Results 201 to 210 of about 368,571 (256)

Normally-Off Mesfet Analogue Circuits

16th European Microwave Conference, 1986, 1986
A very small (0.04 mm2) monolithic DC to 2GHz, input/output matched, amplifier using enhancement mode GaAs MESFET's has been realized, to demonstrate the analog circuits capability of this type of transistor. The gain of the amplifier is 12dB, its noise factor is 2dB.
V. Pauker, P. Dautriche, A. Giakoumis, A. Kazeminejad   +3 more
openaire   +1 more source

Threshold voltages of normally off MESFET's

IEEE Transactions on Electron Devices, 1972
The threshold voltage of "normally off" Si-MESFET's for simple dc-coupled circuits is defined and computed with a two-dimensional device model, taking into account carrier velocity saturation and diffusion. The influence of the main parameters, gate length, conducting-layer thickness, and doping is investigated outside the range of Shockley's equations.
W. Jutzi, M. Reiser
openaire   +1 more source

Spin-RAM for Normally-Off Computer

2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding, 2011
Spin-RAM technologies for operation speed faster than 30 ns, memory capacity larger than 1 Gbits and practically infinite read/write endurance have been developed by using magnetic tunnel junctions with perpendicular magnetization layers. Combination of Spin-RAM and power-gating technology will enable ultra low power computer called Normally-Off ...
K. Ando, K. Yakushiji, H. Kubota, A. Fukushima, S. Yuasa, T. Kai, T. Kishi, N. Shimomura, H. Aikawa, M. Yoshikawa, T. Nagase, K. Nishiyama, E. Kitagawa, T. Daibou, M. Amano, S. Takahashi, M. Nakayama, S. Ikegawa, M. Nagamine, J. Ozeki, D. Watanabe, H. Yoda, T. Nozaki, Y. Suzuki, M. Oogane, S. Mizukami, Y. Ando, T. Miyazaki, Y. Nakatani   +28 more
openaire   +1 more source

Normally-off computing for IoT systems

2015 International SoC Design Conference (ISOCC), 2015
It is important to thoroughly reduce energy consumption for IoT systems. Normally-Off is a way of computing which aggressively powers off components of computer systems when they need not to operate. Recently, new non-volatile memories (NVMs) have appeared. We introduce normally-off computing using these NVMs.
Takashi Nakada, Toru Shimizu, Hiroshi Nakamura   +2 more
openaire   +1 more source

Normally-off technologies for healthcare appliance

2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC), 2014
Battery mass and power consumption of wearable system must be reduced because the key factors affecting wearable system usability are miniaturization and weight reduction. This report describes a wearable biosignal monitoring system using normally-off technologies to minimize the power consumption.
Shintaro Izumi, Hiroshi Kawaguchi, Masahiko Yoshimoto, Yoshikazu Fujimori   +3 more
openaire   +1 more source

Nanofabrication of normally-off GaN vertical nanowire MESFETs

Nanotechnology, 2019
Gallium nitride (GaN) all-around (wrap) gate vertical nanowire (V-NW) field-effect transistors (FETs) are favorable for enhanced electrostatic control of the gate and selectivity for normally on/off operation. In this work, GaN V-NW FETs with a Schottky barrier gate (V-NW MESFETs), were fabricated for the first time.
G Doundoulakis, A Adikimenakis, A Stavrinidis, K Tsagaraki, M Androulidaki, F Iacovella, G Deligeorgis, G Konstantinidis, A Georgakilas   +8 more
openaire   +2 more sources

Normally-off technology at Philips microwave

III-Vs Review, 1991
Abstract Philips Microwave GaAs Foundry and ASIC Design Centre at Limeil, near Paris, has a calibrated 0.7μm ERO7AD process which is particularly well suited to low dc power analogue and digital ICs. In a clear demonstration of the capability of the process, new structures have been used to improve the performance of a family of low noise amplifiers.
D. Meignant, P. Philippe, N. Caglio
openaire   +1 more source

Modeling of GaN-Based Normally-Off FinFET

IEEE Electron Device Letters, 2014
In this letter, a macromodel for normally-off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed. AlGaN/GaN-based FinFET devices have improved gate control on the channel due to additional sidewall gates compared with planar structures, but device characteristics exhibit strong nonlinear ...
Chandan Yadav, Pragya Kushwaha, Sourabh Khandelwal, Juan Pablo Duarte, Yogesh Singh Chauhan, Chenming Hu   +5 more
openaire   +1 more source

Computers that are normally off

Physics Today, 2014
Nonvolatile, spin-transfer torque components could greatly reduce the need for standby power when computers are idle.
openaire   +1 more source