Results 211 to 220 of about 8,462 (295)

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

Advanced Materials Interfaces, Volume 13, Issue 11, 9 June 2026.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

Diffusion–Model–Driven Discovery of Ferroelectrics for Photocurrent Applications

Advanced Science, Volume 13, Issue 31, 4 June 2026.
We developed a diffusion model–based generative AI and high‐throughput screening framework that accelerates the discovery of photovoltaic ferroelectrics. By coupling AI driven crystal generation with machine learning and DFT screening, we identified Ca3P2 and LiCdP as new ferroelectric materials exhibiting strong polarization, feasible switching ...
Byung Chul Yeo, Hyun‐Jae Lee, Sungwoo Kang, Jung‐Hoon Lee   +3 more
wiley   +1 more source

Current‐Driven Nonreciprocal Response of Nonequilibrium Skyrmions

Advanced Science, Volume 13, Issue 31, 4 June 2026.
A skyrmion holds great promise for spintronic applications owing to its intrinsic topological stability and high mobility under ultra‐low current excitation. Here, by means of in situ electron microscopy, we demonstrate a skyrmion diode effect and the associated current‐driven nonreciprocal skyrmion dynamics in a designed FeGe‐based microdevice.
Xiuzhen Yu, Soju Furuta, Xichao Zhang, Yi‐Ling Chiew, Kiyomi Nakajima, Kosuke Karube, Naoya Kanazawa, Yasujiro Taguchi, Yoshinori Tokura, Masahito Mochizuki, Fumitaka Kagawa   +10 more
wiley   +1 more source

Ta₂O₅-TiO₂ Composite Charge-trapping Dielectric for the Application of the Nonvolatile Memory. [PDF]

Sci Rep, 2017
Wei CY, Shen B, Ding P, Han P, Li AD, Xia YD, Xu B, Yin J, Liu ZG.   +8 more
europepmc   +1 more source

Deep Sight of Temperature‐Dependent Wake‐Up Effect of Hf0.5Zr0.5O2 Capacitors and Characterization

Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.
ABSTRACT Doped HfO2 ferroelectrics have attracted significant attention owing to their compatibility with CMOS processes in memory applications. The evolution of phases in doped HfO2 films during the wake‐up process remains a subject of ongoing interest.
Zichong Zhang, Rui Su, Wenxi Zhou, Xiaolong Jing, Tonghui Lin, Yifan Yang, Bobo Tian, Xiangshui Miao, Xingsheng Wang   +8 more
wiley   +1 more source

Crystallographic Analysis of a Nonvolatile HZO Phase Shifter Integrated on a Si3N4 Waveguide

Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.
The nonvolatile resonance shift of an in‐plane HZO phase shifter integrated on a Si3N4 ring resonator is demonstrated through optical measurements under lateral bias. Combining 4D‐STEM with DFT simulations reveals phase redistribution and strain‐induced index changes as the microscopic origin of a nonvolatile photonic modulation.
Minsik Kong, Min Kang, Chanwoo Jeong, Kyuho Kim, Sunkyu Yu, Soo‐Yeon Lee   +5 more
wiley   +1 more source

Electrically and Magnetically Tunable Charge–Density–Wave Transport in Quasi‐2D h‐BN/1T‐TaS2 Field Effect Devices

Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.
Perpendicular electric and magnetic fields are used to control charge‐density‐wave (CDW) domain dynamics in quasi‐two‐dimensional h‐BN/1T‐TaS2 field‐effect devices. Electrical gating produces a non‐monotonic modulation of the CDW depinning threshold — behavior distinct from quasi‐one‐dimensional CDW systems.
Jonas O. Brown, Maedeh Taheri, Nicholas R. Sesing, Tina T. Salguero, Alexander A. Balandin   +4 more
wiley   +1 more source

Soft Ferroelectrics in One Dimension: Ferroelectric Columnar Liquid Crystals

ChemPlusChem, Volume 91, Issue 6, June 2026.
Helical ferroelectric columnar liquid crystals (FCLCs) confine bistable axial polarization within individual columns. An electric field reversibly flips the macrodipole, enabling two nonvolatile states readable as “0” and “1.” This Cconcept highlights supramolecular locking and helical architectures that deliver genuine switching and long‐lived zero ...
Seongwon Park, Byoung‐Ki Cho
wiley   +1 more source

Excellent low-voltage operating flexible ferroelectric organic transistor nonvolatile memory with a sandwiching ultrathin ferroelectric film. [PDF]

Sci Rep, 2017
Xu T, Xiang L, Xu M, Xie W, Wang W.
europepmc   +1 more source

Investigating the Ferroelectric Potential Landscape of 3R‐MoS2 Through Optical Measurements

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 6, June 2026.
3R‐stacked MoS2 contains mesoscopic ferroelectric domains that can be mapped using Kelvin force microscopy. However, this technique is rather slow and requires electrically conductive substrates. We demonstrate that room‐temperature Raman and photoluminescence spectroscopy also give similar insight into the ferroelectric stacking order and allow for ...
Jan‐Niklas Heidkamp, Johannes Schwandt‐Krause, Swarup Deb, Kenji Watanabe, Takashi Taniguchi, Zdeněk Sofer, Rico Schwartz, Tobias Korn   +7 more
wiley   +1 more source