Results 201 to 210 of about 8,462 (295)
Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory. [PDF]
ACS Omega, 2019 Sarkar KJ, Pal B, Banerji P.
europepmc +1 more source
Small, EarlyView.Grain‐size‐controlled resistive switching memory arrays based on Sn‐halide perovskite thin films are realized via a photo‐thermochemical process that creates lateral grain‐size gradients. The arrays exhibit domain‐specific volatile threshold switching and short‐term neural dynamics, enabling nonlinear conductance, tunable relaxation, integrate‐and‐fire,
Dohyung Kim +4 more
wiley +1 more source
The Chemical Record, EarlyView.Valve metal oxide nanostructures such as TiO2, Ta2O5, Nb2O5, ZrO2, and HfO2 are emerging as versatile biomedical platforms due to their tunable surface properties, exceptional stability, and inherent biocompatibility. This review highlights their synthesis, physicochemical properties, and biological interactions, addressing their roles in advanced ...
Nina Kummer +11 more
wiley +1 more source
Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor
physica status solidi (a), Volume 223, Issue 11, 10 June 2026.We introduce a diamond optically gated field effect transistor (DOGFET) which combines high‐speed high‐power operation with exotic single transistor memory. The transistor uses deep level donor type nitrogen traps in type 1b diamond that are optically excited to enable electrostatic gating of the device.
Soumak Nandi +9 more
wiley +1 more source
Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations. [PDF]
Nat Commun, 2016 Kim WY +9 more
europepmc +1 more source
2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics
Advanced Functional Materials, Volume 36, Issue 44, 1 June 2026.2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit +5 more
wiley +1 more source
Advanced Functional Materials, Volume 36, Issue 45, 5 June 2026.This study demonstrates an artificial polymodal nociceptor whose firing threshold is actively modulated by temperature. A volatile TiN/TiOx/ZnO/TiOx/ITO memristor shows interfacial ion–driven resistive switching and membrane‐potential‐like dynamics, enabling temperature‐dependent nociceptive behavior.
Chanmin Hwang +3 more
wiley +1 more source
Overview of emerging nonvolatile memory technologies. [PDF]
Nanoscale Res Lett, 2014 Meena JS, Sze SM, Chand U, Tseng TY.
europepmc +1 more source
Increased Endurance of Nonvolatile Photonics Enabled by Nanostructured Phase‐Change Materials
Advanced Materials, Volume 38, Issue 31, 2 June 2026.Tapered and segmented islands of the phase‐change material (PCM) antimony selenide (Sb2Se3) integrated on silicon microring resonators enable ultra‐low‐loss, high‐endurance, non‐volatile photonic tuning. The nanostructured PCM design suppresses interfacial scattering and thermal stress, achieving record endurance over 100 million electrical switching ...
Jayita Dutta +10 more
wiley +1 more source