Results 161 to 170 of about 9,038,775 (251)

Terahertz Channel Modeling, Estimation and Localization in RIS‐Assisted Systems

Advanced Electronic Materials, EarlyView.
Reconfigurable intelligent surfaces have become a recent intensive research focus. Based on practical applications, channel strategies for RIS‐assisted terahertz wireless communication systems are categorized into three different types: channel modeling, channel estimation, and channel localization.
Hongjing Wang, Weipeng Wang, Xuan Cong, Shiyu Wang, Gao Li, Sen Gong, Lin Huang, Hongxin Zeng, Yaxin Zhang, Ziqiang Yang   +9 more
wiley   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

On the Role of Preprocessing and Memristor Dynamics in Reservoir Computing for Image Classification

Advanced Electronic Materials, EarlyView.
ABSTRACT Reservoir computing (RC) is an emerging recurrent neural network architecture that has attracted growing attention for its low training cost and modest hardware requirements. Memristor‐based circuits are particularly promising for RC, as their intrinsic dynamics can reduce network size and parameter overhead in tasks such as time‐series ...
Rishona Daniels, Duna Wattad, Ronny Ronen, David Saad, Shahar Kvatinsky   +4 more
wiley   +1 more source

Experimental Demonstration of Temporally Aware Fault‐Tolerant Sensor Fusion Using Memristive Associative Learning

Advanced Electronic Materials, EarlyView.
In dynamic driving scenarios, the proposed approach ensures only temporally aligned sensor inputs to make driving decisions, preventing false activations. By enabling selective hardware‐level learning, it achieves fast, reliable responses under noisy conditions.
Kapil Bhardwaj, Ashfak Nehal, Dmitrii Semenov, Roman Sotner, Sayani Majumdar   +4 more
wiley   +1 more source

Galloping of overhead power lines conductors [PDF]

Engineering Mechanics, 2018
openaire   +1 more source

Array‐Level Characterization of Cryogenic RRAM

Advanced Electronic Materials, EarlyView.
This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu, Ruofei Hu, Zhixing Jiang, Feng Xu, Bin Gao, Jianshi Tang, He Qian, Huaqiang Wu   +7 more
wiley   +1 more source

Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation

Advanced Electronic Materials, EarlyView.
A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang, Nellie Laleni, Sina Ranjbar, Andreas Tsiougkos, Nandakishor Yadav, Vasilis Pavlidis, Thomas Kämpfe   +6 more
wiley   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source