Results 41 to 50 of about 23,761 (161)

Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity [PDF]

Журнал нано- та електронної фізики, 2015
In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity), the construction ...
V.N. Murashev, S.Yu. Yurchuk, S.A. Legotin, V.P. Yaromskiy, Yu.V. Osipov, V.P. Astahov, D.S. El’nikov, S.I. Didenko, O.I. Rabinovich, K.A. Kuz’mina   +9 more
doaj  

Rapid thermal annealing in silicon diode and photodiode technologies [PDF]

Modern Electronic Materials
The effect of rapid thermal annealing in H2 atmosphere on the ohmic properties of contacts on the basis of two-layered transition metals (e.g. Ti, Ni, Pd and Cr) and Au compositions on р+-Si has been studied.
Aleksandra S. Kim, Natalya A. Perevedentseva, Sergey Yu. Yurchuck, Fedor D. Korzhov   +3 more
doaj   +3 more sources

Planar sensors for dosimetry in mixed gamma-neutron fields [PDF]

Ядерна фізика та енергетика, 2007
Circular silicon p-i-n diodes fabricated by planar technology have been studied. The diodes allow simultaneously measurements of neutron doses and gamma dose rates in mixed fields.
I. E. Anokhin, O. S. Zinets, A. B. Rosenfeld, M. Yudelev, V. L. Perevertailo   +4 more
doaj  

Highly-Sensitive Integrating Optical Receiver With Large PIN Photodiode

IEEE Photonics Journal
This paper presents a highly-sensitive monolithic optoelectronic receiver in $\mathbf{180\, {nm}}$ CMOS. An integrating front-end with noise matching via an negative Miller capacitance is proposed, to reduce the power penalty imposed by large PIN ...
Simon Michael Laube, Christoph Gasser, Kerstin Schneider-Hornstein, Horst Zimmermann   +3 more
doaj   +1 more source

Investigation of microelectronic photodetector devices with an artificial resistor

Технологія та конструювання в електронній апаратурі, 2003
Photodetector devices for pulsed infrared signals based on a silicon p–i–n photodiode and an operational amplifier were experimentally investigated. In the feedback circuit of the amplifier, an "artificial" resistor was included, which exhibits lower ...
V. I. Korneichuk, O. A. Rogalevich
doaj  

Innovative Detection System of Ochratoxin A by Thin Film Photodiodes

Sensors, 2007
In this work we present, for the first time, a rapid, compact and innovativemethod for detection of Ochratoxin A (OTA) based on hydrogenated amorphous silicon (a-Si:H) sensors.
Riccardo Scipinotti, Alessandra Ricelli, Augusto Nascetti, Corrado Fanelli, Gianpiero de Cesare, Domenico Caputo   +5 more
doaj   +1 more source

Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell

Scientific Reports, 2017
This paper investigates the effects of temperature on an InGaP (GaInP) 55Fe X-ray photovoltaic cell prototype for a radioisotope microbattery (also called a nuclear microbattery).
S. Butera, M. D. C. Whitaker, A. B. Krysa, A. M. Barnett   +3 more
doaj   +1 more source

Synthesis of 2D yttrium zinc oxide nanosheets via simple chemical route toward high performance Schottky diode based on large charge carriers density and photoresponsivity

Materials Research Express
Yttrium zinc oxide (Zn _0.85 Y _0.15 O) nanostructures were stoichiometrically prepared by co-precipitation method. XRD, EDX, XPS, SEM, and TEM spectroscopy were examined to investigate structure, composition, and morphological characteristics.
Miad Ali Siddiq
doaj   +1 more source

Pushing the Limits of PIN Photodiode Direct Detection: Integrate-and-Dump Receivers With CDS Equalization Closing the Gap to the Quantum Limit to 13.9 dB

IEEE Access
This paper presents a highly sensitive monolithic direct detection receiver with dot-cathode PIN photodiode, integrate-and-dump front-end, and correlated double sampling (CDS) equalization.
Christoph Gasser, Simon Michael Laube, Horst Zimmermann   +2 more
doaj   +1 more source

Optimization of the optical scheme of a photodetector module operating in the spectral range of 1.3–1.6 μm

Научно-технический вестник информационных технологий, механики и оптики
Optical system consisting of single-mode optical fiber and p-i-n photodiode semiconductor chip with InGaAs active layer was investigated. Considered photodetector module has responsivity in 1.3–1.6 µm.
Ya. N. Kovach, V. V. Andryushkin, E. S. Kolodeznyi, I. I. Novikov, A. A. Petrenko, A. V. Kamarchuk, S. S. Rochas, D. A. Bauman   +7 more
doaj   +1 more source