Results 51 to 60 of about 280,489 (305)

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Mesoscopic superconducting memory based on bistable magnetic textures

Physical Review Research, 2022
With the ever-increasing energy need to process big data, the realization of low-power computing technologies, such as superconducting logic and memories, has become a pressing issue.
R. Fermin, N. M. A. Scheinowitz, J. Aarts, K. Lahabi   +3 more
doaj   +1 more source

Evolutionary metal oxide clusters for novel applications: toward high‐density data storage in nonvolatile memories

, 2017
Because of current fabrication limitations, miniaturizing nonvolatile memory devices for managing the explosive increase in big data is challenging. Molecular memories constitute a promising candidate for next‐generation memories because their properties
Han, Su-Ting, Vellaisamy A. L. Roy, Zhou, Ye, Ye Zhou, Xiaoli Chen, Chen, Xiaoli, Roy, Vellaisamy A.L., Su‐Ting Han   +7 more
core   +1 more source

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

Advanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj, Sandeep Sugathan, Jiyoung Kim, Si Joon Kim, Pil‐Ryung Cha   +4 more
wiley   +1 more source

A Model for Multilevel Phase-Change Memories Incorporating Resistance Drift Effects

IEEE Journal of the Electron Devices Society, 2015
Phase change memories are emerging as a most promising technology for future nonvolatile, solid-state, electrical storage. However, to compete effectively in mainstream storage applications, a multilevel cell capability is most desirable.
Rosie A. Cobley, C. D. Wright, Jorge A. Vazquez Diosdado   +2 more
doaj   +1 more source

Balanced Modulation for Nonvolatile Memories [PDF]

, 2012
This paper presents a practical writing/reading scheme in nonvolatile memories, called balanced modulation, for minimizing the asymmetric component of errors. The main idea is to encode data using a balanced error-correcting code.
Bruck, Jehoshua, Jiang, Anxiao (Andrew), Zhou, Hongchao   +2 more
core  

Oxygen‐Vacancy‐Regulated Crystallization and Ferroelectric Phase Stabilization in Hf0.5Zr0.5O2 Thin Films

Advanced Functional Materials, EarlyView.
Temperature‐resolved in situ grazing‐incidence wide‐angle X‐ray scattering reveals that oxygen vacancies actively regulate crystallization in Hf0.5Zr0.5O2 thin films. By decoupling macroscopic strain from intrinsic phase evolution, a vacancy‐lean environment significantly lowers the activation energy barrier for crystallization.
Hyun Woo Jeong, Jaewook Lee, Junseong Seo, Hyojun Choi, Dong Hee Han, Seungjae Heo, Tae‐Yeol Jeon, Yunseok Kim, Younghwan Lee, Min Hyuk Park   +9 more
wiley   +1 more source

Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide

Nature Communications
A nonvolatile optical phase shifter is a critical component for enabling the fabrication of programmable photonic integrated circuits on a Si photonics platform, facilitating communication, computing, and sensing. Although ferroelectric materials such as
Kazuma Taki, Naoki Sekine, Kouhei Watanabe, Yuto Miyatake, Tomohiro Akazawa, Hiroya Sakumoto, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka   +8 more
doaj   +1 more source

Characterization and Modeling of Multilevel Analog ReRAM Synapses in the Sky130 Process

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Nonvolatile memory devices play a key role in enabling energy-efficient computing. Among them, analog nonvolatile memories such as resistive random access memory (ReRAM) offer high density and low power compared to conventional digital memories. However,
Irem Didin, Carl Brando, Ching-Yi Lin, Sahil Shah   +3 more
doaj   +1 more source

A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories

Computers, 2017
Non-volatile memories (NVMs) offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey
Sparsh Mittal
doaj   +1 more source