Results 81 to 90 of about 280,489 (305)

Current Status of Nonvolatile Semiconductor Memory Technology

, 2010
In this report, an overview of the current status of nonvolatile semiconductor memory technology is presented. We are reaching the integration limit of flash memories, and many new types of memories to replace conventional flash memories have been ...
Yoshihisa Fujisaki
core   +1 more source

Software-Based Self-Test of Set-Associative Cache Memories [PDF]

, 2011
Embedded microprocessor cache memories suffer from limited observability and controllability creating problems during in-system tests. This paper presents a procedure to transform traditional march tests into software-based self-test programs for set ...
Stefano Di Carlo, Alessandro Savino, Paolo Prinetto, Prinetto, Paolo Ernesto, Di Carlo, Stefano, Savino, Alessandro   +5 more
core   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Noise‐Tunable Memristor Enabling Programmable Probabilistic Neurons for Frequency‐Selective Time‐Series Signal Encoding

Advanced Materials, EarlyView.
Memristors offer tunable resistance and intrinsic instability, making them promising tunable noise sources. We propose a spiking‐rate‐programmable probabilistic neuron using a Ru/TaOx/Pt memristor, where resistance‐dependent noise enables frequency‐selective encoding.
Do Hoon Kim, Seoeun Jang, Hakseung Rhee, Min Gu Lee, Daehee Kim, Taewook Go, Woon Hyung Cheong, Hanchan Song, Kyung Min Kim   +8 more
wiley   +1 more source

Computing with nonvolatile memories for artificial intelligence

, 2022
In-memory computing shows the key advantages with respect to conventional digital computers, thanks to the non-von Neumann architecture which allows to carry out computation directly within the memory, without any data transfer.
Ielmini, Daniele, Pedretti, Giacomo
core   +1 more source

Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity

Advanced Materials, EarlyView.
Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen, Ke Yang, Yuhuan Li, Lingli Huang, Tianren Chen, Ming Yang, Jiong Zhao, Thuc Hue Ly   +7 more
wiley   +1 more source

Nanogap‐Engineerable Electromechanical System for Ultralow Power Memory

Advanced Science, 2018
Nanogap engineering of low‐dimensional nanomaterials has received considerable interest in a variety of fields, ranging from molecular electronics to memories.
Jian Zhang, Ya Deng, Xiao Hu, Jean Pierre Nshimiyimana, Siyu Liu, Xiannian Chi, Pei Wu, Fengliang Dong, Peipei Chen, Weiguo Chu, Haiqing Zhou, Lianfeng Sun   +11 more
doaj   +1 more source

Analog Tensor Processing With Carbon Nanotube In‐Memory Matrix Multiplications for Edge Computer Vision Acceleration

Advanced Materials, EarlyView.
This work prototypes a carbon nanotube‐based analog tensor core that performs in‐memory, parallel visual processing. Integrating non‐volatile memories and compact circuits, the core enables high‐speed analog matrix multiplications and can demonstrate accurate three dimensional (3D) spatial transformation and edge detection. With lightweight design, the
Jingfang Pei, Lekai Song, Songwei Liu, Yingyi Wen, Yaoqiang Zhou, Yang Liu, Pengyu Liu, Wenyu Cui, Xin Lu, Teng Ma, Zegao Wang, Guohua Hu   +11 more
wiley   +1 more source

Emerging frontiers in two-dimensional sliding ferroelectrics

npj 2D Materials and Applications
The emergence of sliding ferroelectricity in 2D van der Waals materials has opened a new paradigm for designing nanoscale nonvolatile memories, where polarization switching is governed by interlayer sliding rather than conventional ion displacement. This
Qing Zhang, Aiqing Fan, Yongshuai Wang, Fan Wu, Lin Li, Hong Meng, Dechao Geng   +6 more
doaj   +1 more source

CHANNEL CAPACITY FORMULATIONS FOR NON-VOLATILE MEMORIES WITH UNREACHABLE LEVELS

Mağallaẗ Al-kūfaẗ Al-handasiyyaẗ
This paper investigates the channel capacity of unreachable memory cells (UMCs), where a cell is deemed -unreachable if it cannot store values beyond a specific state, .
Haider Abdul Hassan Hadi Al Kim
doaj   +1 more source