Results 271 to 280 of about 21,020,521 (317)

Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation

Applied Physics Letters, 2021
In this Letter, the degradation mechanism of Schottky p-type GaN (P-GaN) gate stack in GaN power devices under neutron irradiation is studied. After 1-MeV neutron irradiation at fluences of 6 × 1013 and 1 × 1014 neutron/cm2, device threshold voltage VTH ...
Ruize Sun, Xinghuan Chen, Chao Liu, Wanjun Chen, Bo Zhang   +4 more
semanticscholar   +1 more source

Si diffusion in p-GaN

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2004
The characteristics of p-type Mg-doped GaN films diffused with Si are studied. N-type conductivity is achieved, and the carrier mobility of diffused GaN is 90–150 cm2 V−1 s−1, higher than that of p-GaN but less than that of epitaxially grown n-GaN. The Mg acceptor states could become deep compensating defects, and the compensation ratio NA/ND is 0.3, 0.
C. J. Pan, G. C. Chi, B. J. Pong, J. K. Sheu, J. Y. Chen   +4 more
openaire   +1 more source

Post-growth enhancement pf p-GaN conductivity

The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004., 2004
The paper reports on the investigation an improvement of the p-type conductivity of Mg-doped GaN by creating Ga-vacancies in the lattice.
Karouta, F., Kappers, M.J., Krämer, M.C.J.C.M., Jacobs, B.   +3 more
openaire   +2 more sources

Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs

IEEE transactions on power electronics, 2021
The threshold voltage (VTH) of an enhancement-mode Schottky-type p-GaN gate high-electron-mobility transistor (HEMT) is found to have a special dependence on the drain bias.
Han Xu, Jin Wei, Ruiliang Xie, Zheyang Zheng, Jiabei He, K. J. Chen   +5 more
semanticscholar   +1 more source

Ohmic contacts on p-GaN (Part I):

Materials Science in Semiconductor Processing, 2001
Abstract The changes in contact resistivity and I–V curve linearity after annealing of Pd, Ni/Au, Cr/Au, Co/Au, Pt and Au contacts on p-GaN after tempering below and above 500°C have been investigated. CTLM-layered structures on p-GaN were thermally stressed and electrically analyzed.
Roland Wenzel, Gerhard G Fischer, Rainer Schmid-Fetzer   +2 more
openaire   +1 more source

IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs

IEEE transactions on industrial electronics (1982. Print), 2021
The dynamic on-resistance (rON) of two mainstream 600 V/650 V p-GaN gate power high-electron-mobility transistors (HEMTs) with Ohmic- and Schottky-type p-GaN gate contacts are characterized under the hard-switching condition and show strong dependences ...
Kailun Zhong, Jin Wei, Jiabei He, S. Feng, Yuru Wang, Song Yang, K. J. Chen   +6 more
semanticscholar   +1 more source

Development of Enhancement-Mode GaN p-FET With Post-Etch Wet Treatment on p-GaN Gate HEMT Epi-Wafer

IEEE Transactions on Electron Devices
Developing E-mode p-channel field-effect transistors (p-FETs) on the standard p-GaN gate HEMT epi-wafer is highly motivated to facilitate the realization of gallium nitride (GaN) complementary logic (CL) circuits and power-integrated circuits (PICs). The
Teng Li, Meng Zhang, Jingjing Yu, Jiawei Cui, Junjie Yang, Yanlin Wu, Han Yang, Yamin Zhang, Xuelin Yang, Maojun Wang, Shiwei Feng, B. Shen, Jin Wei   +12 more
semanticscholar   +1 more source

Electrical Transport Properties of p-GaN

Japanese Journal of Applied Physics, 1996
Electrical transport properties of Mg-doped p-GaN grown by organometallic vapor phase epitaxy were studied between 100 and 700 K. Calculations using Fermi-Dirac statistigs were carried out, identifying the majority carrier to be holes over the whole temperature range considered. The acceptor level is 0.17 ± 0.01 eV.
Hisashi Nakayama, Peter Hacke, Mohammad Rezaul Huque Khan, Theeradetch Detchprohm, Kazumasa Hiramatsu Kazumasa Hiramatsu, Nobuhiko Sawaki Nobuhiko Sawaki   +5 more
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ZnO Nanowire/p-GaN Heterojunction LEDs

MRS Proceedings, 2007
AbstractThis article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse
Heiko O. Jacobs, Jesse Cole, Amir M. Dabiran, Heiko O. Jacobs   +3 more
openaire   +1 more source

Neutron irradiation effects in p-GaN

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006
Electrical properties, admittance, and microcathodoluminescence spectra are compared for p-GaN samples grown by hydride vapor phase epitaxy (HVPE) and by molecular beam epitaxy (MBE). The former are characterized by a high 300K hole concentration and a weak temperature dependence of conductivity.
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, K. D. Shcherbatchev, V. T. Bublik, M. I. Voronova, S. J. Pearton, A. Dabiran, A. V. Osinsky   +12 more
openaire   +1 more source