centric Materials and Systems Engineering for Battery Applications: An Insight Into Mechanisms, Strategies, and Characterizations

Advanced Science, EarlyView.
Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su, Yanda Zhu, Hao Peng, Manman Li, Xuzihan Zhang, Meixiao Wu, Siyuan Zhang, Yuhan Zeng, Jiwen Liao, Ming Luo, Hetaishan Huang, Yutong Wang, Sean Li, Wenxian Li   +13 more
wiley   +1 more source

Nonvolatile-Memory Characteristics of AlO--Implanted AI2O3

, 2009
The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention.
Robert Elliman (20007516), Salvy Russo (18029545), Suk-Ho Choi (1492645), K Belay (19660939), Sung Kim (59072), Min Kim (218786)   +5 more
core  

Sliding Ferroelectricity Driven Spin‐Layertronics in Altermagnetic Multilayers

Advanced Science, EarlyView.
Integrating sliding ferroelectricity with altermagnetism enables nonvolatile electrical control of spin and layer degrees of freedom. In bilayer CuF2, interlayer translation reverses layer‐locked spin‐split bands, establishing a multifunctional “spin‐layertronic” platform.
Rui Peng, Guangxu Su, Yangyang Fan, Jiaan Li, Fanxin Liu, Yee Sin Ang   +5 more
wiley   +1 more source

Nonvolatile Dynamic Memories

Nonvolatile Dynamic Memories. This project will expand the knowledge base that will support the development of a frontier technology (superior memory chips) to be undertaken by an Australian based start-up company (QsRAM).

core  

Automated synthesis of EDACs for FLASH Memories with User-Selectable Correction Capability [PDF]

, 2010
Piazza, R., Michele Fabiano, Miele A., Piazza R., Caramia, M., Caramia M., Miele, A., Fabiano, Michele, Paolo Prinetto, Prinetto, Paolo Ernesto, Andrea Miele, Roberto Piazza, Maurizio Caramia   +12 more
core   +1 more source

Wafer-Scale Arrays of Nonvolatile Polymer Memories with Microprinted Semiconducting Small Molecule/Polymer Blends

, 2015
Nonvolatile ferroelectric-gate field-effect transistors (Fe-FETs) memories with solution-processed ferroelectric polymers are of great interest because of their potential for use in low-cost flexible devices.
Bae, Insung, Park, Cheolmin, Insung Bae (1751764), Kang, Seok Ju, Cheolmin Park (1439899), Sun Kak Hwang (1439920), Richard Hahnkee Kim (1563205), Seok Ju Kang (1439923), Hwang, Sun Kak, Kim, Richard Hahnkee   +9 more
core   +1 more source

Retinomorphic Visual Processing Enabled by Contact‐Engineered IGZO Optoelectronic Synaptic Memtransistors

Advanced Science, EarlyView.
Here, we present an optoelectronic synaptic memtransistor (OSMT) integrating photoresponsive IGZO with contact‐engineered HfO2, enabling electrically and optically tunable synaptic weights. The device demonstrates broad range of tunable conductance states and array‐level image processing, highlighting its potential for intelligent machine vision ...
Donghyun Kang, San Nam, Dayul Nam, In‐Soo Kim, Myung‐Gil Kim, Sung Kyu Park, Yong‐Hoon Kim   +6 more
wiley   +1 more source

A reconfigurable hardware infrastructure for evaluating PUFs in non-volatile memories

HardwareX
Physical Unclonable Functions (PUFs) are widely recognized for deriving strong cryptographic keys from inherent manufacturing variations in hardware.
Florian Frank, Stefan Katzenbeisser
doaj   +1 more source

Design of Single-Molecule Multiferroics for Efficient Ultrahigh-Density Nonvolatile Memories. [PDF]

Adv Sci (Weinh), 2019
Yang Q, Zhong T, Tu Z, Zhu L, Wu M, Zeng XC.   +5 more
europepmc   +1 more source

Molecularly Engineered Wing‐Shaped Azobenzene Memristors for Logic‐in‐Memory and Edge Visual Intelligence

Advanced Science, EarlyView.
Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu, Tao Han, Jiahui Ding, Hong Lian, Lingling Yao, Zhaoxin Xu, Xingyu Zhang, Shuanglong Wang, Jiangnan Xia, Tianchi Zhang, Weiwei Kang, Qingchen Dong   +11 more
wiley   +1 more source