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Frequency Response Performance Analysis of p-i-n Photodiodes
2010This paper investigates the effects due to the absorption region width, bias voltage, temperature and wavelength of the incident light on the transit time limited frequency response of p-i-n photodiodes. The implemented numerical model is very general and enables us to obtain the frequency response of p-i-n photodiodes with an arbitrary electric field ...
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An Efficient 4H-SiC Photodiode for UV Sensing Applications
Electronics (Switzerland), 2021Hichem Bencherif +2 more
exaly
Photodiode and photocapacitor properties of Au/CdTe/p-Si/Al device
Journal of Alloys and Compounds, 2015Ahmed Al-Ghamdi +2 more
exaly
Single crystal ruthenium(II) complex dye based photodiode
Dyes and Pigments, 2016Osman Dayan +2 more
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The effect of size on photodiode pinch-off voltage for small pixel CMOS image sensors
Microelectronics Journal, 2009Sangsik Park
exaly
Development and Characterization of Sol-gel Derived Al Doped ZnO/p-Si Photodiode
Journal of Materials Science and Technology, 2010R M Mehra
exaly
p-i-n Photodiode with a p+ Guard Ring
Journal of Nano- and Electronic PhysicsD. O. Novikov +4 more
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