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Frequency Response Performance Analysis of p-i-n Photodiodes

2010
This paper investigates the effects due to the absorption region width, bias voltage, temperature and wavelength of the incident light on the transit time limited frequency response of p-i-n photodiodes. The implemented numerical model is very general and enables us to obtain the frequency response of p-i-n photodiodes with an arbitrary electric field ...
openaire   +1 more source

An Efficient 4H-SiC Photodiode for UV Sensing Applications

Electronics (Switzerland), 2021
Hichem Bencherif   +2 more
exaly  

Photodiode and photocapacitor properties of Au/CdTe/p-Si/Al device

Journal of Alloys and Compounds, 2015
Ahmed Al-Ghamdi   +2 more
exaly  

Single crystal ruthenium(II) complex dye based photodiode

Dyes and Pigments, 2016
Osman Dayan   +2 more
exaly  

Development and Characterization of Sol-gel Derived Al Doped ZnO/p-Si Photodiode

Journal of Materials Science and Technology, 2010
R M Mehra
exaly  

p-i-n Photodiode with a p+ Guard Ring

Journal of Nano- and Electronic Physics
D. O. Novikov   +4 more
openaire   +1 more source

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