Results 221 to 230 of about 1,753,751 (305)
Supramolecular helicity meets ferroelectricity: P3HT‐b‐PMMA helical nanowires enable handedness‐specific modulation of remanent polarization in P(VDF‐TrFE) hybrids. This platform demonstrates the first CPL‐addressable ferroelectric PUF, translating molecular chirality into secure digital authentication.
Jung‐Min Ji +7 more
wiley +1 more source
Reconfigurable and nonvolatile photo-pyroelectricity in a ceramic-like biaxial molecular ferroelectric via polarization engineering. [PDF]
Tang L +6 more
europepmc +1 more source
Overview of emerging nonvolatile memory technologies. [PDF]
Meena JS, Sze SM, Chand U, Tseng TY.
europepmc +1 more source
Deterministic Switching‐Path Engineering of CMOS‐Integrated 2D Memristors for Neuromorphic Computing
Deterministic grain‐boundary engineering in 2D MoTe2 defines resistive switching paths, while CMOS transistors impose gate‐tunable current compliance in a monolithically integrated 1T–1 M array. The resulting artificial synapses show stable, linear, and low‐variation analog weight updates, illustrating how materials‐level defect control can be ...
Jihoon Yang +12 more
wiley +1 more source
Dual-function floating-gate memory driver for energy-efficient integrated display-illumination system. [PDF]
Wu H +20 more
europepmc +1 more source
On‐Chip Learning With Crossbar Arrays for Adaptive Edge Intelligence
Memristor crossbar arrays implemented on chip combines memory, computation, and learning. They allow for adapting the neural weights using the incoming sensor data. This architecture reduces data movement leading to low‐latency, energy‐efficient intelligence in edge while being reliability‐aware co‐design across devices, circuits, and algorithms that ...
Alex James
wiley +1 more source
Biomass‐Derived Materials for Organic Electronics
Biomass‐derived materials are organized into four functional classes for organic and flexible electronics, spanning natural polymers, functional polymers, carbon materials, and renewable processing aids. Their opportunities are assessed through device performance, processing demands, and end‐of‐life considerations, highlighting where renewable ...
Zhengran He, Kyeiwaa Asare‐Yeboah
wiley +1 more source
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj +4 more
wiley +1 more source
Room-temperature ferroelectrically switchable quantum geometry in few-layer WTe<sub>2</sub> for complementary in-memory computing. [PDF]
Wang R +12 more
europepmc +1 more source
Temperature‐resolved in situ grazing‐incidence wide‐angle X‐ray scattering reveals that oxygen vacancies actively regulate crystallization in Hf0.5Zr0.5O2 thin films. By decoupling macroscopic strain from intrinsic phase evolution, a vacancy‐lean environment significantly lowers the activation energy barrier for crystallization.
Hyun Woo Jeong +9 more
wiley +1 more source

