Results 1 to 10 of about 23,761 (161)
Modeling AlGaN p-i-n photodiodes
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 Ternary AlGaN alloys with a band gap of 3.4 to 6.2 eV are very promising for photodetectors in the UV wavelength range. Using the COMSOL MULTIPHYSICS software based on AlGaN, a p-i-n photodiode model was developed, including its I–V characteristic ...
N. N. Vorsin +5 more
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Silicon p-i-n photodiode with increased pulse sensitivity
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2021 P-n junction semiconductor photodetectors are widely used in various fields of science and technology, including automation and telecontrol, instrumentation equipment, tracking systems, guidance, etc. The most demanded photoelectronic devices are silicon
Mykola Kukurudziak, Yuriy Dobrovolsky
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A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials [PDF]
MicromachinesThis investigation is centered on the analysis of frequency response characteristics of a p-i-n photodiode using InxGa1−xAs/InP. The InGaAs/InP can be developed under three conditions: compression, tensile strain, and lattice matching.
Nesrine Bakalem +5 more
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Label-Free Detection of HeLa Cells Activity Excited by Blue LED [PDF]
SensorsThis paper investigates a novel optical method that uses a high-responsivity a-Si:H photodiode for label-free detection of luminescence from HeLa cervical cancer cells excited by a blue LED. We examine the energy distribution of the energy-gap density of
Vera Gradišnik +2 more
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Silicon four element p-i-n photodiode with improved characteristics
Радіоелектронні і комп'ютерні системи, 2023 This article presents the results of the development of silicon coordinate p-i-n photodiodes (PD) with improved parameters. The technological possibilities of reducing the gaps between the responsive areas of multi-element PDs were studied.
Mykola Kukurudziak
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On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications
Frontiers in Materials, 2022 We present a review of GaN avalanche photodiodes. GaN-based avalanche photodiodes are of emerging interest to the device community. The review covers various important aspects of the device such as the design space, substrate choice, edge termination ...
Dong Ji, Dong Ji, Srabanti Chowdhury
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Molecules, 2022 Organic-inorganic halide perovskites have demonstrated preeminent optoelectronic performance in recent years due to their unique material properties, and have shown great potential in the field of photodetectors.
Dan Wu +12 more
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Electronic transport mechanism and defect states for p-InP/i-InGaAs/n-InP photodiodes
Journal of Materials Research and Technology, 2022 We have studied the defect states and electronic transport mechanisms in the mismatched p-InP/i-InGaAs/n-InP photodiode grown by molecular beam epitaxy (MBE) using deep-level transient spectroscopy (DLTS) and current–voltage (I–V) measurements.
Thi Kim Oanh Vu +4 more
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Радіоелектронні і комп'ютерні системи, 2022 The sensitivity of the photodiode will depend on the amount of radiation power that it must register. The characteristics of a photodiode, as is known, are determined by its design.
Yuri Dobrovolsky, Yurii Sorokatyi
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A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance
IEEE Photonics Journal, 2021 We designed and fabricated narrow-band UV-B AlGaN p-i-n photodiodes (PDs) with a full-width at half-maximum (FWHM) of 8 nm by optimizing the Al composition and thickness of the AlGaN layers. To improve the photoelectric response of the narrow-band PDs, a
Qianyu Hou +10 more
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