Results 61 to 70 of about 2,786 (294)

A Model for Multilevel Phase-Change Memories Incorporating Resistance Drift Effects

IEEE Journal of the Electron Devices Society, 2015
Phase change memories are emerging as a most promising technology for future nonvolatile, solid-state, electrical storage. However, to compete effectively in mainstream storage applications, a multilevel cell capability is most desirable.
Rosie A. Cobley, C. D. Wright, Jorge A. Vazquez Diosdado   +2 more
doaj   +1 more source

Balanced Modulation for Nonvolatile Memories [PDF]

, 2012
This paper presents a practical writing/reading scheme in nonvolatile memories, called balanced modulation, for minimizing the asymmetric component of errors. The main idea is to encode data using a balanced error-correcting code.
Bruck, Jehoshua, Jiang, Anxiao (Andrew), Zhou, Hongchao   +2 more
core  

Diketopyrrolopyrrole-Based Dual-Acceptor Copolymers to Realize Tunable Charge Carrier Polarity of Organic Field-Effect Transistors and High-Performance Nonvolatile Ambipolar Flash Memories

, 2020
Incorporation of dual acceptors into the copolymer backbone can effectively improve the electron affinity to achieve ambipolarity for use in specific electronic devices, for example, organic field-effect transistors (OFETs) and flash memories.
Ren, Yi, Matsumoto, Hidetoshi, Kohara, Akihiro, Feron, Krishna, Bottle, Steven E, Bell, John, Chen, Yingqian, Wang, Yang, Michinobu, Tsuyoshi, Liu, Qian, Manzhos, Sergei, Zhou, Ye, Sonar, Prashant   +12 more
core   +1 more source

Oxidized MoS2‐Based Multifunctional Memristive Hardware for Energy‐Efficient mmWave Signal Processing and In‐Memory Matrix Multiplication

Advanced Functional Materials, EarlyView.
Thermally oxidized MoS2‐based radio‐frequency switches enable a multifunctional platform that unifies broadband RF switching and in‐memory computation. The device achieves a cutoff frequency of 33.2 THz with high energy efficiency and supports hardware‐aware signal processing.
Juho Son, Changwoo Pyo, Sungmoon Park, Yoongi Cho, Seungchan Lee, Myungsoo Kim   +5 more
wiley   +1 more source

Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide

Nature Communications
A nonvolatile optical phase shifter is a critical component for enabling the fabrication of programmable photonic integrated circuits on a Si photonics platform, facilitating communication, computing, and sensing. Although ferroelectric materials such as
Kazuma Taki, Naoki Sekine, Kouhei Watanabe, Yuto Miyatake, Tomohiro Akazawa, Hiroya Sakumoto, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka   +8 more
doaj   +1 more source

Characterization and Modeling of Multilevel Analog ReRAM Synapses in the Sky130 Process

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Nonvolatile memory devices play a key role in enabling energy-efficient computing. Among them, analog nonvolatile memories such as resistive random access memory (ReRAM) offer high density and low power compared to conventional digital memories. However,
Irem Didin, Carl Brando, Ching-Yi Lin, Sahil Shah   +3 more
doaj   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories

Computers, 2017
Non-volatile memories (NVMs) offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey
Sparsh Mittal
doaj   +1 more source

Two-dimensional materials memory devices with floating metal gate for neuromorphic applications

Materials Today Advances, 2023
Emerging technologies such as neuromorphic computing and nonvolatile memories based on floating gate field-effect transistors (FETs) hold promise for addressing a wide range of artificial intelligence tasks.
Muhammad Asghar Khan, Sungbin Yim, Shania Rehman, Faisal Ghafoor, Honggyun Kim, Harshada Patil, Muhammad Farooq Khan, Jonghwa Eom   +7 more
doaj   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source