Results 1 to 10 of about 7,990 (195)
On-State Voltage Drop Analytical Model for 4H-SiC Trench IGBTs
Crystals, 2022 In this paper, a model for the forward voltage drop in a 4H-SiC trench IGBT is developed. The analytical model is based on the 4H-SiC trench MOSFET voltage model and the hole-carrier concentration profile in the N-drift region for a conventional 4H-SiC ...
Yanjuan Liu, Dezhen Jia, Junpeng Fang
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IEEE Open Journal of Power Electronics, 2023 This letter proposes an on-state drain-source voltage (${V}_{{\rm{ds,on}}}$) measurement circuit for SiC MOSFETs. The proposed circuit effectively solves the problem of inconsistent diode volt-ampere characteristics through an additional current source ...
Hui Meng +7 more
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A Converter-Level on-State Voltage Measurement Method for Power Semiconductor Devices
IEEE Transactions on Power Electronics, 2021 This letter proposes a converter-level method for measuring the on-state voltages of all power semiconductors in a single-phase inverter by using a single circuit only. The proposed circuit distinguishes itself by connecting to the middle-point of each phase-leg, instead of the two power-terminals of individual devices as conventional methods do.
Yingzhou Peng, Yanfeng Shen, Huai Wang
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Sensors, 2021 Power electronic devices are essential components of high-capacity industrial converters. Accurate assessment of their power loss, including switching loss and conduction loss, is essential to improving electrothermal stability.
Qiuping Yu +4 more
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Micromachines, 2021 Breakdown voltage (BV), on-state voltage (Von), static latch-up voltage (Vlu), static latch-up current density (Jlu), and threshold voltage (Vth), etc., are critical static characteristic parameters of an IGBT for researchers.
Qing Yao +9 more
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A Simplified On-State Voltage Measurement Circuit for Power Semiconductor Devices
IEEE Transactions on Power Electronics, 2021 This letter proposes a simplified converter-level on-state voltage measurement circuit for power semiconductor devices, without an external power supply and self-power circuit. It has a reduced component count and circuit complexity, and retains the plug-and-play feature, comparable measurement accuracy, and dynamic response as recently reported ...
Yingzhou Peng, Huai Wang
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Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers
Micromachines, 2021 In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off.
Ki Yeong Kim +3 more
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GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance
Micromachines, 2023 A novel VDMOS with the GaN/Si heterojunction (GaN/Si VDMOS) is proposed in this letter to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp) by Breakdown Point Transfer (BPT), which transfers the breakdown point from the high ...
Xin Yang, Baoxing Duan, Yintang Yang
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A Novel Shielded IGBT (SIGBT) With Integrated Diodes
IEEE Journal of the Electron Devices Society, 2020 A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely ...
Rongxin Chen +3 more
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Energies, 2023 The introduction of a large number of photovoltaic systems to distribution systems has increased the complexity of the voltage profile. It is thus necessary to manage voltage at a higher system level.
Riku Akasaka +4 more
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