Results 31 to 40 of about 280,489 (305)

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects

Applied Sciences, 2017
The Internet of Things (IoTs) relies on efficient node memories to process data among sensors, cloud and RF front-end. Both mainstream and emerging memories have been developed to achieve this energy efficiency target.
Hao Cai, Wang Kang, You Wang, Lirida Alves De Barros Naviner, Jun Yang, Weisheng Zhao   +5 more
doaj   +1 more source

Pulse percolation conduction and multi-valued memory

AIP Advances, 2020
We develop a theory of pulse conduction in percolation type materials such as noncrystalline semiconductors and nano-metal compounds. For short voltage pulses, the corresponding electric currents are inversely proportional to the pulse length and exhibit
V. G. Karpov, G. Serpen, Maria Patmiou, Diana Shvydka   +3 more
doaj   +1 more source

ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES [PDF]

, 2012
Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned
Zambelli, Cristian
core  

Nonvolatile Memories: Present and Future Challenges

, 2014
Due to the rapid development of hand-held electronic devices, the need for high density, low power, high performance SoCs has pushed the well-established embedded memory technologies to their limits.
C. Zambelli, Cristian Zambelli, Aziza, Hassen, Elena Ioana Vatajelu, H. Aziza, ZAMBELLI, Cristian, VATAJELU, ELENA IOANA, Hassen Aziza   +7 more
core   +1 more source

A cross-layer approach for new reliability-performance trade-offs in MLC NAND flash memories [PDF]

, 2012
In spite of the mature cell structure, the memory controller architecture of Multi-level cell (MLC) NAND Flash memories is evolving fast in an attempt to improve the uncorrected/miscorrected bit error rate (UBER) and to provide a more flexible usage ...
C. Zambelli, P. Olivo, Indaco, Marco, Olivo P., M. Indaco, BERTOZZI, Davide, Zambelli, C., Di Carlo, Stefano, Olivo, P., Bertozzi D., P. Prinetto, D. Bertozzi, M. Fabiano, ZAMBELLI, Cristian, OLIVO, Piero, Fabiano, Michele, Prinetto, Paolo Ernesto, S. Di Carlo, Bertozzi, D., Zambelli C.   +19 more
core   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Nanoscale Research Letters, 2017
In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2 dielectric stack demonstrates significant memory effects and excellent reliability ...
Wenchao Xu, Yang Zhang, Zhenjie Tang, Zhengjie Shao, Guofu Zhou, Minghui Qin, Min Zeng, Sujuan Wu, Zhang Zhang, Jinwei Gao, Xubing Lu, Junming Liu   +11 more
doaj   +1 more source

Volatile-Nonvolatile Memory Network for Progressive Image Super-Resolution

IEEE Access, 2021
Single-image super-resolution, i.e., reconstructing a high-resolution image from a low-resolution image, is a critical concern in many computer vision applications. Recent deep learning-based image super-resolution methods employ massive numbers of model
Jun-Ho Choi, Jun-Hyuk Kim, Manri Cheon, Jong-Seok Lee   +3 more
doaj   +1 more source

Bio‐Derived Polyelectrolyte Additive–Induced Interfacial Ion‐Diffusion Barriers for Nonvolatile Organic Artificial Synapses

Advanced Functional Materials, EarlyView.
Sodium alginate regulates interfacial ion transport and retention in electrolyte‐gated synaptic transistors. The carboxylate‐rich polymeric network forms a dynamic interfacial ion‐diffusion barrier that facilitates ion injection during programming while suppressing ion back‐diffusion, thereby stabilizing the electrochemically doped channel state.
Chaeyeon Han, Donghwa Lee, Hyeonse Kim, Hyoik Jang, Sein Chung, Geun Yeol Bae, Eunho Lee   +6 more
wiley   +1 more source