Results 141 to 150 of about 21,020,521 (317)

Redefining the Health Risk of Battery Materials Through a Biologically Transformed Metal Mixture

Advanced Science, EarlyView.
Inhaled NCM particles undergo lysosomal degradation, releasing complex ion mixtures that induce systemic impact. The impact is determined by a critical balance between antagonistic Ni‐Co interactions and synergistic Mn effects. To capture these complexities in risk assessment, we develop an IAI model, ensuring a more accurate quantitative risk ...
Ze Zhang, Gan Miao, Xueyu Zhang, Zhao Shu, Dawei Lu, Yujie Song, Shanfa Yu, Qian Liu, Yang Song, Rong Zhang, Xiaoting Jin, Yuxin Zheng   +11 more
wiley   +1 more source

Simulation and optimization of enhanced back-gated GaN-based HEMT ultraviolet photodetector with a high photo-to-dark current ratio

AIP Advances
In this work, the performance of an innovative structure of an enhanced back-gated GaN-based HEMT ultraviolet photodetector is investigated using Silvaco Atlas.
Wulong Yuan, Xianyun Liu, Di Yang, Jun Yao, Chenglong Lu   +4 more
doaj   +1 more source

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate. [PDF]

Micromachines (Basel), 2023
Han Z, Li X, Wang H, Yuan J, Wang J, Wang M, Yang W, You S, Chang J, Zhang J, Hao Y.   +10 more
europepmc   +1 more source

Bioinspired Adaptive Leg‐Claw Enables Robust Perching and Grasping for UAVs

Advanced Science, EarlyView.
Inspired by owl limb morphology and bat roosting behavior, this study presents a bioinspired adaptive leg‐claw mechanism that enables UAVs to perform robust and versatile perching and grasping. The design integrates a four‐link tibial structure, tension‐driven deformable feet, and active control, enabling stable perching on various branches and ...
Tianyu Cheng, Shaokun Wang, Jiehan Zou, Guiwen Shi, Zhongxue Gan, I‐Ming Chen, Guo‐Niu Zhu   +6 more
wiley   +1 more source

Optimization of annealing conditions for Ag/p-GaN ohmic contacts. [PDF]

Appl Phys A Mater Sci Process, 2021
Pan S, Lu Y, Liang Z, Xu C, Pan D, Zhou Y, Zhang R, Zheng Y.   +7 more
europepmc   +1 more source

Water‐Assisted Exfoliation of HfO2‐Based Membrane for Flexible Robust Ferroelectric Synaptic Transistors

Advanced Science, EarlyView.
A flexible freestanding HfO2‐based ferroelectric membrane is achieved via a water‐assisted exfoliation technique using a Sr4Al2O₇ sacrificial layer. The BaTiO3/Hf0.5Zr0.5O2/BaTiO3 heterostructure maintains robust ferroelectricity and exhibits reliable synaptic plasticity.
Han Zhang, Miao Zeng, Jingxin Chen, Lei Wang, Sai Jiang, Qian Cao, Xuebo Li, Zekun Hou, Chun Shen, Yulin Gan, Ning Fang, Zhaoliang Liao, Ziyao Zhou, Lin Hao   +13 more
wiley   +1 more source

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors. [PDF]

Micromachines (Basel), 2022
Wang H, You H, Yang J, Yang M, Wang L, Zhao H, Xie Z, Chen D.   +7 more
europepmc   +1 more source

Recent Advances in Sustainable Single‐Atom Catalysts from Biomass and Solid Waste: Design, Synthesis and Applications

Advanced Science, EarlyView.
Biomass‐ and solid waste‐derived sustainable single‐atom catalysts (Sus‐SACs) provide a cost‐effective and renewable approach to catalyst design. This review summarizes precursor selection, including AI‐assisted screening, synthesis strategies with emphasis on ultrafast methods, and advanced characterization techniques.
Hongzhe He, Yuhang Qiu, Ruoqun Zhang, Sasha Yang, Jingwei Wang, Jianglong Yu, Lian Zhang, Ning Chen, Baiqian Dai   +8 more
wiley   +1 more source

Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing

Applied Physics Express
Drive-in diffusion of Mg implanted into GaN during ultra-high pressure annealing leads to low surface acceptor concentrations. This favors p-type Schottky contact formation, which severely increases the on-state resistance of Mg-implanted GaN pn diodes ...
Md Azizul Hasan, Matthew Alessi, Dolar Khachariya, Will Mecouch, Seiji Mita, Pramod Reddy, Kacper Sierakowski, Tomasz Sochacki, Michal Bockowski, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis   +12 more
doaj   +1 more source

Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors. [PDF]

Micromachines (Basel), 2023
Chae M, Kim H.
europepmc   +1 more source