Results 111 to 120 of about 23,761 (161)

Modeling and characterization of microwave p-i-n photodiode

ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386), 2002
A numerical one-dimensional drift-diffusion model of the p-i-n photodiode based on the InP/InGaAs/InGaAsP heterostructure which takes into account the influence of an external electric circuit and parasitic elements is presented. S/sub 11/ parameters of the photodiode are theoretically and experimentally investigated under illumination and in the ...
A.L. Chizh, S.A. Malyshev
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Transient recovery of a-Si:H p-i-n photodiodes

Journal of Non-Crystalline Solids, 1991
We analyze the bipolar operation of an a-Si:H p-i-n photodiode in isolation and connected to a load. A square-wave voltage was applied to this circuit, alternately reverse and forward biasing the photodiode. We investigate the positive transient, during which double-injection, dominated by electron transport, is in evidence initially and disappears as ...
Pierre R. Barbier, Garret Moddel
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Bandwidth improvement of a homojunction p-i-n photodiode

IEEE Journal of Quantum Electronics, 1997
This paper presents an analytical study of the impact of doping profile in the p and n regions on the improvement of the bandwidth of a homo-junction p-i-n photodiode. In this study, nonuniformly doped p and n regions are considered. Thus, due to the nonuniformity in the doping, an electric field is established in both the p and n regions.
Y. Zebda, S. Abu-Helweh
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MODELLING OF P‐I-N PHOTODIODES UNDER HIGH ILLUMINATION CONDITIONS

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 1997
The response of a p-i-n photodetector made from gallium arsenide to both steady-state and transient illumination has been modelled. Both an ensemble Monte-Carlo model and a drift-diffusion model were used, the latter with the choice of two different mobility models.
S. P. WILSON, S. J. WOODS, A. B. WALKER
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Behavioral electromagnetic models of high‐speed p‐i‐n photodiodes

Microwave and Optical Technology Letters, 2011
AbstractThis article presents a methodology for developing small‐signal behavioral electromagnetic (EM) models of p‐i‐n photodiodes (PDs) for high‐speed applications. The EM model includes RC bandwidth limitation effect and transit‐time effect. The model is capable of accurately modeling arbitrary complex parasitics of PD chips.
Jiang C., Krozer V., Johansen T.K., Bach H.-G., Mekonnen G.G., Yan L.   +5 more
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Ge on Si p-i-n photodiodes operating at 10Gbit∕s

Applied Physics Letters, 2006
We report on fast p-i-n photodetectors operating in the near infrared and realized in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600°C without affecting the crystal quality and allowing the integration with standard silicon processes.
Colace L, Balbi M, Masini G, ASSANTO, GAETANO, Luan HC, Kimerling LC   +5 more
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Velocity-matched distributed photodetectors with p-i-n photodiodes

International Topical Meeting on Microwave Photonics MWP 2000 (Cat. No.00EX430), 2002
We report on the first demonstration of velocity-matched distributed p-i-n photodetectors. A record high linear DC photocurrent of 45 mA has been achieved without suffering from thermal damage, thanks to the superior power handling capability of p-i-n photodiodes. The frequency response is flat from 1 GHz to 35 GHz.
M.S. Islam, T. Jung, T. Itoh, M.C. Wu, D.L. Sivco, Y. Cho   +5 more
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Modeling of Multiple-Quantum-Well p-i-n Photodiodes

IEEE Journal of Quantum Electronics, 2014
A model for multiple-quantum well (MQW) p-i-n photodiode (PD) is presented. The model accounts for the responsivity spectrum and the polarization-dependent loss. The important physical effects for modeling MQW PDs are the carrier transit time through the MQW layers and the free carrier density in the quantum wells.
Gan Zhou, Patrick Runge
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Thin silicon ion-implanted p-i-n photodiodes

IEE Journal on SolidState and Electron Devices, 1977
Thin (6μm) thick Si has been ion implanted to fabricate a p–i–n photodiode with an overall rise time probably better than 80 ps. The narrow depletion region gives short transit times, and the shallow ion-implanted junctions lead to minimal amounts of minority carrier storage, thus eliminating any slow tail to the voltage-output response to a step ...
R.G. Plumb, J.E. Carroll
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Ultrafast Graded Double Heterostructure p-i-n Photodiode

Picosecond Electronics and Optoelectronics, 1991
Efficient high bandwidth photodetectors are of great interest for use in optical communication, as well as in ultrafast measurement techniques. The shortest electrical pulses have been generated from photoconductors, although the quantum efficiency of the sub 10 ps devices has been too low for use in analog or digital transmission experiments ...
Y. G. Wey, K. Giboney, D. L. Crawford, J. E. Bowers, M. J. Rodwell, P. Silvestre, M. J. Hafich, G. Y. Robinson   +7 more
openaire   +1 more source