Results 41 to 50 of about 2,786 (294)

Gradient Descent on Multilevel Spin–Orbit Synapses with Tunable Variations

Advanced Intelligent Systems, 2021
Neuromorphic computing using multilevel nonvolatile memories as synapses offers opportunities for future energy‐ and area‐efficient artificial intelligence. Among these memories, artificial synapses based on current‐induced magnetization switching driven
Xiukai Lan, Yi Cao, Xiangyu Liu, Kaijia Xu, Chuan Liu, Houzhi Zheng, Kaiyou Wang   +6 more
doaj   +1 more source

Volatile-Nonvolatile Memory Network for Progressive Image Super-Resolution

IEEE Access, 2021
Single-image super-resolution, i.e., reconstructing a high-resolution image from a low-resolution image, is a critical concern in many computer vision applications. Recent deep learning-based image super-resolution methods employ massive numbers of model
Jun-Ho Choi, Jun-Hyuk Kim, Manri Cheon, Jong-Seok Lee   +3 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Nanoscale Research Letters, 2017
In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2 dielectric stack demonstrates significant memory effects and excellent reliability ...
Wenchao Xu, Yang Zhang, Zhenjie Tang, Zhengjie Shao, Guofu Zhou, Minghui Qin, Min Zeng, Sujuan Wu, Zhang Zhang, Jinwei Gao, Xubing Lu, Junming Liu   +11 more
doaj   +1 more source

Charge-trapping phenomena in HfO2-based FeFET-type nonvolatile memories

, 2022
S.3501-3507Ferroelectric field effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO2) thin films show high potential for future embedded nonvolatile memory applications. However, HfO2 films besides their recently discovered ferroelectric
Müller, Johannes, Müller, Stefan, Schroeder, Uwe, Yurchuk, Ekaterina, Benthum, Ralf van, Pesic, Milan, Paul, Jan, Mikolajick, Thomas   +7 more
core   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Improving the Scalability of Ferroelectric FET Nonvolatile Memories With High-k Spacers

IEEE Journal of the Electron Devices Society, 2022
This paper investigates scaled ferroelectric field-effect transistor (FeFET) nonvolatile memories (NVMs) with high-k spacer device design considering ferroelectric-dielectric random phase variations with TCAD atomistic simulations.
You-Sheng Liu, Pin Su
doaj   +1 more source

Design Solutions For Modular Satellite Architectures [PDF]

, 2010
The cost-effective access to space envisaged by ESA would open a wide range of new opportunities and markets, but is still many years ahead. There is still a lack of devices, circuits, systems which make possible to develop satellites, ground stations ...
SANSOE', Claudio, Leonardo M., Borri, Marco, Reyneri, Leonardo, Claudio Sanso, Claudio Passerone, Maurizio Tranchero, Dante Del, Sansoe, C., Del Corso, Dante, Marco Borri, Stefano Speretta, Tranchero, Maurizio, Speretta, Stefano, Passerone, Claudio   +14 more
core   +1 more source

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

Advanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim, Nahyun Kim, Seok Hee Hong, Ho Jin Lee, Jin Suk Oh, Jae Seong Park, Tae Geun Kim   +6 more
wiley   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source