Results 261 to 270 of about 21,020,521 (317)

p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering

IEEE Transactions on Electron Devices, 2022
We present a novel p-gallium nitride (GaN) gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in metal-organic chemical vapor deposition (MOCVD), which aims at lowering the electric field across the gate.
Guangnan Zhou, Fanming Zeng, Rong Gao, Qing Wang, K. Cheng, Lingqi Li, P. Xiang, Fangzhou Du, Guangrui Xia, Hongyu Yu   +9 more
semanticscholar   +1 more source

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

IEEE Transactions on Electron Devices, 2022
A normally- OFF AlGaN/GaN high-electron-mobility transistor (HEMT) with p-GaN gate was fabricated on free-standing GaN substrate. The self-terminated etching technology was achieved by combining with AlN stop layer and SF6-based etching gas.
Hsiang-Chun Wang, Taofei Pu, Xiaobo Li, Chia-Hao Liu, Junye Wu, Jiaying Yang, Ziyue Zhang, Youming Lu, Qi Wang, Lijun Song, H. Chiu, J. Ao, Xinke Liu   +12 more
semanticscholar   +1 more source

P-GaN∕ZnO nanorod heterojunction LEDs—effect of carrier concentration in p-GaN

AIP Conference Proceedings, 2011
We studied the effect of carrier concentration in p‐GaN substrate on the performance of p‐GaN/n‐ZnO nanorod heterojunction LEDs. ZnO nanorods were electrodeposited on commercial p‐GaN wafers in a two electrode system from aqueous solutions of zinc nitrate and hexamethylenetetramine.
A. M. C. Ng, X. Y. Chen, F. Fang, A. B. Djurišić, W. K. Chan, K. W. Cheah, Jisoon Ihm, Hyeonsik Cheong   +7 more
openaire   +2 more sources

High-performance reverse blocking p-GaN HEMTs with recessed Schottky and p-GaN isolation blocks drain

Applied Physics Letters, 2021
In this Letter, the p-GaN high electron mobility transistor (HEMT) with hybrid drain of recessed Schottky (RS) and p-GaN isolation blocks' drain (HSP drain) is proposed and fabricated for good reverse blocking capability. The related operation mechanism has been investigated and revealed.
Haiyong Wang, Wei Mao, Shenglei Zhao, Beiluan Gao, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao   +9 more
openaire   +1 more source

Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer

IEEE Electron Device Letters, 2021
In this work, the dual junction-high-electron-mobility-transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal.
Chia-Hao Liu, H. Chiu, Hsiang-Chun Wang, H. Kao, Chong-Rong Huang   +4 more
semanticscholar   +1 more source

Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

IEEE transactions on device and materials reliability, 2021
We present detailed ON-state gate current characterization of Schottky gate p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs) on two distinct gate processes.
A. Stockman, E. Canato, M. Meneghini, G. Meneghesso, P. Moens, Benoit Gakeroot   +5 more
semanticscholar   +1 more source

Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs

IEEE transactions on industrial electronics (1982. Print), 2021
The high-speed superiority of GaN power devices with silicon-based peripheral circuits is not yet fully leveraged, mainly due to the parasitic inductance of interconnections. In this article, we demonstrate a GaN-based gate driver with an overcurrent (OC)
Han Xu, Gaofei Tang, Jin Wei, Zheyang Zheng, K. J. Chen   +4 more
semanticscholar   +1 more source

Plasma damage in p-GaN

Journal of Electronic Materials, 2000
The effect of Inductively Coupled Plasma H2 or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400–550 A.
Cao, X. A., Dang, G. T., Hickman, R. A., Pearton, S. J., Ren, F., Shul, R. J., Van Hove, J. M., Zhang, A. P., Zhang, L.   +8 more
openaire   +1 more source

Schottky Barriers on p-GaN

MRS Proceedings, 1995
ABSTRACTSchottky barriers were formed on p-GaN. p-GaN layers doped with Mg were grown by metalorganic chemical vapor deposition (MOCVD). 6H-SiC wafers were used as substrates. The barriers were made by vacuum thermal evaporation of Au. Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the barriers were investigated.
N.I. Kuznetsov, E.V. Kalinina, V.A. Soloviev, V.A. Dmitriev   +3 more
openaire   +1 more source

An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure

Journal of Applied Physics, 2021
To improve the performance of the conventional p-GaN gate AlGaN/GaN high electron mobility transistors (HEMTs), we propose an improved design for e-mode AlGaN/GaN HEMT with a gate stack β-Ga2O3/p-GaN structure.
M. Ge, Yi Li, Youhua Zhu, Dunjun Chen, Zhiliang Wang, Shuxin Tan   +5 more
semanticscholar   +1 more source