Results 41 to 50 of about 280,489 (305)

Capacity, Fidelity, and Noise Tolerance of Associative Spatial-Temporal Memories Based on Memristive Neuromorphic Networks

Frontiers in Neuroscience, 2018
We have calculated key characteristics of associative (content-addressable) spatial-temporal memories based on neuromorphic networks with restricted connectivity—“CrossNets.” Such networks may be naturally implemented in nanoelectronic hardware using ...
Dmitri Gavrilov, Dmitri Strukov, Konstantin K. Likharev   +2 more
doaj   +1 more source

Gradient Descent on Multilevel Spin–Orbit Synapses with Tunable Variations

Advanced Intelligent Systems, 2021
Neuromorphic computing using multilevel nonvolatile memories as synapses offers opportunities for future energy‐ and area‐efficient artificial intelligence. Among these memories, artificial synapses based on current‐induced magnetization switching driven
Xiukai Lan, Yi Cao, Xiangyu Liu, Kaijia Xu, Chuan Liu, Houzhi Zheng, Kaiyou Wang   +6 more
doaj   +1 more source

Charge-trapping phenomena in HfO2-based FeFET-type nonvolatile memories

, 2022
S.3501-3507Ferroelectric field effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO2) thin films show high potential for future embedded nonvolatile memory applications. However, HfO2 films besides their recently discovered ferroelectric
Müller, Johannes, Müller, Stefan, Schroeder, Uwe, Yurchuk, Ekaterina, Benthum, Ralf van, Pesic, Milan, Paul, Jan, Mikolajick, Thomas   +7 more
core   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Improving the Scalability of Ferroelectric FET Nonvolatile Memories With High-k Spacers

IEEE Journal of the Electron Devices Society, 2022
This paper investigates scaled ferroelectric field-effect transistor (FeFET) nonvolatile memories (NVMs) with high-k spacer device design considering ferroelectric-dielectric random phase variations with TCAD atomistic simulations.
You-Sheng Liu, Pin Su
doaj   +1 more source

Anchoring effects in the development of false childhood memories [PDF]

, 2009
When people receive descriptions or doctored photos of events that never happened, they often come to remember those events. But if people receive both a description and a doctored photo, does the order in which they receive the information matter?
Nash, Robert Alastair, K. A. Wade, R. A. Nash, Garry, Maryanne, Wade, Kimberley A., Nash, RA, Harper, DN, D. N. Harper, M. Garry, Garry, M, Harper, David N., Wade, KA   +11 more
core   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

A ferroelectric fin diode for robust non-volatile memory

Nature Communications
Among today’s nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their performances.
Guangdi Feng, Qiuxiang Zhu, Xuefeng Liu, Luqiu Chen, Xiaoming Zhao, Jianquan Liu, Shaobing Xiong, Kexiang Shan, Zhenzhong Yang, Qinye Bao, Fangyu Yue, Hui Peng, Rong Huang, Xiaodong Tang, Jie Jiang, Wei Tang, Xiaojun Guo, Jianlu Wang, Anquan Jiang, Brahim Dkhil, Bobo Tian, Junhao Chu, Chungang Duan   +22 more
doaj   +1 more source

Silver Nanowire/Colorless-Polyimide Composite Electrode: Application in Flexible and Transparent Resistive Switching Memory

Scientific Reports, 2017
Improving the performance of resistive switching memories, while providing high transparency and excellent mechanical stability, has been of great interest because of the emerging need for electronic wearable devices.
Seung-Won Yeom, Banseok You, Karam Cho, Hyun Young Jung, Junsu Park, Changhwan Shin, Byeong-Kwon Ju, Jong-Woong Kim   +7 more
doaj   +1 more source

Integration challenges of ferroelectric hafnium oxide based embedded memory (Invited)

, 2022
S.85-95One of the key challenges in the development of embedded memory solutions is to ensure their compatibility to CMOS processing and to reduce the added complexity to a minimum.
Müller, Johannes, Müller, Stefan, Schröder, Uwe, Kolodinski, Sabine, Mulaosmanovic, Halid, Polakowski, Patrick, Paul, Jan, Mikolajick, Thomas, Drescher, Maximilian, Metzger, Joachim, Triyoso, Dina H., Hoffmann, Raik, Slesazeck, Stefan, Erben, Elke, Riedel, Stefan, Flachowsky, Stefan, Binder, Robert, Smith, Elliot   +17 more
core   +1 more source