Results 21 to 30 of about 23,761 (161)

Silicic p–i–n-photodiode with small dark current

Технологія та конструювання в електронній апаратурі, 2011
The influence of circular metallization of the reverse side of p–i–n-photodiode crystal based on highly ohm silicon on it’s characteristics are explored.
Yu. G. Dobrovolskiy, A. A. Ashcheulov
doaj   +2 more sources

Limits to Maximum Absorption Length in Waveguide Photodiodes

IEEE Photonics Journal, 2011
The maximum photocurrent, power dissipation, and linearity of waveguide photodiodes are limited by the length over which the input optical power is absorbed.
Shannon M. Madison, Jonathan Klamkin, Douglas C. Oakley, Antonio Napoleone, Jason J. Plant, Paul W. Juodawlkis   +5 more
doaj   +1 more source

InGaAs-based high-performance p-i-n photodiodes [PDF]

IEEE Photonics Technology Letters, 2002
We have designed, fabricated, and characterized high-speed and high-efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The devices were fabricated by a microwave-compatible process. By using a postprocess recess etch, we tuned the resonance wavelength from 1605 to 1558 nm while keeping the peak efficiencies above 60%
Kimukin, I., Biyikli, B., Butun, B., Aytur, O., Unlu, M. S., Ozbay, E.   +5 more
openaire   +3 more sources

Interactive Learning Material for Optoelectronic Devices using MATLAB-based GUI

مجلة العلوم البحتة والتطبيقية, 2020
Optoelectronic devices have been a difficult subject to grasp for many university students who undertake electronic engineering. Many students find it difficult to understand the operation principle of the optoelectronic devices, for instance, how a ...
Ibrahim A. Nasir, Ahmed B Abdurrhman
doaj   +1 more source

Simulation study of front-illuminated GaN avalanche photodiodes with hole-initiated multiplication

Cogent Engineering, 2020
A flip-chip GaN p-i-n-i-n avalanche photodiode (APD) which integrates the merits of the prevailing APDs—hole-initiated multiplication process and front-illumination is proposed and studied via simulation.
Yangqian Wang, Yuliang Zhang, Yang A. Yang, Xing Lu, Xinbo Zou   +4 more
doaj   +1 more source

Synthesis of Alq3 by a facile co-precipitation approach and study the impact of CNTs support on its microstructure and electronic characteristics for photodiode development

Materials Research Express, 2023
The global demand for renewable energy as an alternative to traditional fossil fuels has motivated the scientific community to develop highly efficient nanocomposite materials that can be used for enhancement to optoelectronic technology.
Miad Ali Siddiq
doaj   +1 more source

Low Junction Capacitance PIN and Avalanche Photodiodes in 180 nm CMOS

IEEE Access
This paper presents a comprehensive study of low-capacitance PIN photodiodes and avalanche photodiodes (APDs) implemented in 180 nm CMOS.
Christoph Gasser, Seyed Saman Kohneh Poushi, Simon Michael Laube, Kerstin Schneider-Hornstein, Horst Zimmermann   +4 more
doaj   +1 more source

Photodetectors for X- and γ-Ray Scintillators

East European Journal of Physics
The article analyzes X- and γ-ray detectors based on the ionizing and scintillation principles of operation. The effectiveness of using silicon p-i-n and p-n photodiodes in scintillation sensors for detecting visible photoluminescent radiation is ...
Mykola S. Kukurudziak, Ivan P. Koziarskyi, Mykola S. Solodkyi, Eduard V. Maistruk, Vasylyna V. Kopach, Yurii O. Semeniuk, Mykola M. Pavliuk   +6 more
doaj   +1 more source

Characterising the Photonic-Assisted Coherent Free-Space Link of Sub-THz Data Transmission

IEEE Access, 2023
This study demonstrates a measurement setup of an over-the-air (OTA) sub-THz link using a hybrid system of transmission comprising standard optical communications components and propagating the signal over 6 meters.
Mohanad Dawood Al-Dabbagh, Jessica Smith, Thomas Kleine-Ostmann, Mira Naftaly, Irshaad Fatadin   +4 more
doaj   +1 more source

Silicic thermally stabilized p–i–n-photodiode

Технологія та конструювання в електронній апаратурі, 2006
A design of a silicon p–i–n photodiode crystal thermostabilized by a Peltier thermoelectric module is proposed and investigated. It is shown that such a design allows the noise current density to remain practically unchanged within the temperature range ...
Yu. G. Dobrovolsky
doaj