Results 21 to 30 of about 2,786 (294)
Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor
Reliability of nonvolatile resistive switching devices is the key point for practical applications of next-generation nonvolatile memories. Nowadays, nanostructured organic/inorganic heterojunction composites have gained wide attention due to their ...
Tangyou Sun +9 more
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Volatile semiconductor memory: past, present and future
The significant role and the great influence of microelectronic technology and industry on man’s life have become an indisputable fact. This industry, relying on nanotechnology and its remarkable evolutional and revolutionary progresses, benefits from ...
Mojtaba Jodaki
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Hardware Transactions in Nonvolatile Memory [PDF]
Hardware transactional memory (HTM) implementations already provide a transactional abstraction at HW speed in multi-core systems. The imminent availability of mature byte-addressable, nonvolatile memory (NVM) will provide persistence at the speed of accessing main memory.
Hillel Avni, Eliezer Levy, Avi Mendelson
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EDACs and test integration strategies for NAND flash memories [PDF]
Mission-critical applications usually presents several critical issues: the required level of dependability of the whole mission always implies to address different and contrasting dimensions and to evaluate the tradeoffs among them. A mass-memory device
Piazza, R. +9 more
core +1 more source
Nanoparticle floating-gate transistor memory based on solution-processed ambipolar organic semiconductor [PDF]
Organic thin-film transistor memory based on nano-floating-gate nonvolatile memory was demonstrated by a simple method. The gold nanoparticle that fabricated by thermally evaporated acted as the floating gate. Spin coated PMMA film acted as the tunneling
Sun Sheng, Zhang Shengdong
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Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories
Ferroelectricity is very attractive for nonvolatile memories since it allows non-volatility paired with a field driven switching mechanism enabling a very low-power write operation.
Max, B. +6 more
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Recently, hafnium oxide (HfO2)-based ferroelectric materials have achieved phenomenal success in next-generation nonvolatile memory applications.
Ming-Yang Cha +7 more
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Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories
Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance ...
Mohammad Nasim Imtiaz Khan +5 more
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A Recent Progress of Spintronics Devices for Integrated Circuit Applications
Nonvolatile (NV) memory is a key element for future high-performance and low-power microelectronics. Among the proposed NV memories, spintronics-based ones are particularly attractive for applications, owing to their low-voltage and high-speed operation ...
Tetsuo Endoh, Hiroaki Honjo
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A multilevel nonvolatile magnetoelectric memory
AbstractThe coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade.
Jianxin Shen +6 more
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