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Nonvolatile semiconductor memory
Microprocessing and Microprogramming, 1982Abstract The realization of nonvolatile semiconductor memory products has lead to an evolution of denser and more powerful devices. The semiconductor technology utilized affect the device characteristics such as size, power, and speed. The technology also determines what physical mechanisms are used in the detailed memory cells.
Raphael Klein, Wallace E. Tchon
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Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization
Advanced Functional Materials, 2019 Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent ...
Yan Wen, Qiang Zhang, Qikun Huang
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Ferroelectrically Gated Atomically Thin Transition‐Metal Dichalcogenides as Nonvolatile Memory
Advanced Materials, 2016 Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors.
Changhyun Ko, Yeonbae Lee, Yabin Chen
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The zen of nonvolatile memories
Proceedings of the 43rd annual conference on Design automation - DAC '06, 2006Silicon technology based nonvolatile memories (NVM) have achieved widespread adoption for code and data storage applications. In the last 30 years, the traditional floating gate bitcell has been scaled following Moore's law, but recently scaling limits have been encountered which will require alternative solutions after the 65 nm technology node.
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Nonvolatile memories: Present and future challenges
2014 9th International Design and Test Symposium (IDT), 2014Due to the rapid development of hand-held electronic devices, the need for high density, low power, high performance SoCs has pushed the well-established embedded memory technologies to their limits. To overcome the existing memory issues, emerging memory technologies are being developed and implemented. The focus is placed on non-volatile technologies,
Elena I. Vatajelu +2 more
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A concept for nonvolatile memories
Applied Physics Letters, 1997A concept for nonvolatile memories is proposed in which a unique combination of a Schottky junction with tunable barrier height and an adjacent electron potential well is used. A proof-of-concept demonstration is given for such a class of memory devices using ZnCdMgSe/InP heterostructures.
Kai Shum +4 more
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2017
Chapter 8 is the first of three chapters that form a core application for the devices we discussed in Part II, in embedded NVMs. In this chapter, we give an overview of the embedded NVM design using logic CMOS process. We review the basic memory cell design, the programming and erasing methods, and array structure of embedded NVMs.
Yanjun Ma, Edwin Kan
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Chapter 8 is the first of three chapters that form a core application for the devices we discussed in Part II, in embedded NVMs. In this chapter, we give an overview of the embedded NVM design using logic CMOS process. We review the basic memory cell design, the programming and erasing methods, and array structure of embedded NVMs.
Yanjun Ma, Edwin Kan
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Nanostructured perovskites for nonvolatile memory devices
Chemical Society Reviews, 2022This work reviews various nanostructured perovskite-based nonvolatile memory devices and their applications in cutting-edge technologies, paving the way for the development of next-generation high-performance perovskite-based electronics.
Qi Liu +7 more
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ASICON 2001. 2001 4th International Conference on ASIC Proceedings (Cat. No.01TH8549), 2002
The embedded nonvolatile memories (NVM) offer in-system reprogrammability along with low power, noise reduction. more reliable, and reduced system cost while maintain high speed, high density system performance over other NVM including stand-alone flash memory. The extent of market opportunity is driven by product cost.
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The embedded nonvolatile memories (NVM) offer in-system reprogrammability along with low power, noise reduction. more reliable, and reduced system cost while maintain high speed, high density system performance over other NVM including stand-alone flash memory. The extent of market opportunity is driven by product cost.
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Ge-nanodot multilayer nonvolatile memories
Nanotechnology, 20081-5 period multilayers of Ge nanodots (NDs) for nonvolatile memories have been self-assembled by ion beam sputtering deposition of an ultra-small amount of Ge between SiO(2) layers at room temperature without post-annealing. High-resolution transmission electron microscopy demonstrates the existence of Ge ND layers well defined with respect to the SiO ...
Seung Hui, Hong +4 more
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