Results 121 to 130 of about 23,761 (161)

Frequency conversion of optical signals in p-i-n photodiodes

IEEE Transactions on Microwave Theory and Techniques, 2005
A planar InGaAsP/InGaAs/InGaAsP p-i-n photodiode has been fabricated and used for frequency conversion of two optical signals. Nonlinear properties of the photodiode have been investigated. It is shown that photodiode responsivity R(V) dependence on bias voltage can be characterized by a parameter of the nonlinearity A, which is equal to R(V)middotR'(V)
S.A. Malyshev, B.A. Galwas, A.L. Chizh, J. Dawidczyk, V.F. Andrievski   +4 more
openaire   +1 more source

Characterization of a Neutron Spectrometer Based on a P-I-N Photodiode

2002
Rome (Italy), Editor A ...
GIULINI CASTIGLIONI AGOSTEO, STEFANO LUIGI MARIA, ZOTTO, PIERLUIGI, CASTOLDI, ANDREA, P. Colautti, D'ANGELO, GIOVANNI, DE NARDO, LUIGI, FOGLIO PARA, ARMANDO, I. Lippi, POLA, ANDREA, G. Tornielli   +9 more
openaire   +5 more sources

Low‐temperature amorphous silicon p–i–n photodiodes

physica status solidi (b), 2009
AbstractAmorphous silicon p–i–n photodiodes are important for image sensors and solar cells. The paper describes the properties of photodiodes fabricated below 200 °C on flexible plastic substrates. The increased defect density of the low‐temperature growth increases the reverse saturation current but the forward characteristics are largely unchanged ...
Robert A. Street, William S. Wong, Rene Lujan   +2 more
openaire   +1 more source

Waveguide integrated MQW p-i-n photodiodes

2017
In this work, waveguide integrated multiple quantum well p-i-n photodiodes are developed and characterized. Compared to bulk photodiodes, multiple quantum well photodiodes have special properties including a large and tunable polarization dependent loss.
openaire   +2 more sources

P-I-N Photodiodes for Optical Control of Microwave Circuits

IEEE Journal of Selected Topics in Quantum Electronics, 2004
The full-device model of the p-i-n photodiode based on a harmonic balance method and drift-diffusion description of charge carrier transport in semiconductor heterostructure in time domain, taking into account external equivalent circuit, is developed. Computer simulation of p-n junction capacitance and resistance under different optical powers in the ...
S.A. Malyshev, A.A. Chizh
openaire   +1 more source

Thin silicon film p-i-n photodiodes with internal reflection

IEEE Transactions on Electron Devices, 1978
A new kind of silicon p-i-n photodiode is presented which combines broad wavelength response at high quantum efficiencies (450 to 900 nm ~85 percent) and extremely fast response time (typically below 100 ps). The diodes use internal light reflection. Theoretical expressions for different types of gratings are presented.
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Effects of radiation damage in silicon p - i - n photodiodes

Semiconductor Science and Technology, 1997
The effects of radiation damage in two silicon p - i - n photodiodes fabricated from high resistivity material have been studied. The devices have been irradiated by 1 MeV neutrons to three different fluences up to . Current, capacitance and charge measurements were performed prior to irradiation and soon after. Our results indicate that the damage has
M McPherson, B K Jones, T Sloan
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Nitride-Based Flip-Chip p-i-n Photodiodes

IEEE Transactions on Advanced Packaging, 2006
Nitride-based flip-chip p-i-n photodiodes were fabricated and characterized. It was found that we could achieve a small dark current of 5times10-10 A at -5 V and a large rejection ratio larger than three orders of magnitude. It was also found that the photodiodes only detect optical signals with wavelengths between 365 and 378 nm.
T.K. Ko, S.J. Chang, Y.K. Su, Y.Z. Chiou, C.S. Chang, S.C. Shei, J.K. Sheu, W.C. Lai, Y.C. Lin, W.S. Chen, C.F. Shen   +10 more
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Rise time of silicon p-i-n photodiodes

1983
Exact analytical expressions are derived for the short circuit photodiode currents excited by light pulses, under the assumption that the drift carrier velocity linearly depends on the electric field in the depletion layer. Reflection from the back surface of the photodiode is taken into account.
Đurić, Zoran G., Rađenović, Branislav   +1 more
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Analytic solutions for distortion products in P(i)N photodiodes

2001 International Topical Meeting on Microwave Photonics. Technical Digest. MWP'01 (Cat. No.01EX476), 2004
In analog communication links, photodiodes generate frequency dependent intermodulation products as a result of space charge saturation. Previous analyses have been restricted to numerical methods. We describe analytic solutions for the distortions to third order.
openaire   +1 more source