Results 31 to 40 of about 2,989,727 (250)

Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications

IEEE Journal of the Electron Devices Society, 2020
Recess processes for the fabrication of normally-off GaN HEMTs generally compromise devices’ on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with a threshold voltage of 0.24 V is realized by local control of two ...
Wei-Chih Cheng, Fanming Zeng, Minghao He, Qing Wang, Mansun Chan, Hongyu Yu   +5 more
doaj   +1 more source

Normally-OFF Diamond Reverse Blocking MESFET

IEEE Transactions on Electron Devices, 2021
Schottky contacts have been used to fabricate normally- OFF lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond.
J. Cañas, A. Pakpour-Tabrizi, T. Trajkovic, F. Udrea, D. Eon, E. Gheeraert, R. Jackman   +6 more
semanticscholar   +1 more source

Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage

IEEE Access, 2023
Third quadrant operation is vital for power applications such as synchronous DC-DC converters and inverters, which require a low drain-source voltage drop to reduce conduction losses.
Dai-Jie Lin, Chih-Kang Chang, Kuntal Barman, Yu-Chuan Chu, William Shih, Jian-Jang Huang   +5 more
doaj   +1 more source

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society, 2018
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan   +6 more
doaj   +1 more source

High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFET

IEEE Journal of the Electron Devices Society, 2017
High temperature characteristics of bipolar-mode operation of normally-off diamond junction field-effect transistors were investigated up to 573 K. As an important factor, the current gain depending on the gate current was analyzed with a theoretical ...
Takayuki Iwasaki, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, Mutsuko Hatano   +6 more
doaj   +1 more source

Design, Simulation and Optimization of an Enhanced Vertical GaN Nanowire Transistor on Silicon Substrate for Power Electronic Applications

IEEE Access, 2023
A new vertical transistor structure based on GaN nanowire is designed and optimized using the TCAD-Santaurus tool with an electrothermal model. The studied structure with quasi-1D drift region is adapted to GaN nanowires synthesized with the bottom-up ...
Mohammed Benjelloun, Zahraa Zaidan, Ali Soltani, Noelle Gogneau, Denis Morris, Jean-Christophe Harmand, Hassan Maher Maher   +6 more
doaj   +1 more source

Experimental Demonstration of a Nonvolatile SRAM With Ferroelectric HfO₂ Capacitor for Normally Off Application

IEEE Journal of the Electron Devices Society, 2018
In order to realize ultralow power Internet-of-Things (IoT) edge devices, standby leakage current must be suppressed because activity of IoT device is very small in an intermittent mode.
Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, Toshiro Hiramoto   +3 more
doaj   +1 more source

Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs

IEEE Journal of the Electron Devices Society, 2020
A novel lattice matched double barrier Al0.72In0.16Ga0.12N/Al0.18In0.04Ga0.78N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by solving a set of thermodynamic transport equations.
Niraj Man Shrestha, Yiming Li, Chao-Hsuan Chen, Indraneel Sanyal, Jenn-Hawn Tarng, Jen-Inn Chyi, Seiji Samukawa   +6 more
doaj   +1 more source

Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications

Electronics Letters, 2021
Here, a gated‐anode diode (GAD) is proposed where an anode electrode is formed by connecting a gate electrode and an ohmic electrode of a normally‐off GaN HEMT for a 5.8 GHz rectenna.
Hidemasa Takahashi, Yuji Ando, Yoichi Tsuchiya, Akio Wakejima, Hiroaki Hayashi, Eiji Yagyu, Koichi Kikkawa, Naoki Sakai, Kenji Itoh, Jun Suda   +9 more
doaj   +1 more source

Simulation of Electrical Characteristics on Inhomogeneous Strains in Normally-off HEMTs with p-GaN Gate [PDF]

MATEC Web of Conferences, 2020
Strain is one of the important factors affecting the two-dimensional electron gas (2DEG) transform in AlGaN/GaN material based high electron mobility transistors (HEMTs) by polarization effects.
Zhou Jing, Chen Hongjun, Wang Yang, Long Xingming   +3 more
doaj   +1 more source