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Maximizing the storage capacity of nonvolatile memories
2011 Information Theory and Applications Workshop, 2011We propose variable-level cell, a new data representation scheme, for nonvolatile memories (including flash memories, phase-change memories, etc.). We derive its storage capacity, and analyze its performance on rewriting data.
Anxiao Jiang +2 more
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Pulsed tunnel programming of nonvolatile memories
IEEE Transactions on Electron Devices, 2003This paper investigates the use of Fowler-Nordheim tunneling for Flash memories programming looking for a good tradeoff between applied voltage (to relax requirements for on-chip circuitry), program time and oxide stress-induced leakage current (SILC) degradation. Exploiting the results of a recent study of trap dynamics under pulsed tunnel conditions,
IRRERA, Fernanda, RICCO B.
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Variable-level cells for nonvolatile memories
2011 IEEE International Symposium on Information Theory Proceedings, 2011For many nonvolatile memories, - including flash memories, phase-change memories, etc., - maximizing the storage capacity is a key challenge. The existing method is to use multilevel cells (MLC) of more and more levels. The number of levels supported by MLC is seriously constrained by the worst-case performance of cell-programming noise and cell ...
Anxiao Jiang +2 more
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2006
We have briefly reviewed the development of organic memories. Due to the space limitation, there may be much more work on organic memories that has been omitted here. Organic memories are promising, considering their advantages of potential low cost, flexibility, and easy of fabrication, but there is still a distance to go before they are ready for ...
Y. Yang +6 more
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We have briefly reviewed the development of organic memories. Due to the space limitation, there may be much more work on organic memories that has been omitted here. Organic memories are promising, considering their advantages of potential low cost, flexibility, and easy of fabrication, but there is still a distance to go before they are ready for ...
Y. Yang +6 more
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Proceedings of the 2009 International Conference on Computer-Aided Design, 2009
The search for new nonvolatile universal memories is propelled by the need for pushing power-efficient nanocomputing to the next higher level. As a potential contender for the next-generation memory technology of choice, the recently found "the missing fourth circuit element", memristor, has drawn a great deal of research interests.
Yenpo Ho, Garng M. Huang, Peng Li 0001
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The search for new nonvolatile universal memories is propelled by the need for pushing power-efficient nanocomputing to the next higher level. As a potential contender for the next-generation memory technology of choice, the recently found "the missing fourth circuit element", memristor, has drawn a great deal of research interests.
Yenpo Ho, Garng M. Huang, Peng Li 0001
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Nonvolatile Semiconductor Memories
1976Publisher Summary This chapter describes the reprogrammable nonvolatile semiconductor memory devices. In the early period of development of the digital computer, the ferrite material was accepted as a gift of nature because it made the storing of large amounts of information possible and eased the construction of one of the essential parts in the ...
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The Nonvolatile Memory Transformation of Client Storage
Computer, 2013The introduction of solid-state drives in mainstream computing systems is reshaping the client storage landscape. PCI Express is supplanting Serial ATA to deliver higher performance, while novel caching solutions are extending the benefits of nonvolatile memory to a wider segment of users at a more affordable price.
Amber Huffman, Dale Juenemann
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Nonvolatile memory is a broken time machine
Proceedings of the workshop on Memory Systems Performance and Correctness, 2014Energy harvesting enables intermittently powered devices to compute without built-in power. But frequent power failures, combined with nonvolatile memory intended to protect computational state, introduce strange control flow that turns sequential code into unwieldy concurrent code: programs must grapple with their own state from previous interrupted ...
Benjamin Ransford, Brandon Lucia
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Black phosphorus nonvolatile transistor memory
Nanoscale, 2016We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (10(4 ...
Dain, Lee +5 more
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On Endurance of Processing in (Nonvolatile) Memory
Proceedings of the 50th Annual International Symposium on Computer Architecture, 2023Salonik Resch +7 more
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