Results 231 to 240 of about 1,753,751 (305)

Reconfigurable Selector-Only Memory (SOM) for Scalable Neuromorphic Computing. [PDF]

Adv Sci (Weinh)
Wen JY, Yi CQ, Zhang YR, Wang BH, Liu ZX, Zhou CY, Tong H, Miao XS.   +7 more
europepmc   +1 more source

Reconfigurable Ferroelectric‐Like Two‐Dimensional Electron Gas at Room Temperature

Advanced Materials, Volume 38, Issue 52, 16 September 2026.
We demonstrate the realization of a novel ferroelectric‐like two‐dimensional electron gas (2DEG) based on the epitaxial interface between SrO‐terminate SrTiO3 and ferroeletric KNb0.5Na0.5O3${\rm KNb}_{0.5}{\rm Na}_{0.5}{\rm O}_3$ thin films. We show nonvolatile control of the transport properties enabling spatially reconfigurable devices in which ...
Martando Rath, Yu Chen, Daniela Stornaiuolo, Aravind Raji, Alexandre Gloter, Antonio Cassinese, Andrea Rubano, Alessia Sambri, Domenico Paparo, Emiliano Di Gennaro, Jérôme Lecourt, Wilfrid Prellier, Francesco Rosa, Nicholas B. Brookes, Giacomo Ghiringhelli, Daniele Preziosi, Marco Salluzzo   +16 more
wiley   +1 more source

High‐Mobility and Reliability Ultra‐Thin‐Channel Oxide Semiconductor Field‐Effect Transistors for Chip‐Interconnect‐Embedded Logic and Ferroelectric Memory

Advanced Materials, Volume 38, Issue 52, 16 September 2026.
BEOL‐compatible bilayer heterojunction oxide channel dual‐mode, memory‐logic ferroelectric transistor is fabricated to address long‐standing challenges of mobility and threshold voltage trade‐off by suppressing interfacial defects. This approach not only advances oxide semiconductors toward reliable high‐performance BEOL transistors but also opens new ...
Chun‐Kuei Chen, Sonu Hooda, Maheswari Sivan, Quanzhen Wan, Marco A. Villena, Bastien Beltrando, Zefeng Xu, Zihang Fang, Evgeny Zamburg, Juan B. Roldán, Luca Larcher, Gaurav Thareja, Aaron Voon‐Yew Thean   +12 more
wiley   +1 more source

Applied spintronics: From spin transport to spin-charge interconversion and emerging devices. [PDF]

Sci Adv
Bibes M, Gomonay O, Kuschel T, Sinova J, Weiler M, Fukami S, Kläui M.   +6 more
europepmc   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Beyond Intrinsic Limits: Polarization-Sensitive Carrier Dynamics Amplify Subtle Intrinsic Optical Anisotropy into Giant Linear Dichroism. [PDF]

Adv Mater
Zeng D, Zhang S, Shen X, Gao P, Li R, Hu W.   +5 more
europepmc   +1 more source

CMOS-Compatible AlScN Memristor on Silicon Exhibiting Short-Term Memory for Reservoir Computing. [PDF]

Biomimetics (Basel)
Park W, Chae H, Rasheed M, Kim S.
europepmc   +1 more source

Two-Dimensional Indium Selenide for Next-Generation Electronics. [PDF]

Int J Mol Sci
Lee D.
europepmc   +1 more source

Grain Boundary Enabled Diamond Memristor. [PDF]

Adv Mater
Sun G, Li X, Huang W, Han Y, Yan W, Wang X, Guo Y, Chen D, Cheng S, Shan C.   +9 more
europepmc   +1 more source

Analysis and Applications of Neuromorphic Memristors in Artificial Intelligence Computing. [PDF]

Nanomicro Lett
Wang J, Chen Q, Zhang J, Meng J, Wang T.
europepmc   +1 more source