Results 161 to 170 of about 46,362 (283)
Advanced Electronic Materials, EarlyView.A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta +9 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.This study introduces a new method for fabricating MIIM diodes using ultra‐precise dispensing printing techniques combined with ALD. Thus, it provides a practical alternative to traditional lithography. The fabricated diode, with a contact area of 5.4 µm × 4.0 µm exhibits a tunneling current in the microampere range, a zero‐bias responsivity of −1.31 A/
Aboubacar Savadogo +8 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley +1 more source
High‐Speed Flexible Schottky Diodes Based on Carbon Nanotubes
Advanced Electronic Materials, EarlyView.We demonstrate a flexible Schottky diode based on carbon nanotube network thin film, and the devices are fabricated via a low‐temperature process on a PI substrate, which exhibits excellent radio‐frequency characteristics, with a high responsivity 6 A/W at zero bias, a high intrinsic cut‐off frequency reaching 153 GHz, and an extrinsic cut‐off ...
Yan Li +6 more
wiley +1 more source
Radio-Frequency Characteristics of Stacked Metal-Insulator-Metal Capacitors in Radio-Frequency CMOS Devices. [PDF]
Micromachines (Basel)Choi TM, Lee HR, Pyo SG.
europepmc +1 more source
Parasitic Capacitances on Scaling Lateral Nanowire
, 2019 Kumar, Das, Uttam +1 more
openaire +3 more sources
Interface‐Engineered TiO2 Interlayer for Reliable Hafnia‐Based MFMIS FeFETs
Advanced Electronic Materials, EarlyView.An ultrathin TiO2 interlayer suppresses oxygen‐vacancy formation in HZO‐based MFMIS FeFETs, enabling enlarged memory windows and reduced leakage current with improved switching characteristics. ABSTRACT We investigated a TiO2‐engineered interfacial strategy to enhance the stability and reliability of hafnia‐based ferroelectric field‐effect transistors (
Changhyeon Han +4 more
wiley +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
An Improved Nonlinear Capacitance Model for GaN HEMTs Based on the Angelov Model. [PDF]
Micromachines (Basel)Miao Y, Yuan Q, Wang C, Cheng J.
europepmc +1 more source
Aqueous Zinc‐Based Batteries: Active Materials, Device Design, and Future Perspectives
Advanced Energy Materials, EarlyView.This review conducts a comprehensive analysis of aqueous zinc‐based batteries (AZBs) based on their intrinsic mechanisms, including redox reactions, ion intercalation reactions, alloying reactions, electrochemical double‐layer reactions, and mixed mechanisms, systematically discussing recent advancements in each type of AZBs.
Yan Ran, Fang Dong, Shuhui Sun, Yong Lei
wiley +1 more source