Results 31 to 40 of about 2,786 (294)

Reproducible resistive switching in nonvolatile organic memories [PDF]

, 2007
Resistive switching in nonvolatile, two terminal organic memories can be due to the presence of a native oxide layer at an aluminum electrode. Reproducible solid state memories can be realized by deliberately adding a thin sputtered Al2O3 layer to ...
René A. J. Janssen, Verbakel, F Frank, de Leeuw, D. M., Leeuw, D M De, Meskers, SCJ Stefan, Buechel, M., Frank Verbakel, Verbakel, F., Büchel, M, Gomes, Henrique L., Meskers, S. C. J., Dago M. de Leeuw, Leeuw, de, D.M., Michael Büchel, Coelle, M., Gomes, H.L., Gomes, HL, Cölle, M, Büchel, M., Janssen, RAJ René, Stefan C. J. Meskers, Michael Cölle, Janssen, R.A.J.; id_orcid, Janssen, R. A. J., Meskers, S.C.J., Janssen, R.A.J., Cölle, M., Henrique L. Gomes   +27 more
core   +1 more source

Recent progress in neuromorphic and memory devices based on graphdiyne

Science and Technology of Advanced Materials, 2023
Graphdiyne (GDY) is an emerging two-dimensional carbon allotrope featuring a direct bandgap and fascinating physical and chemical properties, and it has demonstrated its promising potential in applications of catalysis, energy conversion and storage ...
Zhi-Cheng Zhang, Xu-Dong Chen, Tong-Bu Lu   +2 more
doaj   +1 more source

A cross-layer approach for new reliability-performance trade-offs in MLC NAND flash memories [PDF]

, 2012
In spite of the mature cell structure, the memory controller architecture of Multi-level cell (MLC) NAND Flash memories is evolving fast in an attempt to improve the uncorrected/miscorrected bit error rate (UBER) and to provide a more flexible usage ...
C. Zambelli, P. Olivo, Indaco, Marco, Olivo P., M. Indaco, BERTOZZI, Davide, Zambelli, C., Di Carlo, Stefano, Olivo, P., Bertozzi D., P. Prinetto, D. Bertozzi, M. Fabiano, ZAMBELLI, Cristian, OLIVO, Piero, Fabiano, Michele, Prinetto, Paolo Ernesto, S. Di Carlo, Bertozzi, D., Zambelli C.   +19 more
core   +1 more source

Integration challenges of ferroelectric hafnium oxide based embedded memory (Invited)

, 2022
S.85-95One of the key challenges in the development of embedded memory solutions is to ensure their compatibility to CMOS processing and to reduce the added complexity to a minimum.
Müller, Johannes, Müller, Stefan, Schröder, Uwe, Kolodinski, Sabine, Mulaosmanovic, Halid, Polakowski, Patrick, Paul, Jan, Mikolajick, Thomas, Drescher, Maximilian, Metzger, Joachim, Triyoso, Dina H., Hoffmann, Raik, Slesazeck, Stefan, Erben, Elke, Riedel, Stefan, Flachowsky, Stefan, Binder, Robert, Smith, Elliot   +17 more
core   +1 more source

Nonvolatile ferroelectric domain wall memory [PDF]

Science Advances, 2017
A nonvolatile highly scalable multilevel memory based on ferroelectric domain walls is demonstrated.
Sharma, Pankaj, Zhang, Qi, Sando, Daniel, Lei, Chi Hou, Liu, Yunya, Li, Jiangyu, Nagarajan, Valanoor, Seidel, Jan   +7 more
openaire   +2 more sources

Prospect of Emerging Nonvolatile Memories

, 2004
Conventional nonvolatile memories such as Flash and EEPROM memory have successfully evolved toward high density and low cost. Especially, the market and density of flash memories has grown rapidly which leads semiconductor technology. However, there have
Kinam Kim, Hongsik Jeong
core   +1 more source

Pulse percolation conduction and multi-valued memory

AIP Advances, 2020
We develop a theory of pulse conduction in percolation type materials such as noncrystalline semiconductors and nano-metal compounds. For short voltage pulses, the corresponding electric currents are inversely proportional to the pulse length and exhibit
V. G. Karpov, G. Serpen, Maria Patmiou, Diana Shvydka   +3 more
doaj   +1 more source

Flash-memories in Space Applications: Trends and Challenges [PDF]

, 2009
Nowadays space applications are provided with a processing power absolutely overcoming the one available just a few years ago. Typical mission-critical space system applications include also the issue of solid-state recorder(s).
Caramia, M., Caramia M., Fabiano, Michele, Prinetto, Paolo Ernesto, Di Carlo, Stefano   +4 more
core  

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects

Applied Sciences, 2017
The Internet of Things (IoTs) relies on efficient node memories to process data among sensors, cloud and RF front-end. Both mainstream and emerging memories have been developed to achieve this energy efficiency target.
Hao Cai, Wang Kang, You Wang, Lirida Alves De Barros Naviner, Jun Yang, Weisheng Zhao   +5 more
doaj   +1 more source