Results 51 to 60 of about 23,858 (260)

Photovaractor performance for optically controlled microwavecircuits

open access: yesJournal of Telecommunications and Information Technology, 2002
The photovaractor for optically controlled microwave circuits was designed and studied. The photovaractor module was fabricated as a planar p-i-n photodiode chip placed in a fibre optic matching receptacles.
Sergey A. Malyshev   +8 more
doaj   +1 more source

The Evolution of Aerosol Jet Printing, A Review: Enhancing Material Versatility and Improvements for Next‐Generation Applications

open access: yesAdvanced Materials Technologies, EarlyView.
Aerosol Jet Printing (AJP) has emerged as a versatile additive manufacturing technique for high‐resolution, conformal, and multi‐material printing. This review highlights advances in printable materials, substrate compatibility, post‐processing, characterization, and process innovations, while critically discussing current challenges and future ...
Chandrachur Chatterjee   +2 more
wiley   +1 more source

InGaAs p-i-n Photodiodes for Microwave Applications

open access: yes, 2004
The experimental and theoretical study of the surface-illuminated InGaAs p-i-n photodiodes for such microwave applications as photonic microwave generation, optical control of microwave circuits and optoelectronic mixing is presented.
Malyshev, Sergei   +2 more
openaire   +2 more sources

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

open access: yesAdvanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald   +3 more
wiley   +1 more source

Characterization of Power-to-Phase Conversion in High-Speed P-I-N Photodiodes

open access: yesIEEE Photonics Journal, 2011
Fluctuations of the optical power incident on a photodiode can be converted into phase fluctuations of the resulting electronic signal due to nonlinear saturation in the semiconductor.
J. Taylor   +6 more
doaj   +1 more source

Ultrathin and Flexible Organic Light‐Addressable Potentiometric Sensors

open access: yesAdvanced Materials Technologies, EarlyView.
The first ultrathin, fully organic, and flexible light‐addressable potentiometric sensor (LAPS) is demonstrated. With a thickness of only 2.3–2.9 µm, this standalone film offers sensitivity to electrolyte potential and stable performance for over 170 days.
Ami Ichikawa   +6 more
wiley   +1 more source

InGaAs x-ray photodiode for spectroscopy

open access: yesMaterials Research Express, 2020
A prototype In _0.53 Ga _0.47 As p ^+ -i-n ^+ x-ray photodiode, fabricated from material grown by metalorganic vapour phase epitaxy, was investigated as a novel detector of x-rays.
M D C Whitaker   +3 more
doaj   +1 more source

Printed SWCNT‐Based p–n Junction Thin‐Film Near‐Infrared Photoresistors Enabled by a Sustainable Furan‐Derived π‐Conjugated Polymer

open access: yesAdvanced Materials Technologies, EarlyView.
A sustainable polymer–carbon nanotube bilayer enables efficient near‐infrared photodetection in a simple lateral planar p–n junction thin‐film architecture. Thermal side‐chain cleavage enhances interfacial coupling, shifts the dominant photoresponse from 800 to 1000 nm, and substantially improves device performance.
Jenner H. L. Ngai   +3 more
wiley   +1 more source

Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity [PDF]

open access: yesЖурнал нано- та електронної фізики, 2015
In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity), the construction ...
V.N. Murashev   +9 more
doaj  

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

open access: yesAdvanced Materials Technologies, EarlyView.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob   +4 more
wiley   +1 more source

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