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Ultrafast Graded Double Heterostructure p-i-n Photodiode
Picosecond Electronics and Optoelectronics, 1991Efficient high bandwidth photodetectors are of great interest for use in optical communication, as well as in ultrafast measurement techniques. The shortest electrical pulses have been generated from photoconductors, although the quantum efficiency of the sub 10 ps devices has been too low for use in analog or digital transmission experiments ...
Y. G. Wey +7 more
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Frequency conversion of optical signals in p-i-n photodiodes
IEEE Transactions on Microwave Theory and Techniques, 2005A planar InGaAsP/InGaAs/InGaAsP p-i-n photodiode has been fabricated and used for frequency conversion of two optical signals. Nonlinear properties of the photodiode have been investigated. It is shown that photodiode responsivity R(V) dependence on bias voltage can be characterized by a parameter of the nonlinearity A, which is equal to R(V)middotR'(V)
S.A. Malyshev +4 more
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Characterization of a Neutron Spectrometer Based on a P-I-N Photodiode
2002Rome (Italy), Editor A ...
GIULINI CASTIGLIONI AGOSTEO, STEFANO LUIGI MARIA +9 more
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Waveguide integrated MQW p-i-n photodiodes
2017In this work, waveguide integrated multiple quantum well p-i-n photodiodes are developed and characterized. Compared to bulk photodiodes, multiple quantum well photodiodes have special properties including a large and tunable polarization dependent loss.
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Low‐temperature amorphous silicon p–i–n photodiodes
physica status solidi (b), 2009AbstractAmorphous silicon p–i–n photodiodes are important for image sensors and solar cells. The paper describes the properties of photodiodes fabricated below 200 °C on flexible plastic substrates. The increased defect density of the low‐temperature growth increases the reverse saturation current but the forward characteristics are largely unchanged ...
Robert A. Street +2 more
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Thin silicon ion-implanted p-i-n photodiodes
IEE Journal on SolidState and Electron Devices, 1977Thin (6μm) thick Si has been ion implanted to fabricate a p–i–n photodiode with an overall rise time probably better than 80 ps. The narrow depletion region gives short transit times, and the shallow ion-implanted junctions lead to minimal amounts of minority carrier storage, thus eliminating any slow tail to the voltage-output response to a step ...
R.G. Plumb, J.E. Carroll
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Thin silicon film p-i-n photodiodes with internal reflection
IEEE Transactions on Electron Devices, 1978A new kind of silicon p-i-n photodiode is presented which combines broad wavelength response at high quantum efficiencies (450 to 900 nm ~85 percent) and extremely fast response time (typically below 100 ps). The diodes use internal light reflection. Theoretical expressions for different types of gratings are presented.
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The p-i-n junction-surface depletion-layer photodiode
IEEE Electron Device Letters, 1991With the aim of seeking the optimal structure for photodetectors, the p-i-n junction-surface depletion-layer photodiodes have been investigated. The structure of the photodiodes is different from that of the conventional photosensors. Experiments for the devices show that the structure of the p-i-n junction-surface depletion layer is very advantageous ...
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Rise time of silicon p-i-n photodiodes
1983Exact analytical expressions are derived for the short circuit photodiode currents excited by light pulses, under the assumption that the drift carrier velocity linearly depends on the electric field in the depletion layer. Reflection from the back surface of the photodiode is taken into account.
Đurić, Zoran G. +1 more
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A novel NiO-based p-i-n ultraviolet photodiode
Journal of Alloys and Compounds, 2023Ahmad Althumali +2 more
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