Results 21 to 30 of about 280,489 (305)

Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories

Journal of Low Power Electronics and Applications, 2021
Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance ...
Mohammad Nasim Imtiaz Khan, Shivam Bhasin, Bo Liu, Alex Yuan, Anupam Chattopadhyay, Swaroop Ghosh   +5 more
doaj   +1 more source

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS₂ Memory Transistor. [PDF]

Adv Sci (Weinh)
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Jeong Y, Wang H, Tordi P, Hu YC, Tamayo A, Wu B, Ahn HS, Sofer Z, Jung JH, Bonini M, Samorì P.   +10 more
europepmc   +2 more sources

Reproducible resistive switching in nonvolatile organic memories [PDF]

, 2007
Resistive switching in nonvolatile, two terminal organic memories can be due to the presence of a native oxide layer at an aluminum electrode. Reproducible solid state memories can be realized by deliberately adding a thin sputtered Al2O3 layer to ...
René A. J. Janssen, Verbakel, F Frank, de Leeuw, D. M., Leeuw, D M De, Meskers, SCJ Stefan, Buechel, M., Frank Verbakel, Verbakel, F., Büchel, M, Gomes, Henrique L., Meskers, S. C. J., Dago M. de Leeuw, Leeuw, de, D.M., Michael Büchel, Coelle, M., Gomes, H.L., Gomes, HL, Cölle, M, Büchel, M., Janssen, RAJ René, Stefan C. J. Meskers, Michael Cölle, Janssen, R.A.J.; id_orcid, Janssen, R. A. J., Meskers, S.C.J., Janssen, R.A.J., Cölle, M., Henrique L. Gomes   +27 more
core   +2 more sources

Recent progress in neuromorphic and memory devices based on graphdiyne

Science and Technology of Advanced Materials, 2023
Graphdiyne (GDY) is an emerging two-dimensional carbon allotrope featuring a direct bandgap and fascinating physical and chemical properties, and it has demonstrated its promising potential in applications of catalysis, energy conversion and storage ...
Zhi-Cheng Zhang, Xu-Dong Chen, Tong-Bu Lu   +2 more
doaj   +1 more source

Volatile ZrO₂ Antiferroelectric Tunnel Junctions for Rapid, Energy-Efficient Physical Reservoir Computing. [PDF]

Adv Sci (Weinh)
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Kwon T, Jeong M, Hwang SI, Park GH, Kim J, Choi H, Choi HS, Kim DH, Han DH, Park JY, Baek S, Yoon JH, Lee DH, Park MH.   +13 more
europepmc   +2 more sources

Variable-level cells for nonvolatile memories [PDF]

, 2011
For many nonvolatile memories, – including flash memories, phase-change memories, etc., – maximizing the storage capacity is a key challenge. The existing method is to use multilevel cells (MLC) of more and more levels.
Bruck, Jehoshua, Anxiao Jiang, Jehoshua Bruck, Hongchao Zhou, Jiang, Anxiao (Andrew), Zhou, Hongchao   +5 more
core   +1 more source

Photonic-Enabled Energy-Efficient Transparent Neuromorphic Computing Devices: A Review. [PDF]

Adv Sci (Weinh)
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Ghosh S, Lee KB, Lee J, Cho S, Patel M, Li H, Wen Y, Zhou Y, Kim J.   +8 more
europepmc   +2 more sources

Prospect of Emerging Nonvolatile Memories

, 2004
Conventional nonvolatile memories such as Flash and EEPROM memory have successfully evolved toward high density and low cost. Especially, the market and density of flash memories has grown rapidly which leads semiconductor technology. However, there have
Kinam Kim, Hongsik Jeong
core   +1 more source

An upconverted photonic nonvolatile memory [PDF]

Nature Communications, 2014
Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with
Ye, Zhou, Su-Ting, Han, Xian, Chen, Feng, Wang, Yong-Bing, Tang, V A L, Roy   +5 more
openaire   +2 more sources

Flash-memories in Space Applications: Trends and Challenges [PDF]

, 2009
Nowadays space applications are provided with a processing power absolutely overcoming the one available just a few years ago. Typical mission-critical space system applications include also the issue of solid-state recorder(s).
Caramia, M., Caramia M., Fabiano, Michele, Prinetto, Paolo Ernesto, Di Carlo, Stefano   +4 more
core