Results 61 to 70 of about 280,489 (305)

Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories

Journal of Low Power Electronics and Applications, 2021
Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a ...
Mohammad Nasim Imtiaz Khan, Swaroop Ghosh   +1 more
doaj   +1 more source

The Shuttle Nanoelectromechanical Nonvolatile Memory [PDF]

IEEE Transactions on Electron Devices, 2012
Nonvolatile memory (NVM) devices based on storage layers, p-n junctions and transistors, such as FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation, and modeling of a nanoelectromechanical NVM based on the switching of a free electrode between two stable ...
Pott, Vincent, Chua, Geng Li, Vaddi, Ramesh, Tsai, Julius Ming-Lin, Kim, Tony Tae-Hyoung   +4 more
openaire   +2 more sources

Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor

Advanced Functional Materials, EarlyView.
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar, Haider Abbas, Muhammad Rabeel, Honggyun Kim, Ghulam Dastgeer, Muhammad Nasim, Furqan Zahoor, Yawar Abbas, Waqas Ahmad, Deok‐kee Kim   +9 more
wiley   +1 more source

Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors

Advanced Functional Materials, EarlyView.
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang, Mu‐Pai Lee, Jhen‐Dong Tsai, Liang‐Ying Hsieh, Jui‐Yuan Chen, Chun‐Wei Huang, Yen‐Fu Lin, Wen‐Wei Wu   +7 more
wiley   +1 more source

2D Halide Perovskites for High‐Performance Resistive Switching Memory and Artificial Synapse Applications

Advanced Science
Metal halide perovskites (MHPs) are considered as promising candidates in the application of nonvolatile high‐density, low‐cost resistive switching (RS) memories and artificial synapses, resulting from their excellent electronic and optoelectronic ...
Bixin Li, Fei Xia, Bin Du, Shiyang Zhang, Lan Xu, Qiong Su, Dingke Zhang, Junliang Yang   +7 more
doaj   +1 more source

A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

Sensors, 2012
This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process.
Chia-Hua Ho, Fu-Liang Yang, Chien-Chao Huang, Jian-Tai Qiu, Jim-Tong Horng, Chao-Hsin Chien, Tsung-Fan Hsieh, Hao-Yu Chen, Chia-Yi Lin, Min-Cheng Chen   +9 more
doaj   +1 more source

Diketopyrrolopyrrole-Based Dual-Acceptor Copolymers to Realize Tunable Charge Carrier Polarity of Organic Field-Effect Transistors and High-Performance Nonvolatile Ambipolar Flash Memories

, 2020
Incorporation of dual acceptors into the copolymer backbone can effectively improve the electron affinity to achieve ambipolarity for use in specific electronic devices, for example, organic field-effect transistors (OFETs) and flash memories.
Ren, Yi, Matsumoto, Hidetoshi, Kohara, Akihiro, Feron, Krishna, Bottle, Steven E, Bell, John, Chen, Yingqian, Wang, Yang, Michinobu, Tsuyoshi, Liu, Qian, Manzhos, Sergei, Zhou, Ye, Sonar, Prashant   +12 more
core   +1 more source

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

Advanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies, Bin Han, Paolo Samorì   +2 more
wiley   +1 more source

Alternative Memories: Searching for Knowledge, Telling a Story [PDF]

, 2006
Drawing on a research project looking at women’s engagement with the sexual abuse recovery literature this paper explores the role of ‘alternative memories’ (body memories, feeling memories, acting-out memories, imagistic memories, symptoms of abuse ...
Woodiwiss, Jo
core   +4 more sources

A BaTiO3-based flexible ferroelectric capacitor for non-volatile memories

Journal of Materiomics
BaTiO3 (BTO) ferroelectric films, which are renowned for their lead-free compositions, superior stability, and absence of a wake-up effect, are promising candidate materials in the field of non-volatile memories.
Xingpeng Liu, Chunshu Wei, Tangyou Sun, Fabi Zhang, Haiou Li, Linsheng Liu, Ying Peng, Hezhang Li, Min Hong   +8 more
doaj   +1 more source