An enhanced two-dimensional hole gas (2DHG) C–H diamond with positive surface charge model for advanced normally-off MOSFET devices [PDF]
Scientific Reports, 2022 Though the complementary power field effect transistors (FETs), e.g., metal–oxide–semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide bandgap material ...
Reem Alhasani +6 more
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Prospects and Development of Vertical Normally-off JFETs in SiC
Journal of Telecommunications and Information Technology, 2023 This paper reviews the prospects of normally-off (N-off) JFET switch in SiC. The potential of selected vertical JFET concepts and all-JFET cascode solutions for N-off operation is analyzed using simulations.
Mietek Bakowski
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Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage [PDF]
Micromachines, 2021 In this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-FP ...
Xiaoyu Xia, Zhiyou Guo, Huiqing Sun
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A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation [PDF]
Membranes, 2021 This study presents an innovative, low-cost, mass-manufacturable ion implantation technique for converting thin film normally on AlGaN/GaN devices into normally off ones.
Gene Sheu +4 more
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Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors [PDF]
Micromachines, 2022 We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate ...
Idriss Abid +4 more
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High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate [PDF]
Micromachines, 2021 Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity.
Yu-Chun Huang +6 more
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Advanced Electronic Materials, 2023 Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafers and the ...
Xiaohua Zhu +11 more
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Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing [PDF]
Nanomaterials, 2023 Memristive logic-in-memory circuits can provide energy- and cost-efficient computing, which is essential for artificial intelligence-based applications in the coming Internet-of-things era.
Yeongkwon Kim +2 more
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Recent advances in diamond MOSFETs with normally off characteristics
Functional DiamondDiamond has superior physical and electronic properties and it is regarded as an ultimate material of power-electronics applications. Numerous studies have been focusing on the diamond-based power devices, especially on diamond metal-oxide-semiconductor ...
Mingkun Li +7 more
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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors. [PDF]
Materials (Basel), 2019 Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world.
Roccaforte F +3 more
europepmc +2 more sources