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A Two‐Stage Characterization Pipeline and Open‐Source Framework for Reproducible Tactile Sensing

open access: yesAdvanced Intelligent Systems, EarlyView.
The same soft tactile sensor returns different numbers when embodied in different robots. This is an Embodiment Gap that no shared framework currently captures transparently. A two‐stage characterization pipeline, paired with a FAIR open‐source digital datasheet, decouples intrinsic sensor behavior from embodiment effects and condenses cross‐laboratory
Matteo Lo Preti   +6 more
wiley   +1 more source

2D and 3D Interdigital Capacitors and Bias Tees Technologies on MnM Interposer for mmWave Applications. [PDF]

open access: yesMicromachines (Basel)
Griep G   +5 more
europepmc   +1 more source

Hybrid LTCC-Polyimide Approach for High-Sensitivity Mechanical Sensing Applications. [PDF]

open access: yesSensors (Basel)
Tounsi F   +5 more
europepmc   +1 more source

Measurements and extractions of parasitic capacitances in ulsi layouts

open access: yesIEEE Transactions on Electron Devices, 2003
This paper deals with the extraction of parasitic capacitances of interconnects in submicron layouts. It is well known that, in integrated circuits, the signal delay due to interconnects is comparable to that of gates. This aspect becomes particularly important, for example, during the design of clock trees in high-speed applications.
BRAMBILLA, ANGELO MAURIZIO   +3 more
openaire   +2 more sources
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Research on temperature characteristic of parasitic capacitance in MEMS capacitive accelerometer

Sensors and Actuators A: Physical, 2019
Abstract In MEMS capacitive accelerometer, parasitic capacitance is a serious problem, and its change over temperature would deteriorate performance of MEMS accelerometer. Yet, the temperature characteristic of parasitic capacitance hasn’t got enough research. In this work, the parasitic capacitance and its effect on bias drift are quantificationally
Xianshan Dong, Junhua Zhu
exaly   +2 more sources

Parasitic capacitance of submicrometer MOSFET's

IEEE Transactions on Electron Devices, 1999
We systematically investigated the dependence of parasitic capacitance on gate length, gate electrode thickness, and gate oxide thickness using a 2-D device simulator. We showed that the model commonly used for parasitic capacitance is not accurate and also showed that more the rigorous model proposed by Kamchouchi should be used for submicrometer ...
exaly   +2 more sources

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