Results 11 to 20 of about 2,786 (294)
Nonvolatile ferroelectric domain wall memory integrated on silicon
Integrating ferroelectric perovskite oxides on Si is highly desired for electronic applications but challenging. Here, the authors show emergent in-plane ferroelectricity and promising nonvolatile memories based on resistive domain wall in BaTiO3/Si.
Haoying Sun +16 more
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An upconverted photonic nonvolatile memory [PDF]
Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with
Ye, Zhou +5 more
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A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET
This paper proposes a new 8T nonvolatile SRAM (nvSRAM) cell employing ULP FinFETs and ferroelectric FinFETs to enable energy-efficient and low-latency store/recall operations.
Wei-Xiang You, Pin Su, Chenming Hu
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Realizing fast nonvolatile floating gate memories is constrained by the slow tunnelling mechanism for charge injection. Here, Chen et al. demonstrate operation speed of 20 ns and power consumption of 10 fJ using graphdiyne oxide as a threshold switching ...
Yuan Li +8 more
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Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories
Non-volatile memories based on the flash architecture with self-assembled III–V quantum dots (SAQDs) used as a floating gate are one of the prospective directions for universal memories.
Demid S. Abramkin, Victor V. Atuchin
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Recent advances in metal nanoparticle‐based floating gate memory
Nonvolatile memory is distinguished for the application in many electronic products due to its excellent charge storage ability. Nevertheless, as the device dimensions are scaled down, floating gate memory encounters various challenges: the increasing ...
Hongye Chen, Ye Zhou, Su‐Ting Han
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The Shuttle Nanoelectromechanical Nonvolatile Memory [PDF]
Nonvolatile memory (NVM) devices based on storage layers, p-n junctions and transistors, such as FLASH, suffer from poor retention at high temperature, high voltage writing, and wear out while cycling. This paper presents the structure, operation, and modeling of a nanoelectromechanical NVM based on the switching of a free electrode between two stable ...
Pott, Vincent +4 more
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In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique.
Frederic Gardes +13 more
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Ferroelectric memories with ultralow‐power‐consumption are attracting a great deal of interest with the ever‐increasing demand for information storage in wearable electronics.
Houfang Liu +13 more
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High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications
One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories.
Chandrasekar Sivakumar +5 more
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