Results 231 to 240 of about 8,462 (295)

Interferometric Evidence of Nonvolatile Anomalous Phase Shifts in Exchange-Spin-Split Josephson Supercurrent Diodes. [PDF]

ACS Nano
Jeon KR, Kim JK, Yoon J, Jeon JC, Han H, Cottet A, Kontos T, Parkin SSP.   +7 more
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Coupled polarization dynamics and charge tunneling enable reconfigurable heterojunctions. [PDF]

Nat Commun
Li C, Yu T, Zhang Z, Deng Q, Hui F, Wang Z, Lanza M, Sun L.   +7 more
europepmc   +1 more source

CMOS-Compatible Fabrication Module for Sub-100 nm TiN and TaN Pillar Electrodes for Carbon Nanotube Test Structures. [PDF]

Nanomaterials (Basel)
Chen G, Fujii T, Yamada T, Hata K.
europepmc   +1 more source

Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack. [PDF]

Nano Lett
Fernandes L, Wodzro S, Venkatesan P, Ravikumar P, Lee MY, Shon M, Chakraborty D, Song T, Kang S, Soliman S, Tian M, Yeager J, Adler J, Chen J, Wang Z, Wolfe D, Yu S, Padovani A, Datta S, Ray B, Khan A.   +20 more
europepmc   +1 more source

Symmetry-locked six-state control of altermagnetism via sliding ferroelectricity. [PDF]

Sci Adv
Sun W, Wang W, Yang C, Huang S, Cheng Z.
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Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors. [PDF]

ACS Appl Mater Interfaces
Das A, Paul A, Tewari M, Lou ZF, Chang YT, Senapati A, Kumar G, Raffel Y, Useinov A, Tumilty N, Wu TL, Lashkare S, Agarwal T, Lee MH, De S.   +14 more
europepmc   +1 more source

Reply to: Bias-induced electrostatic magnetoresistance in ferromagnet/chiral systems. [PDF]

Nat Commun
Zhao Y, Zhang K, Xiao J, Sun K, Yan B.
europepmc   +1 more source

Twisted atomic magnetic tunnel junctions with multiple nonvolatile states. [PDF]

Nat Commun
Chen Y, Samanta K, Healey AJ, Fang C, Zhang H, Shahed NA, Broadway DA, Ernst A, Tsymbal EY, Parkin SSP.   +9 more
europepmc   +1 more source

An all-in-one electrochromic neuromorphic display. [PDF]

Natl Sci Rev
Ma W.
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In-memory computing with emerging nonvolatile memory devices

Science China Information Sciences, 2021
The von Neumann bottleneck and memory wall have posed fundamental limitations in latency and energy consumption of modern computers based on von Neumann architecture. In-memory computing represents a radical shift in the computer architecture that can address such problems by merging computing functions within the memory itself.
Caidie Cheng, Pek Jun Tiw, Yimao Cai, Xiaoqin Yan, Yuchao Yang 0001, Ru Huang 0001   +5 more
openaire   +1 more source