Results 101 to 110 of about 23,761 (161)
Adaptive tunneling photodiodes enable visual recognition in high-contrast scenes. [PDF]
Sci AdvLiu L +17 more
europepmc +1 more source
Advances in Silicon-Based UV Light Detection. [PDF]
Micromachines (Basel)Kamal A, Hong S, Ju H.
europepmc +1 more source
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Large-area lateral p-i-n photodiode on SOI
IEEE Transactions on Electron Devices, 2002Results of a large-area, low-capacitance lateral p-i-n photodiode in silicon-on-insulator (SOI) are presented. This photodiode possesses an antireflection coating optimized for blue light and is therefore appropriate for scintillation detector applications.
Horst Zimmermann, P Seegebrecht
exaly +2 more sources
ELECTROPHYSICAL PARAMETERS OF p-i-n -PHOTODIODES
SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS, 2021t was found in the work that for p-and- n-photodiodes on the reverse branch current- voltage characteristic, steps are observed in the region of voltages of 25 and 70 V due to the terminology-intensive procedure for changing the ...
V.B. Odzhaev +9 more
openaire +1 more source
Design and Simulation of InGaN/GaN p–i–n Photodiodes
physica status solidi (a), 2018InGaN ternary alloys with their band gaps varying from 0.7 to 3.4 eV, are very promising for photodetector devices operating from UV to IR wavelength range. Using Silvaco–Atlas software, an In0.1Ga0.9N/GaN based p–i–n photodiode is designed and theJ–Vcharacteristics, the spectral responsivity, the frequency response and the cut‐off frequency as a ...
Elbar, Mourad +3 more
openaire +2 more sources
Light Dependent Temperature Characteristics of a-Si:H p-i-n Photodiode
2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), 2021As a result of chemical reactions in certain biological samples, thermal energy can be released that affects the transducer response of optical label-free biosensors used in lab-on-chip applications. To improve and understand the sensitivity limitations, the transient thermal characteristics of the a-Si:H p-i-n photodiode are measured and analyzed.
Vera Gradisnik +3 more
openaire +1 more source
Quantum yield of p–i–n photodiodes
Physica Status Solidi (a), 1973An expression for the quantum yield of p–i–n photodiodes is formulated that takes into account the effects of carrier transport and recombination in the p-type region and consequently describes the decline in the response observed for short wavelength excitation.
S. S. Li, F. A. Lindholm
openaire +1 more source
GaN nanostructured p-i-n photodiodes
Applied Physics Letters, 2008We report the fabrication of nanostructured p-i-n photodiodes based on GaN. Each device comprises arrays of ∼200nm diameter and 520nm tall nanopillars on a 1μm period, fabricated by e-beam lithography. Strong rectifying behavior was obtained with an average reverse current per nanopillar of 5fA at −5V.
J. L. Pau +4 more
openaire +1 more source
Modeling and characterization of GaN p-i-n photodiodes
SPIE Proceedings, 2006This paper reports temperature-dependent DC and small-signal RF characteristics of a 0.4-mm-radius sapphire-based GaN p-i-n diode between -60°C and 175°C. Deep levels approximately 1 eV below the conduction band were observed in both persistent photo-conductance and photo-capacitance measurements. Self-heating effects were also observed and modeled
Jie Deng +6 more
openaire +1 more source