Results 221 to 230 of about 2,989,727 (250)

Normally-Off Ga2O3 MOSFETs With Unintentionally Nitrogen-Doped Channel Layer Grown by Plasma-Assisted Molecular Beam Epitaxy

IEEE Electron Device Letters, 2019
We found that nitrogen (N) and silicon (Si) were unintentionally co-doped in Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE), and that the ratio between N and Si could be controlled by O/Ga flux ratio during the growth.
T. Kamimura, Y. Nakata, M. Wong, M. Higashiwaki   +3 more
semanticscholar   +1 more source

Switching Transient Analysis for Normally-off GaN Transistor With p-GaN Gate in a Phase-Leg Circuit

IEEE transactions on power electronics, 2019
Commercially available normally-off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate region, there exist a Schottky junction (between gate electrode and the p-GaN layer) and a p-GaN ...
Ruiliang Xie, Xu Yang, G. Xu, Jin Wei, Yuru Wang, Hanxing Wang, Mofan Tian, Feng Zhang, Wenjie Chen, Laili Wang, K. J. Chen   +10 more
semanticscholar   +1 more source

Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation

IEEE Electron Device Letters, 2019
Diamond is a promising material for power applications owing to its excellent physical properties. Two-dimensional hole gas (2DHG) diamond metal–oxide–semiconductor field-effect transistors (MOSFETs) with hydrogen-terminated (C-H) channel have high ...
Nobutaka Oi, T. Kudo, M. Inaba, S. Okubo, S. Onoda, A. Hiraiwa, H. Kawarada   +6 more
semanticscholar   +1 more source

Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrOₓ Charge Trapping Layer

IEEE Transactions on Electron Devices, 2021
Yutao Cai, Yuanlei Zhang, Ye Liang, I. Mitrovic, H. Wen, Wen Liu, Cezhou Zhao   +6 more
semanticscholar   +1 more source

Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors

Applied Physics Letters, 2018
In this letter, gate leakage mechanisms in different gate contact normally off p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) have been studied by the temperature-dependent current-voltage (IG-VG) measurement. It is found that two-dimensional
Ning Xu, Ronghui Hao, Fu Chen, Xiaodong Zhang, Hui Zhang, Peipei Zhang, Xiaoyu Ding, Liang Song, Guohao Yu, K. Cheng, Yong Cai, Baoshun Zhang   +11 more
semanticscholar   +1 more source

C-Si Interface on Sio2/(111) Diamond P-Mosfets with High Mobility and Excellent Normally-Off Operation

Social Science Research Network, 2022
Xiaohua Zhu, T. Bi, Xiaolu Yuan, Yuhao Chang, Runming Zhang, Yu Fu, Juping Tu, Yabo Huang, Jinlong Liu, Chengming Li, H. Kawarada   +10 more
semanticscholar   +1 more source

Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate

Superlattices and Microstructures, 2021
Jialin Li, Yi’an Yin, Ni Zeng, Fengbo Liao, Mengxiao Lian, Xichen Zhang, Keming Zhang, Jingbo Li   +7 more
semanticscholar   +1 more source

Structural basis for Cas9 off-target activity

Cell, 2022
Martin Jinek
exaly  

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Journal of Electronic Materials, 2020
Namjee Kim, Jingshu Yu, Weijia Zhang, Rophina Li, Mengqi Wang, W. Ng   +5 more
semanticscholar   +1 more source

Efficacy of catheter-based renal denervation in the absence of antihypertensive medications (SPYRAL HTN-OFF MED Pivotal): a multicentre, randomised, sham-controlled trial

Lancet, The, 2020
Kazuomi Kario, David E Kandzari, Felix Mahfoud   +2 more
exaly