Results 31 to 40 of about 23,761 (161)
Influence of Surface Resistance of Silicon p-i-n Photodiodes n+-Layer on their Electrical Parameters
Фізика і хімія твердого тіла, 2022 Silicon quadrant p-i-n photodiodes of different concentrations of diffused phosphorus in the n+- layer were fabricated. The experimental curve of phosphorus impurity distribution along the depth of the diffusion layer is obtained. The influence of charge
M.S. Kukurudziak
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Output Power Monitoring of Ultraviolet Light-Emitting Diode via Sapphire Substrate
Photonics, 2020 Ultraviolet (UV) light plays an important role in air/water/surface sterilization now. Maintaining a certain light intensity is often required to attain the targeted effect. In this paper, on-chip power monitoring of a UV-A light-emitting diode (LED) via
Ching-Hua Chen +5 more
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Defect Analysis in a Long-Wave Infrared HgCdTe Auger-Suppressed Photodiode
SensorsDeep defects in the long-wave infrared (LWIR) HgCdTe heterostructure photodiode were measured via deep-level transient spectroscopy (DLTS) and photoluminescence (PL).
Małgorzata Kopytko +5 more
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InGaAs p-i-n Photodiodes for Microwave Applications
, 2004 The experimental and theoretical study of the surface-illuminated InGaAs p-i-n photodiodes for such microwave applications as photonic microwave generation, optical control of microwave circuits and optoelectronic mixing is presented.
Malyshev, Sergei +2 more
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High temperature AlInP X-ray spectrometers
Scientific Reports, 2019 Two custom-made Al0.52In0.48P p+-i-n+ mesa photodiodes with different diameters (217 µm ± 15 µm and 409 µm ± 28 µm) and i layer thicknesses of 6 µm have been electrically characterised over the temperature range 0 °C to 100 °C.
S. Zhao +4 more
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Scaling and Modeling of High Temperature 4H-SiC p-i-n Photodiodes
IEEE Journal of the Electron Devices Society, 2018 4H-SiC p-i-n photodiodes with various mesa areas (40 000 μm2, 2500 μm2, 1600 μm2, and 400 μm2) have been fabricated. Both C-V and I-V characteristics of the photodiodes have been measured at room temperature, 200 °C ...
Shuoben Hou +3 more
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Photovaractor performance for optically controlled microwavecircuits
Journal of Telecommunications and Information Technology, 2002 The photovaractor for optically controlled microwave circuits was designed and studied. The photovaractor module was fabricated as a planar p-i-n photodiode chip placed in a fibre optic matching receptacles.
Sergey A. Malyshev +8 more
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Characterization of Power-to-Phase Conversion in High-Speed P-I-N Photodiodes
IEEE Photonics Journal, 2011 Fluctuations of the optical power incident on a photodiode can be converted into phase fluctuations of the resulting electronic signal due to nonlinear saturation in the semiconductor.
J. Taylor +6 more
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InGaAs x-ray photodiode for spectroscopy
Materials Research Express, 2020 A prototype In _0.53 Ga _0.47 As p ^+ -i-n ^+ x-ray photodiode, fabricated from material grown by metalorganic vapour phase epitaxy, was investigated as a novel detector of x-rays.
M D C Whitaker +3 more
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Continuous Holdup Measurements with Silicon P-I-N Photodiodes [PDF]
, 2002 We report on the behavior of silicon P-I-N photodiodes used to perform holdup measurements on plumbing. These detectors differ from traditional scintillation detectors in that no high-voltage is required, no scintillator is used (gamma and X rays are converted directly by the diode), and they are considerably more compact.
Bell, Z. W. +4 more
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